JPH0758679B2 - Method for manufacturing mask for X-ray exposure - Google Patents
Method for manufacturing mask for X-ray exposureInfo
- Publication number
- JPH0758679B2 JPH0758679B2 JP29886385A JP29886385A JPH0758679B2 JP H0758679 B2 JPH0758679 B2 JP H0758679B2 JP 29886385 A JP29886385 A JP 29886385A JP 29886385 A JP29886385 A JP 29886385A JP H0758679 B2 JPH0758679 B2 JP H0758679B2
- Authority
- JP
- Japan
- Prior art keywords
- ray
- pattern
- shielding frame
- main layer
- absorptive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、微細パターンを高精度に転写するＸ線露光装
置用のＸ線露光用マスクの製造方法に係り、更に詳しく
はＸ線露光域を高精度に規定するＸ線露光用マスクの製
造方法に関する。Description: TECHNICAL FIELD The present invention relates to a method for manufacturing an X-ray exposure mask for an X-ray exposure apparatus that transfers a fine pattern with high accuracy, and more specifically to an X-ray exposure area. The present invention relates to a method for manufacturing an X-ray exposure mask that defines the above with high accuracy.
回折による微細化の限界を克服するため、より短波長の
電磁波を応用した露光方法としてＸ線露光がある。In order to overcome the limit of miniaturization due to diffraction, there is X-ray exposure as an exposure method that applies electromagnetic waves of shorter wavelength.
Ｘ線露光にはＸ線透過率のコントラストが十分大きい露
光用マスクが必要であり、その基板にはＸ線透過性の優
れた材料が選択使用され、基板上にはＸ線吸収材料薄膜
よりなるＸ線吸収性パターンが設けられ、又、一般に波
長４〜数10Åの軟Ｘ線が使用される。For X-ray exposure, an exposure mask having a sufficiently high contrast of X-ray transmittance is required, a material having excellent X-ray transmittance is selected and used for the substrate, and a thin film of X-ray absorbing material is formed on the substrate. An X-ray absorbing pattern is provided, and soft X-rays having a wavelength of 4 to several tens of Å are generally used.
このＸ線露光方法には大別して一括転写方式とステップ
アンドリピート方式の２方式がある。前者は大面積を一
括して転写するため、１μｍ以下のパターン転写では転
写精度が低下する。それ故１μｍ以下ではステップアン
ドリピート方式が主に採用されている。This X-ray exposure method is roughly classified into a batch transfer method and a step-and-repeat method. In the former case, a large area is transferred at once, so the transfer accuracy is lowered in the pattern transfer of 1 μm or less. Therefore, the step-and-repeat method is mainly used in the case of 1 μm or less.
而して１μｍ以下のパターン転写をステップアンドリピ
ート方式によって行なう場合、なるべく転写間隔をせば
めて次々と隣の位置にパターンを転写することが要求さ
れる。その際二重露光により、被転写基板上のレジスト
にかぶりを生ぜしめてしまうことを防止するため、Ｘ線
露光用マスクにはＸ線吸収性パターンを包囲して、マス
ク周辺部にＸ線露光域を規定するＸ線遮光枠パターンが
設けられている。When the pattern transfer of 1 μm or less is performed by the step-and-repeat method, it is required to transfer the pattern to the adjacent positions one after another with a transfer interval as small as possible. At that time, in order to prevent fogging of the resist on the transferred substrate due to double exposure, the X-ray exposure mask is surrounded by the X-ray absorptive pattern, and the X-ray exposure area is provided around the mask. X-ray shielding frame pattern that defines
しかしながら、従来のＸ線露光枠パターンを有する、Ｘ
線露光用マスクは、基板として0.3〜3mm厚のSiウエハ基
板を用い、Siウエハ基板上の上面に0.2〜４μｍのSi
3N4、SiO2、SiC、SiN、BN等の無機材料によりＸ線透過
性薄膜を形成し、一方Siウエハ基板の下面には同じくSi
3N4、SiO2、SiC、SiN、BN等の無機材料よりなる、保護
膜を形成し、次いでＸ線透過性薄膜上にＸ線吸収性材料
層をAuなどの重金属を蒸着するか、またはスパッタリン
グすることにより形成し、次いでドライエッチングする
か、あるいはまずメッキ下地層を設け、次いでメッキ下
地層をＸ線吸収性パターンに対応する部分が開口したレ
ジストパターンで被覆してからAuメッキし、しかるのち
前記レジストパターンを除去することにより製造される
ものであるが、Ｘ線遮光枠パターンによるＸ線遮へいが
十分になされず、ステップアンドリピートで重なって配
置されるＸ線遮光枠パターン部分において多重露光さ
れ、結果レジストのかぶりが生じてしまう。However, with the conventional X-ray exposure frame pattern, the X
The line exposure mask uses a Si wafer substrate having a thickness of 0.3 to 3 mm as a substrate, and a Si wafer having a thickness of 0.2 to 4 μm on the upper surface.
