JPS6461928A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6461928A JPS6461928A JP21979987A JP21979987A JPS6461928A JP S6461928 A JPS6461928 A JP S6461928A JP 21979987 A JP21979987 A JP 21979987A JP 21979987 A JP21979987 A JP 21979987A JP S6461928 A JPS6461928 A JP S6461928A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sio2
- opening part
- mask
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To increase the threshold voltage level by forming an SiO2 film, which is a thin underlay, so that it fills in a groove formed on a silicon substrate, removing a nitride silicon film with a photoresist film having an opening part as a mask, and forming an oxide silicon film with the nitride silicon film which has remained below the photoresist film as a mask. CONSTITUTION:A silicon opening part 3 is formed with a photoresist film 2, wherein an opening part 2a is formed on a P-type substrate 1, as a mask. By removing the photoresist film 2 and then forming an SiO2 film 5, an Si3N4 film 4 is stacked thereupon. Then by forming a photoresist film 15, which is formed on an opening part 15a, on the surface of the Si3N4 film 4 and exposing a part of the surface of the SiO2 film 5 to the opening part 15a, a P-type impurity ion is implanted. When executing a thermal oxidation with the Si3N4 film 4 as a mask after removing the photoresist film 15, an SiO2 film 6 for individual element isolation is formed without elongating the bird's beak, and at the same time, a diffusion layer 7 is formed on a part of the substrate 1 below the SiO2 film 6. Then an SiO2 film 6, the Si3N4 film 4, and an SiO2 film 5a are removed by etching, and the substrate 1 is removed to the bottommost part of the opening 3a. According to the constitution, not only the threshold voltage level of field transistor can be increased but also the SiO2 film can be miniaturized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21979987A JPS6461928A (en) | 1987-09-02 | 1987-09-02 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21979987A JPS6461928A (en) | 1987-09-02 | 1987-09-02 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6461928A true JPS6461928A (en) | 1989-03-08 |
Family
ID=16741216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21979987A Pending JPS6461928A (en) | 1987-09-02 | 1987-09-02 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6461928A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5432118A (en) * | 1994-06-28 | 1995-07-11 | Motorola, Inc. | Process for forming field isolation |
| KR100274349B1 (en) * | 1997-12-30 | 2000-12-15 | 김영환 | Method of forming a field oxide firm in a semiconductor device |
| KR100414230B1 (en) * | 1996-12-24 | 2004-03-26 | 주식회사 하이닉스반도체 | Method for forming isolation layer of semiconductor device |
-
1987
- 1987-09-02 JP JP21979987A patent/JPS6461928A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5432118A (en) * | 1994-06-28 | 1995-07-11 | Motorola, Inc. | Process for forming field isolation |
| US5985736A (en) * | 1994-06-28 | 1999-11-16 | Motorola, Inc. | Process for forming field isolation |
| KR100414230B1 (en) * | 1996-12-24 | 2004-03-26 | 주식회사 하이닉스반도체 | Method for forming isolation layer of semiconductor device |
| KR100274349B1 (en) * | 1997-12-30 | 2000-12-15 | 김영환 | Method of forming a field oxide firm in a semiconductor device |
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