JP6764771B2 - 基板処理装置及び遮熱板 - Google Patents
基板処理装置及び遮熱板 Download PDFInfo
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- 238000005192 partition Methods 0.000 claims description 65
- 238000000034 method Methods 0.000 claims description 46
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 239000012466 permeate Substances 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- -1 yttrium compound Chemical class 0.000 claims description 3
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000005040 ion trap Methods 0.000 description 8
- 229910017855 NH 4 F Inorganic materials 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 238000003486 chemical etching Methods 0.000 description 5
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- 238000009616 inductively coupled plasma Methods 0.000 description 4
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- 125000006850 spacer group Chemical group 0.000 description 3
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- 230000015572 biosynthetic process Effects 0.000 description 2
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- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
13 プロセスモジュール
28 処理容器
37 仕切板
48 遮熱板
49 スリット
52 ガス噴出口
Claims (11)
- 基板を収容する処理容器と、該処理容器内に発生するプラズマ及び前記基板の間に配置される仕切部材とを備え、前記仕切部材は前記プラズマ中のラジカルを選択的に前記基板へ向けて透過させる基板処理装置において、
前記仕切部材及び前記基板の間に配置される遮熱板を備え、
前記仕切部材は少なくとも2つの板状部材を有し、
前記遮熱板は前記基板と対向するように配置され、
前記遮熱板は金属からなり、前記処理容器へ接続されて前記処理容器の一部を構成し、前記仕切部材から輻射される熱を前記処理容器へ伝達することを特徴とする基板処理装置。 - 前記遮熱板及び前記処理容器はいずれもアルミニウム又はアルミニウム合金からなることを特徴とする請求項1記載の基板処理装置。
- 前記遮熱板は前記基板へ向けて処理ガスを噴出する複数の噴出口を有することを特徴とする請求項1又は2に記載の基板処理装置。
- 前記遮熱板は厚さ方向に貫通するラジカル通路を有し、該ラジカル通路の断面形状は前記基板へ向けて拡径することを特徴とする請求項1乃至3のいずれか1項に記載の基板処理装置。
- 前記遮熱板は誘電体で覆われることを特徴とする請求項1乃至4のいずれか1項に記載の基板処理装置。
- 前記誘電体はイットリウム化合物又はシリコンからなることを特徴とする請求項5記載の基板処理装置。
- 基板を収容する処理容器と、該処理容器内に発生するプラズマ及び前記基板の間に配置される仕切部材とを備え、前記仕切部材は前記プラズマ中のラジカルを選択的に前記基板へ向けて透過させる基板処理装置において、
前記仕切部材及び前記基板の間に配置される遮熱板を備え、
前記仕切部材は少なくとも2つの板状部材を有し、
前記遮熱板は前記基板と対向するように配置され、
前記遮熱板はシリコンからなり、前記処理容器へ接続されて前記処理容器の一部を構成し、前記仕切部材から輻射される熱を前記処理容器へ伝達することを特徴とする基板処理装置。 - 前記仕切部材及び前記遮熱板の間には隙間が設けられることを特徴とする請求項1乃至7のいずれか1項に記載の基板処理装置。
- プラズマ及び基板の間に配置されて前記プラズマ中のラジカルを選択的に前記基板へ向けて透過させる仕切部材と、前記基板との間に配置される遮熱板であって、
前記遮熱板は前記基板と対向するように配置され、
前記仕切部材は少なくとも2つの板状部材を有し、
前記遮熱板は金属からなり、処理容器へ接続されて前記処理容器の一部を構成し、前記仕切部材から輻射される熱を前記処理容器へ伝達することを特徴とする遮熱板。 - プラズマ及び基板の間に配置されて前記プラズマ中のラジカルを選択的に前記基板へ向けて透過させる仕切部材と、前記基板との間に配置される遮熱板であって、
前記遮熱板は前記基板と対向するように配置され、
前記仕切部材は少なくとも2つの板状部材を有し、
前記遮熱板はシリコンからなり、処理容器へ接続されて前記処理容器の一部を構成し、前記仕切部材から輻射される熱を前記処理容器へ伝達することを特徴とする遮熱板。 - 前記仕切部材と前記遮熱板の間に隙間が設けられることを特徴とする請求項9又は10に記載の遮熱板。
Priority Applications (5)
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JP2016230544A JP6764771B2 (ja) | 2016-11-28 | 2016-11-28 | 基板処理装置及び遮熱板 |
KR1020170152095A KR102032617B1 (ko) | 2016-11-28 | 2017-11-15 | 기판 처리 장치 및 차열판 |
TW106140878A TWI749109B (zh) | 2016-11-28 | 2017-11-24 | 基板處理裝置及隔熱板 |
US15/822,658 US20180151380A1 (en) | 2016-11-28 | 2017-11-27 | Substrate processing apparatus and heat shield plate |
CN201711216223.1A CN108122727B (zh) | 2016-11-28 | 2017-11-28 | 基板处理装置和隔热板 |
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US20220336194A1 (en) * | 2019-09-17 | 2022-10-20 | Tokyo Electron Limited | Plasma processing apparatus |
KR20210047808A (ko) * | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
KR102501331B1 (ko) * | 2020-09-08 | 2023-02-17 | 세메스 주식회사 | 플라즈마를 이용한 기판 처리 장치 및 방법 |
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JP2009016453A (ja) * | 2007-07-02 | 2009-01-22 | Tokyo Electron Ltd | プラズマ処理装置 |
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- 2016-11-28 JP JP2016230544A patent/JP6764771B2/ja active Active
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2017
- 2017-11-15 KR KR1020170152095A patent/KR102032617B1/ko active IP Right Grant
- 2017-11-24 TW TW106140878A patent/TWI749109B/zh active
- 2017-11-27 US US15/822,658 patent/US20180151380A1/en not_active Abandoned
- 2017-11-28 CN CN201711216223.1A patent/CN108122727B/zh active Active
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TWI749109B (zh) | 2021-12-11 |
JP2018088465A (ja) | 2018-06-07 |
CN108122727A (zh) | 2018-06-05 |
CN108122727B (zh) | 2019-12-24 |
US20180151380A1 (en) | 2018-05-31 |
KR20180060987A (ko) | 2018-06-07 |
KR102032617B1 (ko) | 2019-10-15 |
TW201833982A (zh) | 2018-09-16 |
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