An X-ray transparent thin film is formed of an inorganic material such as 3 N 4 , SiO 2 , SiC, SiN, and BN, while Si is also formed on the lower surface of the Si wafer substrate.
Forming a protective film made of an inorganic material such as 3 N 4 , SiO 2 , SiC, SiN, and BN, and then depositing an X-ray absorbing material layer on the X-ray transmitting thin film, a heavy metal such as Au, or It is formed by sputtering and then dry-etched, or a plating underlayer is first provided, and then the plating underlayer is covered with a resist pattern in which a portion corresponding to the X-ray absorbing pattern is opened, and then Au plating is performed. After that, it is manufactured by removing the resist pattern, but the X-ray shielding by the X-ray shielding frame pattern is not sufficiently performed, and multiple exposure is performed in the X-ray shielding frame pattern portion which is overlapped by step and repeat. As a result, fogging of the resist occurs.
そこで本発明が解決しようとする問題点はＸ線遮光枠パ
ターン部分を通しての多重露光によるレジストのかぶり
を解消したＸ線露光用マスクの製造方法を提供すること
にある。Therefore, a problem to be solved by the present invention is to provide a method for manufacturing an X-ray exposure mask in which resist fogging due to multiple exposure through the X-ray light shielding frame pattern portion is eliminated.
本発明者は上記問題点を解決すべく研究の結果、Ｘ線遮
光枠パターンをさらに厚膜化すれば多重露光によるレジ
ストのかぶりを解消し得ること、Ｘ線吸収性パターンは
厚膜化せず、Ｘ線遮光枠パターンのみを厚膜に形成する
ことによりＸ線吸収性パターンのパターン精度は保持さ
れること、Ｘ線遮光枠パターンのみの厚膜化はＸ線吸収
性材料を用いてＸ線吸収性パターンを形成すると共にＸ
線遮光枠パターンの主要部を構成するＸ線遮光枠主体層
をＸ線露光用マスクの外周部に沿って形成し、次いで、
Ｘ線遮光枠主体層とＸ線吸収性パターン間を電気的に絶
縁した状態でＸ線遮光枠主体層をめっき電極に接続し、
Ｘ線遮光枠主体層上に電気めっきしてＸ線遮光枠補足層
を形成することにより繁雑なレジスト製版工程を経るこ
となく、めっき工程のみで簡単に行なうことができるこ
とを見いだし、かかる知見にもとづいて本発明を完成し
たものである。As a result of research to solve the above problems, the present inventor has found that if the X-ray shielding frame pattern is made thicker, resist fogging due to multiple exposure can be eliminated, and the X-ray absorbing pattern is not made thicker. , The pattern accuracy of the X-ray absorptive pattern is maintained by forming only the X-ray light shielding frame pattern in a thick film, and the thick film of only the X-ray absorptive frame pattern is made by using an X-ray absorptive material. X with forming an absorbent pattern
An X-ray shielding frame main layer that constitutes a main part of the line shielding frame pattern is formed along the outer peripheral portion of the X-ray exposure mask, and then,
The X-ray light-shielding frame main layer is electrically connected to the X-ray absorptive pattern, and the X-ray light-shielding frame main layer is connected to the plating electrode.
Based on such findings, it was found that by electroplating on the X-ray shading frame main layer to form the X-ray shading frame supplementary layer, it can be easily performed only by the plating process without going through a complicated resist plate making process. Thus, the present invention has been completed.
