JPS6428962A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS6428962A JPS6428962A JP18341487A JP18341487A JPS6428962A JP S6428962 A JPS6428962 A JP S6428962A JP 18341487 A JP18341487 A JP 18341487A JP 18341487 A JP18341487 A JP 18341487A JP S6428962 A JPS6428962 A JP S6428962A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- groove
- polycrystalline
- stopper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To form a punch through stopper localized inside a substrate without complicating a manufacturing process, by composing an insulation layer to form a punch through stopper between source and drain regions more deeply on a surface layer of a semiconductor substrate. CONSTITUTION:A field oxide film 2 and a channel stopper layer 11 are formed, and next a dry etching technique is used to dig a groove 3 on one part 23 of a region where an active region of an Si substrate 1 is formed. A thin oxide film (SiO2 film) 4 of several nm - tens of nm in thickness is formed on a surface of the Si substrate 1 and an inner surface of the groove 3. Subsequently a polycrystalline Si film 5 is piled on the whole surface of the substrate. The polycrystalline Si film 5 is etched back until that on the substrate is removed, so that the polycrystalline Si film 5's part buried into the groove 3 is made to remain. In succession the insulation film 4 on the surface of the substrate is removed by etching, and also its part on the surface of the groove 3 is removed by etching. A selective epitaxial growth technique is used on this state to form a single-crystalline Si film 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18341487A JPS6428962A (en) | 1987-07-24 | 1987-07-24 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18341487A JPS6428962A (en) | 1987-07-24 | 1987-07-24 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6428962A true JPS6428962A (en) | 1989-01-31 |
Family
ID=16135362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18341487A Pending JPS6428962A (en) | 1987-07-24 | 1987-07-24 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6428962A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5173869A (en) * | 1989-12-25 | 1992-12-22 | Mazda Motor Corporation | Method of simulating a sequential control for analyzing a production line in a production system |
| US5232331A (en) * | 1987-08-07 | 1993-08-03 | Canon Kabushiki Kaisha | Automatic article feeding system |
| US5380138A (en) * | 1987-08-07 | 1995-01-10 | Canon Kabushiki Kaisha | Automatic article feeding system |
| US5868545A (en) * | 1987-08-07 | 1999-02-09 | Canon Kabushiki Kaisha | Automatic article feeding system |
-
1987
- 1987-07-24 JP JP18341487A patent/JPS6428962A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5232331A (en) * | 1987-08-07 | 1993-08-03 | Canon Kabushiki Kaisha | Automatic article feeding system |
| US5380138A (en) * | 1987-08-07 | 1995-01-10 | Canon Kabushiki Kaisha | Automatic article feeding system |
| US5868545A (en) * | 1987-08-07 | 1999-02-09 | Canon Kabushiki Kaisha | Automatic article feeding system |
| US5173869A (en) * | 1989-12-25 | 1992-12-22 | Mazda Motor Corporation | Method of simulating a sequential control for analyzing a production line in a production system |
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