JPS6022845B2 - voltage controlled oscillator - Google Patents
voltage controlled oscillatorInfo
- Publication number
- JPS6022845B2 JPS6022845B2 JP52147542A JP14754277A JPS6022845B2 JP S6022845 B2 JPS6022845 B2 JP S6022845B2 JP 52147542 A JP52147542 A JP 52147542A JP 14754277 A JP14754277 A JP 14754277A JP S6022845 B2 JPS6022845 B2 JP S6022845B2
- Authority
- JP
- Japan
- Prior art keywords
- collector
- transistor
- oscillation frequency
- circuit
- voltage controlled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
- H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Description
【発明の詳細な説明】 本発明は電圧制御発振器に関するものである。[Detailed description of the invention] The present invention relates to voltage controlled oscillators.
従来の技術の１例を第１図によって説明する。ベースと
コレクタをそれぞれ他のトランジスタのコレクタとべ‐
スに接続したトランジスタ１，２のェミッタを共通接続
して電流源３に接続する。トランジスタ１のコレクタは
直接電源端子４に接続し、トランジスタ２のコレクタは
コイル５とコンデンサ６からなる並列共振回路を通して
電源端子４に接続する。トランジスタ２のコレクタから
コンデンサ７を通して可変容量ダイオード８に接続し可
変容量ダイオードの反対側はＧＮＤ（接地端子）９に接
続する。制御入力端子１０から抵抗１１を通して上記コ
ンデンサ７と可変容量ダイオード８の接続点へ接続する
。この電圧制御発振器の発振周波数匁ｓｃはｂＳＣニ・
／２汀ノＬ（Ｃ＋ＣＤ） ……｛１）で与えられ
る。An example of a conventional technique will be explained with reference to FIG. Connect the base and collector to the collector of the other transistor.
The emitters of transistors 1 and 2 connected to the current source 3 are commonly connected and connected to a current source 3. The collector of the transistor 1 is directly connected to the power supply terminal 4, and the collector of the transistor 2 is connected to the power supply terminal 4 through a parallel resonant circuit consisting of a coil 5 and a capacitor 6. The collector of the transistor 2 is connected to a variable capacitance diode 8 through a capacitor 7, and the other side of the variable capacitance diode is connected to GND (ground terminal) 9. A control input terminal 10 is connected through a resistor 11 to a connection point between the capacitor 7 and the variable capacitance diode 8. The oscillation frequency momme sc of this voltage controlled oscillator is bSCni.
/2 level L (C + CD) ... is given by {1).
ただし、Ｃ７》Ｃｏ．Ｒ，．》２ｍｆｏｓｃＬ。Ｃ ：
コンデンサ６の容量、
ＣＤ：可変容量ダイオード７の容量、
Ｒ，．：抵抗１１の大きさ。However, C7》Co. R,. 》2mfoscL. C:
Capacity of capacitor 6, CD: Capacitance of variable capacitance diode 7, R, . : Size of resistor 11.
ここで可変容量ダイオード８の容量Ｃ。Here, the capacitance C of the variable capacitance diode 8.
は制御入力電圧によって変化させられるので発振周波数
が変化できる。上記のように従来はコイルとコンデンサ
で構成される共振回路を用いた電圧制御発振器では可変
容量ダイオードを用いて発振周波数を変化させていた。
しかし、この回路構成では可変容量ダイオードの容量変
化幅の大きさ、制御幅に対する容量変化の直線性、同調
容量としてのＱ特性が要求されるためコストが高くなり
、又集積回路化が困難な回路構成である欠点があった。
本発明はこれらの欠点を除くため可変容量ダイオードを
用いずに発振周波数に対して制御特性の直線性がよく変
化幅がひろく、又集積回路化するに容易な回路の電圧制
御発振器を構成するものである。can be changed by the control input voltage, so the oscillation frequency can be changed. As mentioned above, conventional voltage controlled oscillators using a resonant circuit composed of a coil and a capacitor have used variable capacitance diodes to change the oscillation frequency.
