JPS6461391A - Reactor tube for vapor-phase growth - Google Patents

Reactor tube for vapor-phase growth

Info

Publication number
JPS6461391A
JPS6461391A JP21943787A JP21943787A JPS6461391A JP S6461391 A JPS6461391 A JP S6461391A JP 21943787 A JP21943787 A JP 21943787A JP 21943787 A JP21943787 A JP 21943787A JP S6461391 A JPS6461391 A JP S6461391A
Authority
JP
Japan
Prior art keywords
vapor
inlets
inlet
phase growth
reactor tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21943787A
Other languages
Japanese (ja)
Inventor
Isao Hino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP21943787A priority Critical patent/JPS6461391A/en
Publication of JPS6461391A publication Critical patent/JPS6461391A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain a multi-layered thin film of semiconductor crystals of high quality, by dividing the gas inlet into 2 or more inlets and making the relative location between the added inlets and the susceptor variable in the reaction tube for vapor-phase epitaxial growth to form semiconductor crystal thin films. CONSTITUTION:In the vapor-phase growth reaction tube 1 where the gas inlet 4 is set at one end, while the outlet, at the other, and the base supporter 2 can be inserted into the tube, one or more additional gas inlets (e.g., 5) other than the inlet 4 are provided and the relative location between the additional inlet 5 and the supporter 2 is made variable.
JP21943787A 1987-09-01 1987-09-01 Reactor tube for vapor-phase growth Pending JPS6461391A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21943787A JPS6461391A (en) 1987-09-01 1987-09-01 Reactor tube for vapor-phase growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21943787A JPS6461391A (en) 1987-09-01 1987-09-01 Reactor tube for vapor-phase growth

Publications (1)

Publication Number Publication Date
JPS6461391A true JPS6461391A (en) 1989-03-08

Family

ID=16735389

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21943787A Pending JPS6461391A (en) 1987-09-01 1987-09-01 Reactor tube for vapor-phase growth

Country Status (1)

Country Link
JP (1) JPS6461391A (en)

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