JPS6430244A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6430244A
JPS6430244A JP18696587A JP18696587A JPS6430244A JP S6430244 A JPS6430244 A JP S6430244A JP 18696587 A JP18696587 A JP 18696587A JP 18696587 A JP18696587 A JP 18696587A JP S6430244 A JPS6430244 A JP S6430244A
Authority
JP
Japan
Prior art keywords
film
silicon nitride
nitride film
gap
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18696587A
Other languages
Japanese (ja)
Inventor
Tetsuro Yanai
Yasutaka Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP18696587A priority Critical patent/JPS6430244A/en
Publication of JPS6430244A publication Critical patent/JPS6430244A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To suppress penetration by a bird's beak and to render microstructural with facility an element isolating region by a method wherein a gap is provided in a pad oxide at the lower end of a silicon nitride film and the gap is filled with a polycrystalline silicon film. CONSTITUTION:A silicon nitride film 13 is formed on the entire surface of a pad oxide film 12, and the silicon nitride film 13 is then subjected to etching. A photoresist film and the silicon nitride film 13 patterned in said etching process serve as a mask in an ion implanting process, which results in a channel stop layer 14. A process follows wherein over-etching is accomplished for the providing of a gap 15 in the pad oxide film 12 at the lower end of the silicon nitride film 13, with the silicon nitride film 13 serving as an etching-resistant mask. On the entire surface of a semiconductor substrate 11, a polycrystalline silicon film 16 is deposited, filling up the gap 15. The polycrystalline silicon film 16 is then subjected to thermal oxidation for conversion into a silicon oxide film 17.
JP18696587A 1987-07-27 1987-07-27 Manufacture of semiconductor device Pending JPS6430244A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18696587A JPS6430244A (en) 1987-07-27 1987-07-27 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18696587A JPS6430244A (en) 1987-07-27 1987-07-27 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6430244A true JPS6430244A (en) 1989-02-01

Family

ID=16197826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18696587A Pending JPS6430244A (en) 1987-07-27 1987-07-27 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6430244A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5175123A (en) * 1990-11-13 1992-12-29 Motorola, Inc. High-pressure polysilicon encapsulated localized oxidation of silicon
JPH05182959A (en) * 1990-12-26 1993-07-23 Korea Electron Telecommun Method of isolating semiconductor element utilizing local polyoxide

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5175123A (en) * 1990-11-13 1992-12-29 Motorola, Inc. High-pressure polysilicon encapsulated localized oxidation of silicon
USRE35294E (en) * 1990-11-13 1996-07-09 Motorola, Inc. Polysilicon encapsulated localized oxidation of silicon
JPH05182959A (en) * 1990-12-26 1993-07-23 Korea Electron Telecommun Method of isolating semiconductor element utilizing local polyoxide

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