JPH01125930A - X-ray mask - Google Patents
X-ray maskInfo
- Publication number
- JPH01125930A JPH01125930A JP62284711A JP28471187A JPH01125930A JP H01125930 A JPH01125930 A JP H01125930A JP 62284711 A JP62284711 A JP 62284711A JP 28471187 A JP28471187 A JP 28471187A JP H01125930 A JPH01125930 A JP H01125930A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- frame
- membrane
- ray mask
- ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 24
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 15
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052582 BN Inorganic materials 0.000 claims abstract description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 239000012528 membrane Substances 0.000 abstract description 17
- 238000005530 etching Methods 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 abstract description 8
- 239000006096 absorbing agent Substances 0.000 abstract description 8
- 239000005297 pyrex Substances 0.000 abstract description 8
- 239000011521 glass Substances 0.000 abstract description 6
- 229910001385 heavy metal Inorganic materials 0.000 abstract description 2
- 229910052580 B4C Inorganic materials 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 238000001015 X-ray lithography Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229920006332 epoxy adhesive Polymers 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
本発明はＸ線リソグラフィ用マスクの構成材料に関し、
熱膨張係数が近似し且つ耐薬品性に乏しい材料を支持枠
として使用可能ならしめることを目的とし、
シリコンと同じ或いは近似の熱膨張係数を有し、且つシ
リコンを腐食する薬品によって同様に腐食される材料の
表面を、窒化硼素、炭窒化硼素、炭化珪素或いは窒化珪
素で被覆した環状成型体を支持枠として使用する如く構
成する。[Detailed Description of the Invention] [Summary] The present invention relates to constituent materials of X-ray lithography masks, and aims to enable materials with similar thermal expansion coefficients and poor chemical resistance to be used as support frames. Supports an annular molded body whose surface is coated with boron nitride, boron carbonitride, silicon carbide, or silicon nitride, a material that has the same or similar thermal expansion coefficient as silicon and is corroded in the same way by chemicals that corrode silicon. Configure it to be used as a frame.
本発明はＸ線リソグラフィ用マスクの構成材料に関する
ものである。The present invention relates to constituent materials of masks for X-ray lithography.
Ｘ線リソグラフィは半導体装置の製造等に多用されてい
るが、微細パターンの形成を目的とするものであるから
、残留応力などによってパターンが変形することは避け
ねばならない。X-ray lithography is widely used in the manufacture of semiconductor devices, etc., but since its purpose is to form fine patterns, deformation of the pattern due to residual stress must be avoided.
更にその基本構造は、高密度のＸ線吸収体から成るマス
クパターンを、Ｘ線吸収が無視できる程の薄さのメンブ
レンで保持するものであり、補強構造が不可欠であると
ころから、現実のＸ線マスクの構造は製、遣方法に密接
に関わっている。Furthermore, its basic structure is to hold a mask pattern consisting of a high-density X-ray absorber with a membrane so thin that X-ray absorption can be ignored. The structure of a line mask is closely related to the way it is manufactured and used.
公知のＸ線マスクの通常のものは第３図の構造を有する
。即ち、メンブレンと呼ばれるＸ線吸収の少ない薄膜１
の上に、所定のパターンに成形されたＸ線吸収体２を被
着した構造を基本とし、メンブレンを完全な平面に形成
するための補助材であるＳｉウェファ３と、全体に機械
的強度を与えるための支持枠４から成る。図は切断面を
模式的に示すものであるが、全体の平面形状は円形であ
り、支持枠そのものは平らな円環形である。A typical known X-ray mask has the structure shown in FIG. In other words, a thin film called a membrane 1 with low X-ray absorption
The basic structure is that an X-ray absorber 2 formed in a predetermined pattern is adhered to the top of the membrane, and a Si wafer 3 is used as an auxiliary material to form the membrane into a perfect plane, and the mechanical strength of the whole is increased. It consists of a support frame 4 for feeding. Although the figure schematically shows a cut surface, the overall planar shape is circular, and the support frame itself is a flat annular shape.
かかる構造を実現するための一般的な製造方法は、第４
図（ａｌに示す如く、Ｓｉウェファ３の表面にＳｉＣ或
いはポリマーなどの皮膜１′を設け、同図（ｂｌに示す
如く支持枠４を接着した後、Ｓｉウェファの背面からＨ
Ｆ／ＨＮＯ，系エツチング液でエツチングを施してメン
ブレン１を形成し、更に引き続き、その上に所定パター
ンの吸収体２を形成するというものである。A general manufacturing method for realizing such a structure is the fourth method.
As shown in Figure (al), a film 1' of SiC or polymer is provided on the surface of the Si wafer 3, and a support frame 4 is bonded as shown in Figure (bl).
A membrane 1 is formed by etching with an F/HNO etching solution, and then an absorber 2 in a predetermined pattern is formed thereon.
この工程では吸収体パターンの形成などにレジスト類が
使用され、そのベーキング等の処理のため２００℃程度
に昇温されることが避けられないから、支持枠の熱膨張
係数がＳｔに対し著しく異なると、この熱履歴の応力に
よって歪が発生することになる。In this process, resists are used to form absorber patterns, and it is unavoidable that the temperature is raised to about 200°C for baking and other treatments, so the thermal expansion coefficient of the support frame is significantly different from St. Then, the stress of this thermal history causes distortion.
単に熱膨張係数だけを合わせるのであれば、パイレック
スガラスやＳｉのバルクを支持枠として用いればよいこ
とになるが、このような材料ではＳｉウェファを背面か
らエツチングする工程で一緒にエツチングされてしまう
。それを避けようとすれば製造方法が複雑になり、歩留
まり或いはコストの面で不利となる。If only the coefficient of thermal expansion were to be matched, a bulk of Pyrex glass or Si could be used as the support frame, but such materials would be etched together in the process of etching the Si wafer from the back. If an attempt is made to avoid this, the manufacturing method will become complicated, which will be disadvantageous in terms of yield or cost.
従来知られている支持枠の材料は、大別すると、（１）
Ｂ ｅ、 ＡＩ 、 Ｔ ｉ、’ Ｃｒ或いはステンレ
ス鋼等の金属系、（２）石英、（３）パイレックス等の
ガラス系、（４１Ｓｉであるが、金属系はＳｉに比べて
熱膨張係数が大きすぎ、反対に石英は小さ過ぎるため、
上記の熱処理で応力が生ずることになる。パイレックス
は熱膨張係数はＳｔに近いが耐薬品性に問題があり、Ｓ
ｉの等方性エツチング液であるＨＦ／ＨＮ○、に侵され
るので、そのままでは使えない。Conventionally known materials for support frames can be broadly classified into (1)
B e, AI, T i,' Metal-based materials such as Cr or stainless steel, (2) Quartz, (3) Glass-based materials such as Pyrex, (41Si, but metal-based materials have a larger coefficient of thermal expansion than Si. On the other hand, quartz is too small,
The above heat treatment will generate stress. Pyrex has a coefficient of thermal expansion close to St, but has a problem with chemical resistance, and S
It cannot be used as is because it will be attacked by the isotropic etching solution HF/HN○.
ＳｉＣのようなセラミックを使用するという着想もある
が、成型精度を高めようとすると、コストが上昇する等
の問題がある。Although there is an idea to use ceramics such as SiC, there are problems such as an increase in cost when trying to improve molding precision.
本発明は熱膨張係数に主眼を置いて材料を選択した場合
、耐エツチング特性に問題が生ずる点を解消しようとす
るものである。The present invention is intended to solve the problem that occurs when materials are selected with emphasis on their thermal expansion coefficients, which causes problems in etching resistance.
ｃ問題点を解決するための手段〕
パイレックスなど、熱膨張係数がＳｉに近いガラス系材
料はＳｔのエツチング液に同様に侵される問題を解決す
るため、本発明では
シリコンと同じ或いは近似の熱膨張係数を有し、且つシ
リコンを腐食する薬品によって同様に腐食される材料の
表面を、窒化硼素、炭窒化硼素、炭化珪素或いは窒化珪
素で被覆した環状成型体を支持枠とする。Measures for Solving Problem c] In order to solve the problem that glass-based materials such as Pyrex, which have a thermal expansion coefficient close to that of Si, are similarly attacked by St etching liquid, in the present invention The supporting frame is an annular molded body whose surface is coated with boron nitride, boron carbonitride, silicon carbide, or silicon nitride, and the surface of a material that has a coefficient of corrosion and is corroded in the same way by chemicals that corrode silicon.
窒化硼素、炭窒化硼素、炭化珪素或いは窒化珪素といっ
た材料はメンブレンとしても使用される材料であり、通
常のＳｔエツチング液には侵されないという特徴がある
。従って支持枠の表面にこれ等の材料を被覆しておけば
、Ｓｉウェファを背面からエツチングする工程でも支持
枠が損傷を受けることがない。Materials such as boron nitride, boron carbonitride, silicon carbide, and silicon nitride are materials that are also used as membranes, and have the characteristic that they are not attacked by ordinary St etching solutions. Therefore, if the surface of the support frame is coated with these materials, the support frame will not be damaged even during the process of etching the Si wafer from the back side.
第１図は本発明の一つの実施例を示す断面模式図である
。メンブレン１は公知の材料、例えばＳｉＣであり、Ｘ
線吸収体２も同様で、例えばタングステン或いは金など
の重金属である。３のＳｉウェファが、メンブレンを完
全な平面に形成するための補助材である点も公知技術と
同様である。FIG. 1 is a schematic cross-sectional view showing one embodiment of the present invention. The membrane 1 is a known material, for example SiC, and
The same applies to the line absorber 2, which is made of heavy metal such as tungsten or gold. It is also similar to the known technology in that the Si wafer No. 3 is an auxiliary material for forming a perfectly flat membrane.
４はパイレックスガラスを平板円環形に成型した支持枠
であり、その表面はＳｉＣ皮膜５によっテ被覆されてい
る。該支持枠とメンブレンを保持するＳｉウニ、ファ３
の環状残片とはエポキシ系の接着剤によって固着されて
いる。Reference numeral 4 denotes a support frame made of Pyrex glass molded into a flat annular shape, the surface of which is coated with a SiC film 5. Si urchin and fa 3 that hold the support frame and membrane
It is fixed to the annular piece with epoxy adhesive.
かかる構成体は第２図に示す工程によって製造される。Such a structure is manufactured by the steps shown in FIG.
以下、同図を参照しながら、実施例の構造の製造工程を
説明する。Hereinafter, the manufacturing process of the structure of the example will be explained with reference to the same figure.
先ず、Ｓｉウェファ３の全面にＣＶＤ法によって２〜６
μｍの厚さの５ｉＣ１！Ｉｆ’を被着しく（ａ）図）、
メンブレン形成部分の背面のＳ ｉ Ｃ＠を選択的に除
去する（（ｂ）図）。First, the entire surface of the Si wafer 3 is coated with 2 to 6
5iC1 with a thickness of μm! If' is attached (Fig. a)),
S i C@ on the back side of the membrane forming part is selectively removed (Figure (b)).
別に、厚さ５■のパイレックスガラスを平板円（（Ｃ）
図）。Separately, a flat circle of Pyrex glass with a thickness of 5 cm ((C)
figure).
ＳｉＣ皮膜を選択的に除去したＳｉウェファとＳｉＣ被
覆したパイレックス支持枠をエポキシ系の接着剤で接着
し、ＳｉウェファをＩＦ／ＨＮＯｓ系の等方性エラチン
・ダ液でエツチングしく （ｄ）図）、メンブレンｌを
形成する（（ｅ）図）、この時、支持枠はＳｉＣ被覆さ
れているのでエツチング液に侵されることがない。The Si wafer from which the SiC film has been selectively removed and the SiC-coated Pyrex support frame are glued together with an epoxy adhesive, and the Si wafer is etched with an isotropic IF/HNOs eratin solution (Figure d). At this time, the support frame is coated with SiC, so that it will not be attacked by the etching solution.
メンブレン上面にＷ膜を堆積してパターニングし、場合
により金めっきして所定の形状のｘｖＡ吸収体２を形成
する（（ｆ）図）。A W film is deposited on the upper surface of the membrane, patterned, and optionally plated with gold to form an xvA absorber 2 in a predetermined shape (FIG. (f)).
上記実施例で使用した材料の他に、支持枠には単結晶Ｓ
ｉ或いは多結晶Ｓｉが、メンブレンにはＢＮＳＢＮＣ，
Ｓ ｉＮあるいはポリマーなどが使用可能であり、支持
枠の被覆にはメンブレンと同様の材料が使用できる。メ
ンブレンと支持枠被覆膜に同材料を使用すれば、エツチ
ング液の選択上有利である。In addition to the materials used in the above examples, the support frame was made of single crystal S.
i or polycrystalline Si, the membrane is BNSBNC,
SiN or polymer can be used, and the same material as the membrane can be used to cover the support frame. Use of the same material for the membrane and support frame coating film is advantageous in selecting an etching solution.
以上の説明から明らかなように、本発明のＸ線マスクは
Ｓｔと熱膨張係数の近似した材料を支持枠としているの
で、製造工程中の温度変化による熱歪の発生がなく、微
細パターンを精度良く形成することが出来る。As is clear from the above explanation, since the X-ray mask of the present invention uses a material with a thermal expansion coefficient similar to that of St as a support frame, there is no thermal strain caused by temperature changes during the manufacturing process, and fine patterns can be precisely formed. It can be formed well.
また、本発明の構造では、Ｓｉウェファをエツチングす
る工程でも、支持枠はエツチングされることがない。Further, in the structure of the present invention, the support frame is not etched even in the step of etching the Si wafer.
第１図は実施例のＸ線マスクの断面模式図、第２図は本
発明の製造工程例を示す模式図、第３図は公知のＸ線マ
スクの断面模式図、第４図は公知の製造工程を示す模式
図
であって、
図に於いて
１はメンブレン、
１′はＳ ｉＣｓ
２はＸ線吸収体、
３はＳｉウェファ、
４は支持枠、
５はＳｉＣ皮膜
である。
第１図
本発明の製造工程例を示す模式図
第２図Fig. 1 is a schematic cross-sectional view of an X-ray mask according to an embodiment, Fig. 2 is a schematic view showing an example of the manufacturing process of the present invention, Fig. 3 is a schematic cross-sectional view of a known X-ray mask, and Fig. 4 is a schematic cross-sectional view of a known X-ray mask. 1 is a schematic diagram showing the manufacturing process, in which 1 is a membrane, 1' is SiCs, 2 is an X-ray absorber, 3 is a Si wafer, 4 is a support frame, and 5 is a SiC film. Fig. 1 Schematic diagram showing an example of the manufacturing process of the present invention Fig. 2
Claims (1)
シリコンを腐食する薬品によって同様に腐食される材料
の表面を、窒化硼素、炭窒化硼素、炭化珪素或いは窒化
珪素で被覆した環状成型体を支持枠として構成されるこ
とを特徴とするＸ線マスク。Supports an annular molded body whose surface is coated with boron nitride, boron carbonitride, silicon carbide, or silicon nitride, a material that has the same or similar thermal expansion coefficient as silicon and is corroded in the same way by chemicals that corrode silicon. An X-ray mask characterized by being configured as a frame.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62284711A JPH01125930A (en) | 1987-11-11 | 1987-11-11 | X-ray mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62284711A JPH01125930A (en) | 1987-11-11 | 1987-11-11 | X-ray mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01125930A true JPH01125930A (en) | 1989-05-18 |
Family
ID=17681991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62284711A Pending JPH01125930A (en) | 1987-11-11 | 1987-11-11 | X-ray mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01125930A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02181906A (en) * | 1989-01-09 | 1990-07-16 | Canon Inc | X-ray transmitting film holding frame, x-ray mask blank and x-ray mask structure |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5347663A (en) * | 1976-10-12 | 1978-04-28 | Mitsubishi Electric Corp | Hall indicator system for elevator |
| JPS53143171A (en) * | 1977-05-20 | 1978-12-13 | Hitachi Ltd | Mask for x-ray transfer |
| JPS61245162A (en) * | 1985-04-23 | 1986-10-31 | Fujitsu Ltd | X-ray mask |
| JPS61255346A (en) * | 1985-05-09 | 1986-11-13 | Hitachi Metals Ltd | Mask for x-ray exposing |
| JPS62149132A (en) * | 1985-08-02 | 1987-07-03 | マイクロニクス コ−ポレ−シヨン | Manufacture of mask for x-ray photolithography and structureobtained as the result of the manufacture |
-
1987
- 1987-11-11 JP JP62284711A patent/JPH01125930A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5347663A (en) * | 1976-10-12 | 1978-04-28 | Mitsubishi Electric Corp | Hall indicator system for elevator |
| JPS53143171A (en) * | 1977-05-20 | 1978-12-13 | Hitachi Ltd | Mask for x-ray transfer |
| JPS61245162A (en) * | 1985-04-23 | 1986-10-31 | Fujitsu Ltd | X-ray mask |
| JPS61255346A (en) * | 1985-05-09 | 1986-11-13 | Hitachi Metals Ltd | Mask for x-ray exposing |
| JPS62149132A (en) * | 1985-08-02 | 1987-07-03 | マイクロニクス コ−ポレ−シヨン | Manufacture of mask for x-ray photolithography and structureobtained as the result of the manufacture |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02181906A (en) * | 1989-01-09 | 1990-07-16 | Canon Inc | X-ray transmitting film holding frame, x-ray mask blank and x-ray mask structure |
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