JPS64822B2 - - Google Patents

Info

Publication number
JPS64822B2
JPS64822B2 JP58115878A JP11587883A JPS64822B2 JP S64822 B2 JPS64822 B2 JP S64822B2 JP 58115878 A JP58115878 A JP 58115878A JP 11587883 A JP11587883 A JP 11587883A JP S64822 B2 JPS64822 B2 JP S64822B2
Authority
JP
Japan
Prior art keywords
area
peripheral circuit
cell array
pads
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58115878A
Other languages
English (en)
Other versions
JPS609152A (ja
Inventor
Yoshihiro Takemae
Tomio Nakano
Kimiaki Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58115878A priority Critical patent/JPS609152A/ja
Priority to US06/625,682 priority patent/US4660174A/en
Priority to DE8484304391T priority patent/DE3485625D1/de
Priority to EP84304391A priority patent/EP0130798B1/en
Priority to KR1019840003724A priority patent/KR910005597B1/ko
Publication of JPS609152A publication Critical patent/JPS609152A/ja
Publication of JPS64822B2 publication Critical patent/JPS64822B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/10807—Making laminated safety glass or glazing; Apparatus therefor
    • B32B17/10816—Making laminated safety glass or glazing; Apparatus therefor by pressing
    • B32B17/10825—Isostatic pressing, i.e. using non rigid pressure-exerting members against rigid parts
    • B32B17/10834—Isostatic pressing, i.e. using non rigid pressure-exerting members against rigid parts using a fluid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85417—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/85424—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Wire Bonding (AREA)
  • Semiconductor Memories (AREA)

