JPS6418997A - Growth of inp crystal on si substrate - Google Patents
Growth of inp crystal on si substrateInfo
- Publication number
- JPS6418997A JPS6418997A JP17510587A JP17510587A JPS6418997A JP S6418997 A JPS6418997 A JP S6418997A JP 17510587 A JP17510587 A JP 17510587A JP 17510587 A JP17510587 A JP 17510587A JP S6418997 A JPS6418997 A JP S6418997A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- followed
- growth
- feeding
- growth chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To obtain a InP epitaxial layer of good crystallinity on a Si substrate, by feeding the clean surface of the substrate with a In chloride followed by phosphine. CONSTITUTION:A Si substrate 14 is set in the upper tier growth chamber 13, being heat-treated at ca. 1,000 deg.C either in a hydrogen gas atmosphere free from group-V matter or in a vacuum to remove the oxides on the surface of said substrate followed by cooling to 350-600 deg.C. Thence, this substrate is transferred to the lower tier growth chamber 11 followed by feeding HCl and In from source boat 12 to make InCl adsorb on the substrate 14. This substrate 14 is then transferred to the upper tier growth chamber 13 again followed by feeding phosphine to grow InP crystal, thus effecting growth of a InP epitaxial layer by repeating this process.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17510587A JP2576134B2 (en) | 1987-07-13 | 1987-07-13 | Method for growing InP crystal on Si substrate |
EP88305944A EP0297867B1 (en) | 1987-07-01 | 1988-06-30 | A process for the growth of iii-v group compound semiconductor crystal on a si substrate |
US07/213,940 US4840921A (en) | 1987-07-01 | 1988-06-30 | Process for the growth of III-V group compound semiconductor crystal on a Si substrate |
DE88305944T DE3884682T2 (en) | 1987-07-01 | 1988-06-30 | Process for growing a III-V group compound semiconductor crystal on a Si substrate. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17510587A JP2576134B2 (en) | 1987-07-13 | 1987-07-13 | Method for growing InP crystal on Si substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6418997A true JPS6418997A (en) | 1989-01-23 |
JP2576134B2 JP2576134B2 (en) | 1997-01-29 |
Family
ID=15990346
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17510587A Expired - Lifetime JP2576134B2 (en) | 1987-07-01 | 1987-07-13 | Method for growing InP crystal on Si substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2576134B2 (en) |
-
1987
- 1987-07-13 JP JP17510587A patent/JP2576134B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2576134B2 (en) | 1997-01-29 |
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