JPS5275176A - Method for vapor phase epitaxial growth - Google Patents
Method for vapor phase epitaxial growthInfo
- Publication number
- JPS5275176A JPS5275176A JP15149075A JP15149075A JPS5275176A JP S5275176 A JPS5275176 A JP S5275176A JP 15149075 A JP15149075 A JP 15149075A JP 15149075 A JP15149075 A JP 15149075A JP S5275176 A JPS5275176 A JP S5275176A
- Authority
- JP
- Japan
- Prior art keywords
- vapor phase
- epitaxial growth
- phase epitaxial
- substrate
- disposing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To grow a good-quality crystal at a temperature lower than before by disposing a single crystal Si substrate on a susceptor made of quartz, etc., and flowing a raw material gas at a predetermined rate while heating the substrate with infrared rays.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15149075A JPS5275176A (en) | 1975-12-18 | 1975-12-18 | Method for vapor phase epitaxial growth |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15149075A JPS5275176A (en) | 1975-12-18 | 1975-12-18 | Method for vapor phase epitaxial growth |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5275176A true JPS5275176A (en) | 1977-06-23 |
Family
ID=15519626
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15149075A Pending JPS5275176A (en) | 1975-12-18 | 1975-12-18 | Method for vapor phase epitaxial growth |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5275176A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5750423A (en) * | 1980-09-12 | 1982-03-24 | Nec Corp | Vapor phase growth device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3623712A (en) * | 1969-10-15 | 1971-11-30 | Applied Materials Tech | Epitaxial radiation heated reactor and process |
-
1975
- 1975-12-18 JP JP15149075A patent/JPS5275176A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3623712A (en) * | 1969-10-15 | 1971-11-30 | Applied Materials Tech | Epitaxial radiation heated reactor and process |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5750423A (en) * | 1980-09-12 | 1982-03-24 | Nec Corp | Vapor phase growth device |
JPS627685B2 (en) * | 1980-09-12 | 1987-02-18 | Nippon Electric Co |
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