JP5018788B2 - 圧電共振子及び圧電フィルタ - Google Patents
圧電共振子及び圧電フィルタ Download PDFInfo
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- JP5018788B2 JP5018788B2 JP2008554962A JP2008554962A JP5018788B2 JP 5018788 B2 JP5018788 B2 JP 5018788B2 JP 2008554962 A JP2008554962 A JP 2008554962A JP 2008554962 A JP2008554962 A JP 2008554962A JP 5018788 B2 JP5018788 B2 JP 5018788B2
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- 239000010408 film Substances 0.000 claims description 155
- 230000017525 heat dissipation Effects 0.000 claims description 65
- 239000010409 thin film Substances 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 34
- 230000005855 radiation Effects 0.000 claims description 14
- 230000020169 heat generation Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000006866 deterioration Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 235000019687 Lamb Nutrition 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/566—Electric coupling means therefor
- H03H9/568—Electric coupling means therefor consisting of a ladder configuration
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
10k 圧電フィルタ
12,12x,12y,12z 基板
13 空隙
14,14k 支持膜
16,16s,16t,16x,16y,16z 下部電極(電極)
17,17k,17x,17y,17z 圧電膜(圧電薄膜)
18,18s,18t,18x,18y,18z 上部電極(電極)
20 放熱膜
21 開口
22 段差形成膜
24,24s,24t 振動部
50,50a DPX
Q=λ・W・t・(TA−TB)/L ・・・(1)
ここで、λ:熱伝導率
W:伝熱経路断面の幅
t:伝熱経路断面の厚さ
TA:A面の温度
TB:B面の温度
L:伝熱経路の距離
1/R=λ・W・t/L ・・・(2)
Claims (7)
- 基板と、
前記基板に支持される第1の薄膜部と前記基板から音響的に分離されている第2の薄膜部とを含み、前記第2の薄膜部は圧電薄膜の両主面にそれぞれ第1及び第2の電極が配置され、膜厚方向に透視したときに前記第2の薄膜部において前記第1及び第2の電極が重なり合っている部分に振動部が形成された、薄膜部と、
を備えた圧電共振子であって、
前記薄膜部は、膜厚方向に透視したときに前記振動部の外周よりも内側に開口が形成され、前記振動部の前記外周の一部を形成する前記第1又は第2の電極の少なくとも一方の周縁に重なり、前記開口から前記第1の薄膜部まで延在する放熱膜を有し、
前記放熱膜は、膜厚方向に透視したときに前記振動部の前記外周よりも内側に配置される周縁の近傍部分において、該周縁から離れるほど厚みが大きくなることを特徴とする、圧電共振子。 - 前記薄膜部は、膜厚方向に透視したときに、前記振動部の前記外周から間隔を設けて内側に段差部を備えた段差形成膜をさらに有することを特徴とする、請求項1に記載の圧電共振子。
- 前記振動部を形成する前記第1の電極の膜厚と、前記振動部を形成する前記第2の電極の膜厚とが異なることを特徴とする、請求項1又は2に記載の圧電共振子。
- 前記振動部を形成する前記第1の電極の膜厚が相対的に小さく、前記振動部を形成する前記第2の電極の膜厚が相対的に大きいことを特徴とする、請求項3に記載の圧電共振子。
- 同一の前記基板に複数の前記振動部が形成された請求項1〜4のいずれか一つに記載の圧電共振子を備え、複数の前記振動部を形成する前記第1及び第2の電極が電気的に接続されてフィルタ回路が構成されていることを特徴とする、圧電フィルタ。
- 複数の前記振動部は、膜厚方向に透視したときの形状が、正方形、又は長短辺の比率が2以下の長方形であることを特徴とする、請求項5に記載の圧電フィルタ。
- 複数の前記振動部は、膜厚方向に透視したときの形状が、正方形、又は長短辺の比率が黄金比の長方形であることを特徴とする、請求項5に記載の圧電フィルタ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008554962A JP5018788B2 (ja) | 2007-01-24 | 2007-10-23 | 圧電共振子及び圧電フィルタ |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007013846 | 2007-01-24 | ||
JP2007013846 | 2007-01-24 | ||
PCT/JP2007/070662 WO2008090651A1 (ja) | 2007-01-24 | 2007-10-23 | 圧電共振子及び圧電フィルタ |
JP2008554962A JP5018788B2 (ja) | 2007-01-24 | 2007-10-23 | 圧電共振子及び圧電フィルタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2008090651A1 JPWO2008090651A1 (ja) | 2010-05-13 |
JP5018788B2 true JP5018788B2 (ja) | 2012-09-05 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2008554962A Active JP5018788B2 (ja) | 2007-01-24 | 2007-10-23 | 圧電共振子及び圧電フィルタ |
Country Status (4)
Country | Link |
---|---|
US (1) | US7924120B2 (ja) |
JP (1) | JP5018788B2 (ja) |
DE (1) | DE112007002969B4 (ja) |
WO (1) | WO2008090651A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020098488A1 (zh) * | 2018-11-14 | 2020-05-22 | 天津大学 | 散热结构、带散热结构的体声波谐振器、滤波器和电子设备 |
