JPS649896A - Method for growing iii-v compound semiconductor crystal on si substrate - Google Patents
Method for growing iii-v compound semiconductor crystal on si substrateInfo
- Publication number
- JPS649896A JPS649896A JP16569587A JP16569587A JPS649896A JP S649896 A JPS649896 A JP S649896A JP 16569587 A JP16569587 A JP 16569587A JP 16569587 A JP16569587 A JP 16569587A JP S649896 A JPS649896 A JP S649896A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- compound semiconductor
- species containing
- semiconductor crystal
- gas species
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To grow the titled superconductor crystal, having good crystallinity and capable of selective growth on a substrate, by alternately feeding a gas species containing Ga chloride and a gas species containing group V constituent element onto a silicon substrate having a formed mask pattern. CONSTITUTION:A Ga source boat 12 is placed on the upstream side of a growth chamber 11 in the lower stage and a carrier gas and HCl gas are fed from the upstream side thereof to adsorb the formed Ga chloride on a silicon substrate 14 having a formed mask pattern. The substrate 14 is then moved to a growth chamber 13 in the upper stage and a gas species containing a group V constituent element is fed and adsorbed on the substrate 14. The above- mentioned operations are alternately repeated to carry out atomic layer epitaxial growth of a III-V compound semiconductor crystal on the substrate 14.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16569587A JPS649896A (en) | 1987-07-01 | 1987-07-01 | Method for growing iii-v compound semiconductor crystal on si substrate |
EP88305944A EP0297867B1 (en) | 1987-07-01 | 1988-06-30 | A process for the growth of iii-v group compound semiconductor crystal on a si substrate |
US07/213,940 US4840921A (en) | 1987-07-01 | 1988-06-30 | Process for the growth of III-V group compound semiconductor crystal on a Si substrate |
DE88305944T DE3884682T2 (en) | 1987-07-01 | 1988-06-30 | Process for growing a III-V group compound semiconductor crystal on a Si substrate. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16569587A JPS649896A (en) | 1987-07-01 | 1987-07-01 | Method for growing iii-v compound semiconductor crystal on si substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS649896A true JPS649896A (en) | 1989-01-13 |
Family
ID=15817290
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16569587A Pending JPS649896A (en) | 1987-07-01 | 1987-07-01 | Method for growing iii-v compound semiconductor crystal on si substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS649896A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5212507A (en) * | 1990-01-29 | 1993-05-18 | Nidek Co., Ltd. | Apparatus for measuring cornea shape |
US20180178883A1 (en) * | 2016-12-26 | 2018-06-28 | Shimano Inc. | Bicycle drive unit and bicycle drive system including bicycle drive unit |
-
1987
- 1987-07-01 JP JP16569587A patent/JPS649896A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5212507A (en) * | 1990-01-29 | 1993-05-18 | Nidek Co., Ltd. | Apparatus for measuring cornea shape |
US20180178883A1 (en) * | 2016-12-26 | 2018-06-28 | Shimano Inc. | Bicycle drive unit and bicycle drive system including bicycle drive unit |
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