本発明のＸ線露光用マスクの製造方法はSiウエハ基板の
一面側にＸ線透過性薄膜を積層する工程と、Siウエハ基
板の他面側の支持枠下面に相当するSiウエハ基板面領域
に保護膜を設ける工程と、Ｘ線吸収性材料を用いてＸ線
吸収性パターンを形成すると共にＸ線遮光枠パターンの
主要部を構成するＸ線遮光枠主体層をＸ線露光用マスク
の外周部に沿って形成する工程と、Ｘ線遮光枠主体層と
Ｘ線吸収性パターン間を電気的に絶縁した状態でＸ線遮
光枠主体層をめっき電極に接続し、Ｘ線遮光枠主体層上
に電気めっきしてＸ線遮光枠補足層を形成する工程とSi
ウエハ基板の一部を保護膜が設けられた面側から一回の
みのエッチングを行って除去し、窓を形成する工程とか
らなる。An X-ray exposure mask manufacturing method of the present invention comprises a step of laminating an X-ray transparent thin film on one side of a Si wafer substrate, and a Si wafer substrate surface region corresponding to the lower surface of a supporting frame on the other side of the Si wafer substrate. The step of providing a protective film, forming the X-ray absorbing pattern using an X-ray absorbing material, and forming the X-ray shielding frame main layer constituting the main part of the X-ray shielding frame pattern into the outer peripheral portion of the X-ray exposure mask. And a step of forming the X-ray shielding frame main layer and the X-ray absorbing pattern in a state where the X-ray shielding frame main layer and the X-ray absorbing pattern are electrically insulated from each other. Electroplating process to form X-ray shielding frame supplementary layer and Si
A part of the wafer substrate is removed by performing etching only once from the surface side provided with the protective film to form a window.
以下、本発明の製造方法について図面を用いて詳細に説
明する。Hereinafter, the manufacturing method of the present invention will be described in detail with reference to the drawings.
第１図ａ図示のような0.3〜3mm厚のSiウエハ１を基板と
し、第１図ｂ図示の如くSiウエハ１の両面に0.2〜４μ
ｍ厚のSiN4、SiO2、SiC、SiN、BNなどの無機材料をスパ
ッタリングまたはCVD（chemical vapor deposition）法
によりＸ線透過性薄膜２、２′を形成し、次いで第１図
ｃ図示の如く、プラズマエッチングまたはRIE（reactiv
e ion etching）などの方法により下側のＸ線透過性材
料層２′のＸ線透過窓に相当する部分を除去して枠状の
保護膜３を形成する。次いで第１図ｄに示す如く、上側
のＸ線透過性薄膜２の上に厚さ0.2〜1.2μｍのAu、Ta、
Ｗなどの重金属を蒸着またはスパッタリングした後ドラ
イエッチングしてパターニングするか、或いはＸ線透過
性薄膜面上に例えば50〜200ÅのCrと200〜600ÅのAuを
連続して蒸着もしくはスパッタリングしてメッキ下地層
を形成した後、メッキ下地層面をＸ線吸収性パターンに
対応する部分が開口したレジストパターンで被覆してか
ら金メッキし、しかるのち前記レジストパターンを除去
する方法によりＸ線吸収性パターン６及びＸ線遮光枠主
体層５を形成する。A Si wafer 1 having a thickness of 0.3 to 3 mm as shown in FIG. 1a is used as a substrate, and 0.2 to 4 μm on both sides of the Si wafer 1 as shown in FIG. 1b.
An X-ray transparent thin film 2, 2'is formed by sputtering or CVD (chemical vapor deposition) method using an inorganic material such as m-thick SiN 4 , SiO 2 , SiC, SiN, BN, and then as shown in FIG. 1c. , Plasma etching or RIE (reactiv
The frame-shaped protective film 3 is formed by removing a portion of the lower X-ray transparent material layer 2'corresponding to the X-ray transparent window by a method such as ion etching. Then, as shown in FIG. 1d, Au, Ta having a thickness of 0.2 to 1.2 μm is formed on the upper X-ray transparent thin film 2.
After heavy metal such as W is vapor-deposited or sputtered, it is dry-etched for patterning, or, for example, 50-200Å Cr and 200-600Å Au are continuously vapor-deposited or sputtered on the X-ray transmissive thin film surface for plating. After the formation of the base layer, the surface of the plating underlayer is covered with a resist pattern having openings corresponding to the X-ray absorbing pattern, and then gold plating is performed. Then, the resist pattern is removed to obtain the X-ray absorbing patterns 6 and X. The line shading frame main layer 5 is formed.