US11303262B2 (en) | 2019-06-14 | 2022-04-12 | Samsung Electro-Mechanics Co., Ltd. | Bulk-acoustic wave resonator |
Families Citing this family (18)
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US8854156B2 (en) * | 2009-02-20 | 2014-10-07 | Ube Industries, Ltd. | Thin-film piezoelectric resonator and thin-film piezoelectric filter using the same |
US8291559B2 (en) * | 2009-02-24 | 2012-10-23 | Epcos Ag | Process for adapting resonance frequency of a BAW resonator |
US8283999B2 (en) * | 2010-02-23 | 2012-10-09 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator structures comprising a single material acoustic coupling layer comprising inhomogeneous acoustic property |
US8830012B2 (en) * | 2010-09-07 | 2014-09-09 | Wei Pang | Composite bulk acoustic wave resonator |
US9911836B2 (en) | 2011-02-25 | 2018-03-06 | Qorvo Us, Inc. | Vertical ballast technology for power HBT device |
US9897512B2 (en) * | 2011-04-15 | 2018-02-20 | Qorvo Us, Inc. | Laminate variables measured electrically |
JP5394451B2 (ja) * | 2011-07-26 | 2014-01-22 | 株式会社アドバンテスト | アクチュエータの製造方法、スイッチ装置、伝送路切替装置、および試験装置 |
KR101959204B1 (ko) * | 2013-01-09 | 2019-07-04 | 삼성전자주식회사 | 무선 주파수 필터 및 무선 주파수 필터의 제조방법 |
JP6252279B2 (ja) * | 2013-03-29 | 2017-12-27 | セイコーエプソン株式会社 | 超音波トランスデューサー装置およびプローブ並びに電子機器および超音波画像装置 |
DE102014117238B4 (de) * | 2014-11-25 | 2017-11-02 | Snaptrack, Inc. | BAW-Resonator mit verringerter Eigenerwärmung, HF-Filter mit BAW-Resonator, Duplexer mit HF-Filter und Verfahren zur Herstellung |
JP2017063080A (ja) * | 2015-09-24 | 2017-03-30 | ミツミ電機株式会社 | 圧電素子及びその製造方法、圧電アクチュエータ |
DE102015120341A1 (de) | 2015-11-24 | 2017-05-24 | Snaptrack, Inc. | Bauelement mit Wärmeableitung |
US10778180B2 (en) * | 2015-12-10 | 2020-09-15 | Qorvo Us, Inc. | Bulk acoustic wave resonator with a modified outside stack portion |
US10396755B2 (en) * | 2016-02-17 | 2019-08-27 | Samsung Electro-Mechanics Co., Ltd. | Resonator having frame and method of manufacturing the same |
JP6668201B2 (ja) * | 2016-08-31 | 2020-03-18 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびマルチプレクサ。 |
DE102017129160B3 (de) * | 2017-12-07 | 2019-01-31 | RF360 Europe GmbH | Elektroakustisches Resonatorbauelement und Verfahren zu dessen Herstellung |
CN111342797A (zh) * | 2018-12-18 | 2020-06-26 | 天津大学 | 压电滤波器及具有其的电子设备 |
CN111342792B (zh) * | 2020-02-19 | 2021-05-25 | 见闻录(浙江)半导体有限公司 | 一种具有电磁屏蔽结构的固态装配谐振器及制作工艺 |
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2007
- 2007-10-23 DE DE112007002969.2T patent/DE112007002969B4/de active Active
- 2007-10-23 WO PCT/JP2007/070662 patent/WO2008090651A1/ja active Application Filing
- 2007-10-23 JP JP2008554962A patent/JP5018788B2/ja active Active
-
2009
- 2009-07-01 US US12/495,889 patent/US7924120B2/en active Active
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US11303262B2 (en) | 2019-06-14 | 2022-04-12 | Samsung Electro-Mechanics Co., Ltd. | Bulk-acoustic wave resonator |
Also Published As
Publication number | Publication date |
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DE112007002969B4 (de) | 2017-12-21 |
DE112007002969T5 (de) | 2009-09-24 |
WO2008090651A1 (ja) | 2008-07-31 |
US7924120B2 (en) | 2011-04-12 |
JPWO2008090651A1 (ja) | 2010-05-13 |
US20090261922A1 (en) | 2009-10-22 |
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