Description

【発明の詳細な説明】 発明の技術分野 本発明は半導体装置、特に、そのレイアウトに
関する。
技術の背景 半導体装置として、たとえばダイナミツク
RAM、スタテイツクRAMのレイアウトとして
は、主に、セルアレイ領域、周辺回路領域、およ
びボンデイングパツド領域に分けられる。この場
合、セルアレイ領域には、ワード線もしくはビツ
ト線毎に規則的な繰返しパターンとして設けられ
た回路たとえばセルアレイ、デコーダ、センスア
ンプ等が配置される。他方、周辺回路領域には、
回路はワード線もしくはビツト線毎に設けられ
ず、言い換えると、不規則的パターンの回路が配
置される。このようなセルアレイ領域、周辺回路
領域、ボンデイングパツド領域等のレイアウトは
半導体装置の大容量化の点で重要なことである。
従来技術と問題点 従来の半導体装置を第１図に示す。第１図には
たとえば16ピンダイナミツクRAMを示してあ
る。第１図において、デコーダ、センスアンプ等
をも含むセルアレイ領域１の両側に周辺回路領域
２−１，２−２を設けてあり、さらにその外側に
ボンデイングパツドP1〜P16が設けられている。
ここで、パツドP16がVSS電源用であり、パツドP8
がVCC電源用である。なお、第１図の装置はDIP
（デユアルインラインパツケージ）に実装する場
合を想定している。
第１図においては、各周辺回路領域２−１，２
−２共もパツドP1〜P16から信号を受けなければ
ならない。従つて、周辺回路領域２−１に対して
は領域Ｘ，Ｙを介してパツドP5〜P12が接続され、
他方、周辺回路領域２−２に対しても領域Ｘ，Ｙ
を介してパツドP1〜P4，P13〜P16が接続されるこ
とになる。たとえば、領域Ｘ，Ｙにおける信号線
として、パツドP8およびP16の各電源線幅は、抵
抗を十分低くするために、100μm程度必要とす
る。また、その他の信号線幅も6μm程度必要と
し、その数はこの場合、20〜30である。従つて、
領域Ｘ，Ｙにおける総信号線幅は、 100×２＋６（20〜30） ＝300〜400μm となり、これはセルアレイ領域１の面積を制限す
る要因となり、大容量化の点で不利である。しか
も、第１図の装置をサーデイプ又はプラスチツク
型パツケージに実装すれば、第２図に示すよう
に、パツドとリードとの間を接続するワイヤＷを
短かくしてその容量を小さくすると、たとえば、
３番ピンのリード４−３と４番ピンのリード４−
４とが重なる部分Ｚが生じ、これも第１図の装置
の面積を制限するものであり、従つて、やはり、
大容量化の点で不利となる。
発明の目的 本発明の目的は、上述の従来形における問題点
に鑑み、セルアレイ領域を２分割し、その間に周
辺回路領域を設けることにより、周辺回路領域と
パツドとの間における信号線のトータル幅を減少
させ、つまり、第１図の領域Ｘ，Ｙの幅を低減し
て大容量化を達成することにある。
発明の構成 上述の目的を達成するために本発明によれば、
規則性的繰返しパターンからなる回路ブロツクを
２分割し、該２分割された回路ブロツクの間に不
規則的パターンを有する周辺回路を配置し、前記
２分割された回路ブロツクの外側にボンデイング
パツド領域を設けた半導体装置が提供される。
発明の実施例 以下、図面により本発明の実施例を説明する。
第３図は本発明に係る半導体装置の一実施例を
示すレイアウト図である。第３図においては、左
右に、セルアレイ領域１−１，１−２を設け、そ
の間に周辺回路領域２が設けられている。さら
に、各セルアレイ領域１−１，１−２の外側にボ
ンデイングパツドを設けてある。なお、パツド
P4，P5，P12，P13のみが中央部に設けられている
のはサーデイプまたはプラスチツクパツケージに
実装する場合を想定しているからであり、DIPに
実装する場合にはこれらのパツドもセルアレイ領
域１−１，１−２の外側に設けられる。
第３図においては、周辺回路領域２と電源用パ
ツドP8，P16との距離は第１図の場合に比べてほ
ぼ1/2となり、従つて、抵抗値を考慮すれば、周
辺回路２と電源用パツドP8，P16とを接続する電
源線の幅は1/2でよく、しかも、領域X′，Y′を通
過する電源線の本数も1/2となる。従つて、領域
X′，Y′における総信号線幅は、他の信号線を考
慮しても、第１図に場合に比べてほぼ1/4になる。
なお、セルアレイ領域１−１と１−２の両側の領
域X′，Y′はそれぞれ異なる本数の信号線が配線
されるため、セルアレイ領域のＹ軸方向の位置は
異なることがある。
第３図の装置をサーデイプ又はプラスチツク型
パツケージに実装すれば、第４図に示すように、
３番ピンのリード４−３と４番ピンのリード４−
４とが重複せず、従つて、パツケージに余裕が生
じ、延いては、第３図の装置の大容量化に役立つ
ものである。
発明の効果 以上説明したように本発明によれば、セルアレ
イ領域外の総信号線幅を減少させることができ、
従つて、装置の大容量化を達成できる。
【図面の簡単な説明】
第１図は従来の半導体装置のレイアウト図、第
２図は第１図の装置をサーデイプまたはプラスチ
ツクパツケージに実装した場合の部分レイアウト
図、第３図は本発明に係る半導体装置の一実施例
を示すレイアウト図、第４図は第３図の装置をサ
ーデイプまたはプラスチツクパツケージに実装し
た場合の部分レイアウト図である。 １−１，１−２：セルアレイ領域、２：周辺回
路領域、P1〜P16：ボンデイングパツド。

Claims (1)

    【特許請求の範囲】
  1. １ 規則的繰返しパターンからなる回路ブロツク
    を２分割し、該２分割された回路ブロツクの間に
    不規則的パターンを有する周辺回路を配置し、前
    記２分割された回路ブロツクの外側にボンデイン
    グパツド領域を設けた半導体装置。
JP58115878A 1983-06-29 1983-06-29 半導体装置 Granted JPS609152A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP58115878A JPS609152A (ja) 1983-06-29 1983-06-29 半導体装置
US06/625,682 US4660174A (en) 1983-06-29 1984-06-28 Semiconductor memory device having divided regular circuits
DE8484304391T DE3485625D1 (de) 1983-06-29 1984-06-28 Halbleiterspeicheranordnung.
EP84304391A EP0130798B1 (en) 1983-06-29 1984-06-28 Semiconductor memory device
KR1019840003724A KR910005597B1 (ko) 1983-06-29 1984-06-29 분할된 정류회로를 가진 반도체 기억장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58115878A JPS609152A (ja) 1983-06-29 1983-06-29 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP1324891A Division JPH077819B2 (ja) 1989-12-16 1989-12-16 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS609152A JPS609152A (ja) 1985-01-18
JPS64822B2 true JPS64822B2 (ja) 1989-01-09