However, this circuit configuration requires a large capacitance change width of the variable capacitance diode, linearity of the capacitance change with respect to the control width, and Q characteristics as a tuning capacitor, which increases the cost and makes it difficult to integrate the circuit. There was a drawback in the structure.
In order to eliminate these drawbacks, the present invention constructs a voltage controlled oscillator with a circuit that has good linearity of control characteristics with respect to the oscillation frequency, has a wide variation range, and is easy to integrate into an integrated circuit without using a variable capacitance diode. It is.
本発明を図面を用いて説明する。The present invention will be explained using the drawings.
第２図に示すように、それぞれベースをコレクタに互い
に接続したトランジスタ１，２のェミッタを共通接続し
て可変電流源１２に接続する。As shown in FIG. 2, the emitters of transistors 1 and 2, each having its base connected to its collector, are commonly connected and connected to a variable current source 12.
トランジスタ１のコレクタは直接電源端子４に接続し、
トランジスタ２のコレクタはコイル５とコンデンサ６か
らなる並列共振回路を通して電源様子４に接続する。可
変電流源１２の大きさは制御入力端子１０からの入力に
よって変化できる。次にこの回路の発振周波数が可変電
流源１２の電流値に依在することを示す。第３図は第２
図に示される発振回路の発振周波数を計算するための等
価回路図であって、それぞれベースをコレクタに互いに
接続し共通ヱミッタ接続したトランジスタ１，２をハイ
ブリッド汀形等価回路で表わしている。The collector of transistor 1 is directly connected to power supply terminal 4,
The collector of the transistor 2 is connected to the power source 4 through a parallel resonant circuit consisting of a coil 5 and a capacitor 6. The magnitude of variable current source 12 can be changed by input from control input terminal 10. Next, it will be shown that the oscillation frequency of this circuit depends on the current value of the variable current source 12. Figure 3 is the second
This is an equivalent circuit diagram for calculating the oscillation frequency of the oscillation circuit shown in the figure, in which transistors 1 and 2 whose bases are connected to each other and their collectors are connected to a common emitter are represented as a hybrid type equivalent circuit.
端子１３，１４および１５はそれぞれトランジスタ１の
コレクタ、ベースおよびェミッタ端子に相当し、端子１
６，１７および１８はそれぞれトランジスタ２のコレク
タ、べ−スおよびェミッタ端子に相当する。又、トラン
ジスターおよび２のベース抵抗は等価抵抗１９および２
０、入力抵抗は等価抵抗２１および２２で示され、ヱミ
ッタ、ベース接合の空乏層容量は等価容量２３および２
４、ェミッタ拡散容量は等価容量２５および２６、コレ
クタ、ベース接合の空乏層容量は等価容量２７および２
８、従属電源は２９および３０でそれぞれ示す。定常発
振時にはループ利得が１と小さく又コレクタ、ベース接
合の空乏層容量２７および２８は小さいので同容量は無
視できる。Terminals 13, 14 and 15 correspond to the collector, base and emitter terminals of transistor 1, respectively;
6, 17 and 18 correspond to the collector, base and emitter terminals of transistor 2, respectively. Also, the base resistances of transistors and 2 are equivalent resistances 19 and 2.
0, the input resistance is shown by the equivalent resistances 21 and 22, and the depletion layer capacitance of the emitter and base junctions is shown by the equivalent capacitances 23 and 2.
4. The emitter diffusion capacitance is equivalent capacitance 25 and 26, and the collector and base junction depletion layer capacitance is equivalent capacitance 27 and 2.
8, auxiliary power supplies are shown at 29 and 30, respectively. During steady oscillation, the loop gain is as small as 1, and the depletion layer capacitances 27 and 28 at the collector and base junctions are small, so they can be ignored.