次いでめっき法によりＸ線吸収性パターンのパターン形
成を行なった場合はＸ線吸収性パターン６とＸ線遮光枠
主体層５間を接続するメッキ下地層を除去し、蒸着法ま
たはスパッタリング法による場合はパターン形成後、Ｘ
線吸収材料とＸ線透過性薄膜との接着層を除去し、Ｘ線
遮光枠主体層５とＸ線吸収性パターン６間を電気的に絶
縁した状態でＸ線遮光枠主体層５をめっき電極に接続
し、電気めっきして、第１図ｅ図示の如くＸ線遮光枠主
体層５上に0.5〜３μｍの膜厚にAu、Pt、Pb等の金属ま
たはＷ合金をめっきしてＸ線遮光枠補足層７を形成し、
Ｘ線遮光枠主体層５とＸ線遮光枠補足層７の積層物より
なる、Ｘ線吸収性パターン６よりも厚膜のＸ線遮光枠パ
ターン８を形成する。Next, when the X-ray absorbing pattern is formed by the plating method, the plating underlayer connecting the X-ray absorbing pattern 6 and the X-ray shielding frame main layer 5 is removed, and when the evaporation method or the sputtering method is used. After pattern formation, X
The adhesive layer between the X-ray absorbing material and the X-ray transparent thin film is removed, and the X-ray shielding frame main layer 5 and the X-ray absorbing frame main layer 5 are electrically insulated from each other. And electroplating, and as shown in FIG. 1e, a metal such as Au, Pt, Pb or a W alloy with a thickness of 0.5 to 3 μm is plated on the X-ray shielding frame main layer 5 to shield the X-rays. Forming the frame supplementary layer 7,
An X-ray shielding frame pattern 8 having a thicker film than the X-ray absorptive pattern 6 is formed by a laminate of the X-ray shielding frame main layer 5 and the X-ray shielding frame supplementary layer 7.
最後に第１図ｆ図示の如く、保護膜５で保護されていな
いウエハ基板の１部分を裏面からエッチング除去して窓
９を形成することによりＸ線露光用マスクを作製するこ
とができる。Finally, as shown in FIG. 1f, an X-ray exposure mask can be manufactured by etching away a portion of the wafer substrate not protected by the protective film 5 from the back surface to form the window 9.
Siウエハのエッチングの際、Ｘ線透過性薄膜、Ｘ線吸収
性パターン、及びＸ線遮光枠パターンを保護するため
に、テフロン、Ｏリングなどよりなる治具を使用し、
又、エッチング液としては例えば20〜30％のKOH水溶液
やHF:HNO3：CH3COOH＝1:3:1のHF系、混合液を使用する
ことにより良好にSiウエハの一部をエッチング除去でき
る。When etching the Si wafer, a jig made of Teflon, O-ring, etc. is used to protect the X-ray transparent thin film, the X-ray absorbing pattern, and the X-ray shielding frame pattern.
Also, as the etching solution, for example, a 20-30% KOH aqueous solution or HF: HNO 3 : CH 3 COOH = 1: 3: 1 HF system, a mixed solution can be used to satisfactorily remove a part of the Si wafer by etching. it can.
次にネガ型のＸ線レジストに転写するＸ線露光用マスク
の場合Ｘ線遮光枠としての部分とＸ線吸収性パターンが
連続しており、Ｘ線吸収性パターン上にもめっきが成長
してしまうので第２図ａに示すようにＸ線吸収性パター
ン形成の際に、Ｘ線露光域を規定する10〜50μｍの幅程
度の溝10を設け、その後、前述した方法で電気めっきを
行ない、第２図ｂの如くＸ線マスクを作製する。Next, in the case of an X-ray exposure mask which is transferred to a negative X-ray resist, the X-ray absorptive pattern is continuous with the X-ray absorptive frame, and plating also grows on the X-ray absorptive pattern. Therefore, as shown in FIG. 2a, when forming the X-ray absorbing pattern, a groove 10 having a width of 10 to 50 μm defining the X-ray exposure area is provided, and then electroplating is performed by the method described above. An X-ray mask is prepared as shown in FIG. 2b.
実施例１ ２″φSiウエハを基板としたＸ線露光用マスクの作製を
以下の手順で行なった。Siウエハ上に成膜した１μｍ厚
のSiN膜の上のめっき下地である金膜上にパターン形成
した厚さ1.5μｍのフォトレジストAZ−1350（ヘキスト
製）をめっきスペーサとして金を0.8μｍ成長させた。
その後、アセトンによりAZ−1350を溶解除去し、金のめ
っき下地をアルゴンガスプラズマにより、スパッタエッ
チング除去後、Ｘ線露光域の外周部にめっき電極を接続
し、金めっきを1.2μｍ成長させ、２μｍ厚の金のＸ線
遮光枠パターンを形成した。Example 1 An X-ray exposure mask using a 2 ″ φ Si wafer as a substrate was prepared by the following procedure: A pattern was formed on a gold film which is a plating base on a 1 μm-thick SiN film formed on a Si wafer. Gold was grown to 0.8 μm using the formed photoresist AZ-1350 (made by Hoechst) having a thickness of 1.5 μm as a plating spacer.