Family

ID=14673401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58115878A Granted JPS609152A (ja) 1983-06-29 1983-06-29 半導体装置

Country Status (5)

Country Link
US (1) US4660174A (ja)
EP (1) EP0130798B1 (ja)
JP (1) JPS609152A (ja)
KR (1) KR910005597B1 (ja)
DE (1) DE3485625D1 (ja)

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JPH0652784B2 (ja) * 1984-12-07 1994-07-06 富士通株式会社 ゲートアレイ集積回路装置及びその製造方法
JPS61227289A (ja) * 1985-03-30 1986-10-09 Fujitsu Ltd 半導体記憶装置
EP0204177A1 (de) * 1985-05-31 1986-12-10 Siemens Aktiengesellschaft Anschlussanordnung für einen integrierten Halbleiterschaltkreis
JPS62122139A (ja) * 1985-11-21 1987-06-03 Nec Corp 半導体記憶装置
JP2659179B2 (ja) * 1985-12-20 1997-09-30 日本電気株式会社 半導体記憶装置
JPS62180594A (ja) * 1986-02-04 1987-08-07 Fujitsu Ltd 半導体記憶装置
JPS62192086A (ja) * 1986-02-18 1987-08-22 Matsushita Electronics Corp 半導体記憶装置
US5265045A (en) * 1986-10-31 1993-11-23 Hitachi, Ltd. Semiconductor integrated circuit device with built-in memory circuit group
JPS6379871U (ja) * 1986-11-14 1988-05-26
US5243208A (en) * 1987-05-27 1993-09-07 Hitachi, Ltd. Semiconductor integrated circuit device having a gate array with a ram and by-pass signal lines which interconnect a logic section and I/O unit circuit of the gate array
US5287000A (en) * 1987-10-20 1994-02-15 Hitachi, Ltd. Resin-encapsulated semiconductor memory device useful for single in-line packages
EP0317666B1 (en) * 1987-11-23 1992-02-19 Koninklijke Philips Electronics N.V. Fast operating static ram memory with high storage capacity
US5014242A (en) * 1987-12-10 1991-05-07 Hitachi, Ltd. Semiconductor device for a ram disposed on chip so as to minimize distances of signal paths between the logic circuits and memory circuit
JP2585738B2 (ja) * 1988-08-12 1997-02-26 株式会社日立製作所 半導体記憶装置
JPH081945B2 (ja) * 1988-10-24 1996-01-10 日本電気株式会社 半導体記憶装置
US5278802A (en) * 1988-10-28 1994-01-11 Texas Instruments Incorporated Decoding global drive/boot signals using local predecoders
JPH0772991B2 (ja) * 1988-12-06 1995-08-02 三菱電機株式会社 半導体記憶装置
US6069814A (en) * 1989-05-26 2000-05-30 Texas Instruments Incorporated Multiple input buffers for address bits
JP2542706B2 (ja) * 1989-10-05 1996-10-09 株式会社東芝 ダイナミックｒａｍ
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JP3242101B2 (ja) * 1990-10-05 2001-12-25 三菱電機株式会社 半導体集積回路
JPH05308136A (ja) * 1992-04-01 1993-11-19 Nec Corp マスタスライス集積回路
JP3073610B2 (ja) * 1992-09-22 2000-08-07 株式会社東芝 半導体記憶装置
US5517442A (en) * 1995-03-13 1996-05-14 International Business Machines Corporation Random access memory and an improved bus arrangement therefor
US5936877A (en) 1998-02-13 1999-08-10 Micron Technology, Inc. Die architecture accommodating high-speed semiconductor devices
DE19907922C1 (de) * 1999-02-24 2000-09-28 Siemens Ag Leseverstärkeranordnung mit gemeinsamen durchgehendem Diffusionsgebiet der Leseverstärker-Transistoren
KR100380409B1 (ko) * 2001-01-18 2003-04-11 삼성전자주식회사 반도체 메모리 소자의 패드배열구조 및 그의 구동방법

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Also Published As

Publication number Publication date
US4660174A (en) 1987-04-21
KR850000124A (ko) 1985-02-25
DE3485625D1 (de) 1992-05-07
EP0130798B1 (en) 1992-04-01
EP0130798A2 (en) 1985-01-09
JPS609152A (ja) 1985-01-18
KR910005597B1 (ko) 1991-07-31
EP0130798A3 (en) 1988-08-31

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