JPWO2008126473A1 - 圧電薄膜フィルタ - Google Patents
圧電薄膜フィルタ Download PDFInfo
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- JPWO2008126473A1 JPWO2008126473A1 JP2009508952A JP2009508952A JPWO2008126473A1 JP WO2008126473 A1 JPWO2008126473 A1 JP WO2008126473A1 JP 2009508952 A JP2009508952 A JP 2009508952A JP 2009508952 A JP2009508952 A JP 2009508952A JP WO2008126473 A1 JPWO2008126473 A1 JP WO2008126473A1
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- 239000010409 thin film Substances 0.000 title claims abstract description 63
- 239000010408 film Substances 0.000 claims abstract description 80
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000003780 insertion Methods 0.000 abstract description 20
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- 238000010586 diagram Methods 0.000 description 21
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- 238000000034 method Methods 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- 230000001788 irregular Effects 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 235000019687 Lamb Nutrition 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
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- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- -1 LiTaO 3 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 230000000737 periodic effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/0023—Balance-unbalance or balance-balance networks
- H03H9/0095—Balance-unbalance or balance-balance networks using bulk acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/0211—Means for compensation or elimination of undesirable effects of reflections
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/566—Electric coupling means therefor
- H03H9/568—Electric coupling means therefor consisting of a ladder configuration
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
12 基板
12a 上面(一方主面)
12k,12s,12t 空洞
13 空隙
14 支持膜
15,15s,15t 下部電極
16 圧電薄膜
17,17s,17t 上部電極
18,19 周波数調整膜(段差形成膜)
18a,19a 周縁部
18k,18s,19s 段差部
20,20s,20p 振動部
22 付加膜
30 低音響インピーダンス層
32 低音響インピーダンス層
S1〜S4 直列共振子
P1〜P3 並列共振子
Z=1/(2×π×fs×C0) ・・・(1)
Claims (7)
- 1つの基板と、
前記基板の一方主面に沿って一対の電極の間に圧電薄膜が配置されかつ前記基板から音響的に分離されている第1及び第2の振動部と、
を備え、
前記第1の振動部を含む第1の共振子と前記第2の振動部を含む第2の共振子とによりフィルタが構成されている、圧電薄膜フィルタにおいて、
前記第1の共振子は、厚み方向から見たときに、前記第1の振動部の外周の全長の半分以上を形成する一方の前記電極に接して外側に配置されている付加膜を含み、
前記第2の共振子は、厚み方向から見たときに、前記第2の振動部の外形が多角形であり、該多角形の各辺が他のいずれの辺とも非平行であることを特徴とする、圧電薄膜フィルタ。 - 1つの基板と、
前記基板の一方主面に沿って一対の電極の間に圧電薄膜が配置されかつ前記基板から音響的に分離されている第1及び第2の振動部と、
を備え、
前記第1の振動部を含む第1の共振子と前記第2の振動部を含む第2の共振子とによりフィルタが構成されている、圧電薄膜フィルタにおいて、
前記第1の共振子は、厚み方向から見たときに、前記第1の振動部の外周の全長の半分以上を形成する一方の前記電極に接して外側に配置されている付加膜を含み、
前記第2の共振子は、厚み方向から見たときに、前記第2の振動部の外形が略多角形であり、該略多角形の各辺が湾曲又は折れ曲がりを繰り返す波状であることを特徴とする、圧電薄膜フィルタ。 - 前記第1の共振子は、特性インピーダンスが相対的に小さく、
前記第2の共振子は、特性インピーダンスが相対的に大きいことを特徴とする、請求項1又は2に記載の圧電薄膜フィルタ。 - 前記第1の共振子は、特性インピーダンスが相対的に小さく、
前記第2の共振子は、特性インピーダンスが相対的に大きく、
前記第2の共振子の少なくとも1つが、直列接続された複数の前記第1の共振子に置き換えられていることを特徴とする、請求項1又は2に記載の圧電薄膜フィルタ。 - 前記第1の共振子は、共振周波数が相対的に低く、
前記第2の共振子は、共振周波数が相対的に高いことを特徴とする、請求項1又は2に記載の圧電薄膜フィルタ。 - 厚み方向から見たとき、前記第1の振動部及び前記第2の振動部の少なくとも一方に重なり、当該振動部の外縁の少なくとも一部分に沿って段差部が形成され、該段差部と当該振動部の前記外縁と間の厚さが他の部分の厚さよりも小さい段差形成膜をさらに備えたことを特徴とする、請求項1乃至5のいずれか一つに記載の圧電薄膜フィルタ。
- 厚み方向から見たとき、フィルタを構成する共振子のうち特性インピーダンスが相対的に高い共振子の前記振動部のみに重なり、前記振動部の外縁の少なくとも一部分に沿って段差部が形成され、該段差部と前記振動部の前記外縁と間の厚さが他の部分の厚さよりも小さい段差形成膜をさらに備えたことを特徴とする、請求項1乃至5のいずれか一つに記載の圧電薄膜フィルタ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009508952A JP5013227B2 (ja) | 2007-04-11 | 2008-02-19 | 圧電薄膜フィルタ |
Applications Claiming Priority (4)
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JP2007103531 | 2007-04-11 | ||
JP2007103531 | 2007-04-11 | ||
PCT/JP2008/052770 WO2008126473A1 (ja) | 2007-04-11 | 2008-02-19 | 圧電薄膜フィルタ |
JP2009508952A JP5013227B2 (ja) | 2007-04-11 | 2008-02-19 | 圧電薄膜フィルタ |
Publications (2)
Publication Number | Publication Date |
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JPWO2008126473A1 true JPWO2008126473A1 (ja) | 2010-07-22 |
JP5013227B2 JP5013227B2 (ja) | 2012-08-29 |
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Country Status (3)
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US (1) | US8610516B2 (ja) |
JP (1) | JP5013227B2 (ja) |
WO (1) | WO2008126473A1 (ja) |
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US20100013573A1 (en) | 2010-01-21 |
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