After that, AZ-1350 was dissolved and removed with acetone, and the gold plating base was removed by sputter etching with argon gas plasma, and then a plating electrode was connected to the outer peripheral portion of the X-ray exposure area to grow gold plating to 1.2 μm and 2 μm. A thick gold X-ray shield frame pattern was formed.
尚金めっきの作業条件は下記の通りであった。The working conditions for gold plating were as follows.
即ち、メッキ液としてpH7のオウロール292M（ジャパン
ロナール社製）を用いて設定電流密度1mA/cm2、液温50
℃、メッキ時間13分間により1.2μｍの厚さを有するAu
膜を形成した。That is, using Aurol 292M (manufactured by Japan Ronard) having a pH of 7 as the plating solution, the set current density was 1 mA / cm 2 , and the solution temperature was 50.
Au with a thickness of 1.2 μm at ℃, plating time 13 minutes
A film was formed.
最後に20％KOH水溶液でSi裏面エッチングを行ないＸ線
露光用マスクを作製した。Finally, the back surface of Si was etched with a 20% KOH aqueous solution to prepare an X-ray exposure mask.
実施例２ ２″φSiウエハを基板としたＸ線露光用マスクの作製を
以下の手順で行なった。Siウエハに成膜した２μｍ厚の
BN膜の上にスパッタリング法により0.6μｍ厚のタング
ステン膜を成膜後、電子ビームでパターン形成したレジ
ストCMS−EX（東洋曹達社製）をマスクとして、CCI4ガ
スによるRIE法を用いてタングステンのＸ線吸収体パタ
ーンを形成した。次いでＸ線露光域の外周部にめっき電
極を接続し、タングステン膜の上に金めっきを２μｍ成
長させ、Ｗ厚0.6μｍ、とAu膜２μｍの積層物よりなる
Ｘ線遮光枠パターンを形成した。Example 2 An X-ray exposure mask using a 2 ″ φ Si wafer as a substrate was manufactured by the following procedure. A 2 μm thick film was formed on a Si wafer.
After forming a 0.6 μm thick tungsten film on the BN film by the sputtering method, using the resist CMS-EX (manufactured by Toyo Soda Co., Ltd.) patterned by an electron beam as a mask, the RIE method using CCI 4 gas is used to remove the tungsten film. An X-ray absorber pattern was formed. Next, a plating electrode was connected to the outer peripheral portion of the X-ray exposure area, gold plating was grown to a thickness of 2 μm on the tungsten film, and an X-ray light shielding frame pattern made of a laminate of W thickness 0.6 μm and Au film 2 μm was formed.
尚、金めっきの条件は下記の通りであった。The conditions of gold plating were as follows.
即ち、メッキ液としてpH7のオウロール292M（ジャパン
ロナール社製）を用いて設定電流密度2mA/cm2、液温50
℃、メッキ時間10分間により２μｍの厚さを有する金膜
を形成した。That is, using Aurol 292M (manufactured by Japan Ronard) having a pH of 7 as the plating solution, the set current density was 2 mA / cm 2 , and the solution temperature was 50.
A gold film having a thickness of 2 μm was formed at a temperature of ℃ for 10 minutes.
最後に30％KOH水溶液でSi裏面エッチングを行ないＸ線
露光用マスクを製作した。Finally, the back surface of Si was etched with a 30% KOH aqueous solution to manufacture an X-ray exposure mask.
本発明の製造方法によれば繁雑なレジスト製版工程を経
ることなく、めっき工程のみで簡単にＸ線遮光枠パター
ン部分を厚膜化して、Ｘ線遮光枠パターン部分を通して
の多重露光によるレジストのかぶりを解消したＸ線露光
マスクを生産性良く製造することができる。According to the manufacturing method of the present invention, the fogging of the resist by the multiple exposure through the X-ray light-shielding frame pattern portion can be easily achieved by simply thickening the X-ray light-shielding frame pattern portion only by the plating step without the complicated resist plate making step. It is possible to manufacture the X-ray exposure mask which has solved the above problem with high productivity.