又、回路の対称性より第３図を書き直すと等価回路第４
図を得る。ここでトランジスター，２のコレクタ間のイ
ンピーダンスを求めると享Ｊ再三正十ｉ２竹に十リ十声
髪芸≦Ｃ裏叢ヂ十峯音声牢舎叢壱言ｂ岸≦拳藷ｒｂ２
‐‐‐■ただし、ｆＴ》のＺ ：トランジ
スター，２のコレクタ間のインピーダンス・Ｌ：コイル
５のインピーダンス、
Ｃ ：コンデンサ６の容量、
Ｃｂ： 等価容量２３と等価容量２５の容量の和、二等
価容量２４と等価容量２６の容量
の和、
ｒｂ：等価抵抗１９，２０の値、
ｒ打：等価抵抗２１，２２の値、
ｆＴ：ｉ８！＝１となる周波数、
Ｂ ：ェミッタ接地電流増幅率。Also, based on the symmetry of the circuit, if we rewrite Figure 3, we get the equivalent circuit No. 4.
Get the picture. Here, find the impedance between the collectors of transistor and 2.
‐‐‐■ However, fT》Z: Impedance between the collectors of transistor and 2, L: Impedance of coil 5, C: Capacity of capacitor 6, Cb: Sum of capacitances of equivalent capacitance 23 and equivalent capacitance 25, two equivalents. Sum of capacitances of capacitance 24 and equivalent capacitance 26, rb: Value of equivalent resistances 19 and 20, r stroke: Value of equivalent resistances 21 and 22, fT: i8! = 1 frequency, B: Emitter grounded current amplification factor.
発振周波数においてＺは位相角零の純抵抗となるので（
Ｚの虚数部）＝０とおいて｛３１式を得る。At the oscillation frequency, Z becomes a pure resistance with zero phase angle, so (
Assuming that the imaginary part of Z)=0, {31 equation is obtained.
１ ４汀ｆＯＳＣＣｂ
ｒ灯２布滝左＝２汀ｆｏｓＣＣ十（公汀十あげ十，６竹
２的ｓＣｃ絡げ２ｒｂ２
…｛３｝これより発振周波数が求まって位ｓｃ：発
振周波数、ｋ：ボルッマン定数、ｑ：電子の電荷、Ｔ：
絶体温度、ｌｏ：可変電流源１ ２の電流の大きさただ
し、ｆ，》幻ｓｃ、Ｃ》Ｃｂ、ｒ汀》ｒｂ。1 4 fOSCCb
r light 2 futaki left = 2 fosCC 10
...{3} From this, the oscillation frequency can be found. sc: oscillation frequency, k: Bormann constant, q: electron charge, T:
Absolute temperature, lo: magnitude of current of variable current sources 1 and 2, where f,》phantom sc, C》Cb, r 》rb.
となる。上記■式は可変電流源１２の電流の大きさｌｏ
を変えることによって発振周波数を変化できることを示
している。以上説明したように本発明によれば可変電流
源１２の電流の大きさを変化させることによって発振周
波数を変化させられるので可変容量ダイオードを用いな
くてよいため集積回路化しやすい効果がある。becomes. The above formula (■) is the magnitude of the current of the variable current source 12 lo
This shows that the oscillation frequency can be changed by changing . As explained above, according to the present invention, since the oscillation frequency can be changed by changing the magnitude of the current of the variable current source 12, there is no need to use a variable capacitance diode, which has the effect of facilitating integration into an integrated circuit.
又‘４’式に示されるように発振周波数の変化は可変電
流源１２の電流の大きさｌｏに比例するので発振周波数
の制御特性の直線性をよくする効果がある。以上のよう
に優れた特長をもっているので本発明を位相同期回路の
電圧制御発振器として用いてＦＭ検波もしくはＰＭ検波
させると検波歪が小さい検波回路が実現できる。Further, as shown in equation '4', the change in the oscillation frequency is proportional to the magnitude lo of the current of the variable current source 12, which has the effect of improving the linearity of the control characteristic of the oscillation frequency. Because of the excellent features described above, when the present invention is used as a voltage controlled oscillator in a phase-locked circuit for FM detection or PM detection, a detection circuit with small detection distortion can be realized.
第５図は本発明の具体的な一実施例の回路接続図である
。FIG. 5 is a circuit connection diagram of a specific embodiment of the present invention.
それぞれベースをコレクタに互いに接続した、トランジ
スタ１，２のェミッタを共通接続してトランジスタ３０
のコレクタに接続する。A transistor 30 is formed by connecting the emitters of transistors 1 and 2 in common, with their bases connected to their collectors.
