JPS649895A - Method for growing iii-v compound semiconductor crystal on si substrate - Google Patents

Method for growing iii-v compound semiconductor crystal on si substrate

Info

Publication number: JPS649895A
Authority: JP; Japan
Prior art keywords: substrate; compound semiconductor; species containing; semiconductor crystal; gas species
Prior art date: 1987-07-01
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP16569487A

Other languages

English (en)

Inventor

Taku Matsumoto

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NEC Corp

Original Assignee

NEC Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-07-01

Filing date

1987-07-01

Publication date

1989-01-13

1987-07-01 Application filed by NEC Corp filed Critical NEC Corp

1987-07-01 Priority to JP16569487A priority Critical patent/JPS649895A/ja

1988-06-30 Priority to EP88305944A priority patent/EP0297867B1/en

1988-06-30 Priority to US07/213,940 priority patent/US4840921A/en

1988-06-30 Priority to DE88305944T priority patent/DE3884682T2/de

1989-01-13 Publication of JPS649895A publication Critical patent/JPS649895A/ja

Status Pending legal-status Critical Current

Links

Landscapes

Crystals, And After-Treatments Of Crystals (AREA)

JP16569487A 1987-07-01 1987-07-01 Method for growing iii-v compound semiconductor crystal on si substrate Pending JPS649895A (en)

Priority Applications (4)

Application Number	Priority Date	Filing Date	Title
JP16569487A JPS649895A (en)	1987-07-01	1987-07-01	Method for growing iii-v compound semiconductor crystal on si substrate
EP88305944A EP0297867B1 (en)	1987-07-01	1988-06-30	A process for the growth of iii-v group compound semiconductor crystal on a si substrate
US07/213,940 US4840921A (en)	1987-07-01	1988-06-30	Process for the growth of III-V group compound semiconductor crystal on a Si substrate
DE88305944T DE3884682T2 (de)	1987-07-01	1988-06-30	Verfahren zur Züchtung eines Halbleiterkristalles aus III-V-Gruppen-Verbindung auf einem Si-Substrat.

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP16569487A JPS649895A (en)	1987-07-01	1987-07-01	Method for growing iii-v compound semiconductor crystal on si substrate

Publications (1)

Publication Number	Publication Date
JPS649895A true JPS649895A (en)	1989-01-13

Family

ID=15817270

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP16569487A Pending JPS649895A (en)	1987-07-01	1987-07-01	Method for growing iii-v compound semiconductor crystal on si substrate

Country Status (1)

Country	Link
JP (1)	JPS649895A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5184539A (en) *	1991-12-02	1993-02-09	Meito Corporation	Fryer

1987
- 1987-07-01 JP JP16569487A patent/JPS649895A/ja active Pending

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5184539A (en) *	1991-12-02	1993-02-09	Meito Corporation	Fryer

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