又、Ｘ線遮光枠パターン部分のみを厚膜化し、Ｘ線吸収
性パターンは厚膜化しないのでＸ線吸収性パターンの加
工精度を従来のＸ線露光用マスクのＸ線吸収性パターン
の加工精度と同程度に維持したまま製造することができ
る。Further, since only the X-ray shielding frame pattern portion is thickened and the X-ray absorptive pattern is not thickened, the processing accuracy of the X-ray absorptive pattern is the same as that of the conventional X-ray exposure mask. Can be manufactured while maintaining the same level as the above.
第１図ａないしｆは本発明の製造方法の製造過程を示す
断面図、第２図ａ、及びｂはネガ型のＸ線レジストに転
写するＸ線露光用マスクを示し、ａは平面図、ｂは断面
図である。 １……Siウエハ ２、２′……Ｘ線透過性薄膜 ５……Ｘ線遮光枠主体層 ６……Ｘ線吸収性パターン ７……Ｘ線遮光枠補足層 ８……Ｘ線遮光枠 10……溝1A to 1F are sectional views showing the manufacturing process of the manufacturing method of the present invention, FIGS. 2A and 2B show an X-ray exposure mask transferred to a negative X-ray resist, and a is a plan view. b is a sectional view. 1 ... Si wafer 2, 2 '... X-ray transparent thin film 5 ... X-ray shielding frame main layer 6 ... X-ray absorbing pattern 7 ... X-ray shielding frame supplementary layer 8 ... X-ray shielding frame 10 ……groove
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭59−62855（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-59-62855 (JP, A)
Claims (1)
積層する工程と、Siウエハ基板の他面側の支持枠下面に
相当するSiウエハ基板面領域に保護膜を設ける工程と、
Ｘ線吸収性材料を用いてＸ線吸収性パターンを形成する
と共にＸ線遮光枠パターンの主要部を構成するＸ線遮光
枠主体層をＸ線露光用マスクの外周部に沿って形成する
工程と、Ｘ線遮光枠主体層とＸ線吸収性パターン間を電
気的に絶縁した状態でＸ線遮光枠主体層をめっき電極に
接続し、Ｘ線遮光枠主体層上に電気めっきして、Ｘ線遮
光枠補足層を形成する工程とSiウエハ基板の一部を保護
膜が設けられた面側から一回のみのエッチングを行って
除去し、窓を形成する工程とからなることを特徴とする
Ｘ線露光用マスクの製造方法。1. A step of laminating an X-ray transparent thin film on one surface side of a Si wafer substrate, and a step of providing a protective film in a Si wafer substrate surface area corresponding to a lower surface of a supporting frame on the other surface side of the Si wafer substrate,
A step of forming an X-ray absorptive pattern using an X-ray absorptive material and forming an X-ray absorptive frame main layer constituting a main part of the X-ray absorptive frame pattern along the outer peripheral portion of the X-ray exposure mask; , The X-ray light-shielding frame main layer is electrically insulated from the X-ray absorptive pattern, the X-ray light-shielding frame main layer is connected to a plating electrode, and the X-ray light-shielding frame main layer is electroplated to form an X-ray. X comprising a step of forming a light-shielding frame supplemental layer and a step of removing a part of the Si wafer substrate by etching only once from the surface side provided with the protective film to form a window. Method for manufacturing line exposure mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29886385A JPH0758679B2 (en) | 1985-12-28 | 1985-12-28 | Method for manufacturing mask for X-ray exposure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29886385A JPH0758679B2 (en) | 1985-12-28 | 1985-12-28 | Method for manufacturing mask for X-ray exposure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62158324A JPS62158324A (en) | 1987-07-14 |
| JPH0758679B2 true JPH0758679B2 (en) | 1995-06-21 |
Family
ID=17865165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29886385A Expired - Lifetime JPH0758679B2 (en) | 1985-12-28 | 1985-12-28 | Method for manufacturing mask for X-ray exposure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0758679B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63104327A (en) * | 1986-10-20 | 1988-05-09 | Mitsubishi Electric Corp | X-ray mask and manufacture thereof |
| US5124561A (en) * | 1991-04-04 | 1992-06-23 | International Business Machines Corporation | Process for X-ray mask warpage reduction |
| JP5515773B2 (en) * | 2010-01-21 | 2014-06-11 | 大日本印刷株式会社 | Reflective mask having light-shielding frame and method for manufacturing the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5962855A (en) * | 1982-10-04 | 1984-04-10 | Nippon Kogaku Kk <Nikon> | Mask for x-ray exposure |
-
1985
- 1985-12-28 JP JP29886385A patent/JPH0758679B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62158324A (en) | 1987-07-14 |
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| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |