JPS6418997A - Growth of inp crystal on si substrate - Google Patents

Growth of inp crystal on si substrate

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Publication number
JPS6418997A
JPS6418997A JP17510587A JP17510587A JPS6418997A JP S6418997 A JPS6418997 A JP S6418997A JP 17510587 A JP17510587 A JP 17510587A JP 17510587 A JP17510587 A JP 17510587A JP S6418997 A JPS6418997 A JP S6418997A
Authority
JP
Japan
Prior art keywords
substrate
followed
growth
feeding
growth chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17510587A
Other languages
Japanese (ja)
Other versions
JP2576134B2 (en
Inventor
Taku Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP17510587A priority Critical patent/JP2576134B2/en
Priority to EP88305944A priority patent/EP0297867B1/en
Priority to US07/213,940 priority patent/US4840921A/en
Priority to DE88305944T priority patent/DE3884682T2/en
Publication of JPS6418997A publication Critical patent/JPS6418997A/en
Application granted granted Critical
Publication of JP2576134B2 publication Critical patent/JP2576134B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain a InP epitaxial layer of good crystallinity on a Si substrate, by feeding the clean surface of the substrate with a In chloride followed by phosphine. CONSTITUTION:A Si substrate 14 is set in the upper tier growth chamber 13, being heat-treated at ca. 1,000 deg.C either in a hydrogen gas atmosphere free from group-V matter or in a vacuum to remove the oxides on the surface of said substrate followed by cooling to 350-600 deg.C. Thence, this substrate is transferred to the lower tier growth chamber 11 followed by feeding HCl and In from source boat 12 to make InCl adsorb on the substrate 14. This substrate 14 is then transferred to the upper tier growth chamber 13 again followed by feeding phosphine to grow InP crystal, thus effecting growth of a InP epitaxial layer by repeating this process.
JP17510587A 1987-07-01 1987-07-13 Method for growing InP crystal on Si substrate Expired - Lifetime JP2576134B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP17510587A JP2576134B2 (en) 1987-07-13 1987-07-13 Method for growing InP crystal on Si substrate
EP88305944A EP0297867B1 (en) 1987-07-01 1988-06-30 A process for the growth of iii-v group compound semiconductor crystal on a si substrate
US07/213,940 US4840921A (en) 1987-07-01 1988-06-30 Process for the growth of III-V group compound semiconductor crystal on a Si substrate
DE88305944T DE3884682T2 (en) 1987-07-01 1988-06-30 Process for growing a III-V group compound semiconductor crystal on a Si substrate.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17510587A JP2576134B2 (en) 1987-07-13 1987-07-13 Method for growing InP crystal on Si substrate

Publications (2)

Publication Number Publication Date
JPS6418997A true JPS6418997A (en) 1989-01-23
JP2576134B2 JP2576134B2 (en) 1997-01-29

Family

ID=15990346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17510587A Expired - Lifetime JP2576134B2 (en) 1987-07-01 1987-07-13 Method for growing InP crystal on Si substrate

Country Status (1)

Country Link
JP (1) JP2576134B2 (en)

Also Published As

Publication number Publication date
JP2576134B2 (en) 1997-01-29

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