Connect to the collector of
トランジスタ１のコレク外ま直接電源端子４へ接続しト
ランジスタ２のコレクタはコイル５とコンデンサ６で構
成する並列共振回路のコイルに中間接続点を設けて接続
し並列共振回路の１端は電源端子４に後続する。トラン
ジスタ３１のベースは制御入力端子１０に接続しェミツ
タは抵抗３２を通してＧＮＤ端子９に接続する。トラン
ジスタ３３のベースをトランジスタ２のコレクタに、コ
レクタを電源端子４にェミッタを出力端子３４にそれぞ
れ接続するとともにェミッタを抵抗３５を通してＧＮＤ
端子９に接続する。The outside of the transistor 1 is directly connected to the power supply terminal 4, and the collector of the transistor 2 is connected to the coil of a parallel resonant circuit composed of a coil 5 and a capacitor 6 with an intermediate connection point, and one end of the parallel resonant circuit is connected to the power supply terminal 4. followed by The base of the transistor 31 is connected to the control input terminal 10, and the emitter is connected to the GND terminal 9 through a resistor 32. The base of the transistor 33 is connected to the collector of the transistor 2, the collector is connected to the power supply terminal 4, the emitter is connected to the output terminal 34, and the emitter is connected to GND through the resistor 35.
Connect to terminal 9.
第５図に示す本例は位相同期回路の電圧制御発振器とし
て用いた例であって可変周波数幅がひろがりすぎるのを
さげるため共振回路のコイル５に中間接続点を設けて用
いている。コイル５の全体に対して中間点までの巻数比
が１：ｍであるとすると等価的に同調容量が１／〆倍に
なるため発振周波数は（〇＜ｍ＜・）
１３，：トランジスタ３１のコレクタ電流となって発振
周波数変化は【４ー式に比較しめ倍に小さくなっている
。The present example shown in FIG. 5 is an example of use as a voltage controlled oscillator in a phase-locked circuit, and in order to prevent the variable frequency width from becoming too wide, an intermediate connection point is provided in the coil 5 of the resonant circuit. If the turns ratio of the entire coil 5 up to the midpoint is 1:m, the tuning capacitance will equivalently be 1/〆 times, so the oscillation frequency will be (〇<m<・) 13,: of the transistor 31. The change in the oscillation frequency due to the collector current is twice as small as that in formula 4.
第６図に示すのは本発明の具体的な他の実施例であって
上記実施例とは抵抗３６，３７がそれぞれトランジスタ
１，２のェミッタに接続された点が異なっている。FIG. 6 shows another specific embodiment of the present invention, which differs from the embodiment described above in that resistors 36 and 37 are connected to the emitters of transistors 1 and 2, respectively.
この場合の発振周波数は抵抗３６および３７の抵抗値を
Ｒｅで表わすと、となる。The oscillation frequency in this case is expressed by the resistance values of the resistors 36 and 37 expressed as Re.
この式はヱミッタに抵抗が入ったことにより発振周波数
のトランジスタ３１のコレクタ電流に対する依存性が小
さくなることを示しているが反面トランジスタ１，２の
パラメータのバラッキに対して発振器の特性がバラック
のを押さえる効果がある。This equation shows that the dependence of the oscillation frequency on the collector current of transistor 31 becomes smaller due to the inclusion of a resistor in the emitter. It has a suppressing effect.
第１図は従来の電圧制御発振器を説明する回路接続図、
第２図は本発明の一実施例の回路接続図、第３図は前記
実施例の発振周波数を求める等価回路図、第４図は第３
図の等価回路図、第５図は本発明の具体的な一実施例を
示す回路接続図、第６図は本発明の他の実施例を示す回
路接続図である。
１，２，３１，３３……トランジスタ、３……電流源、
４・・・・・・電源端子、５・・・・・・コイル、６，
７．．・．．・コンデンサ、８・・・・・・可変容量ダ
イオード、９…・・・ＧＮＤ端子、１ ０・・・・・・
制御入力端子、１ １，３２，３５，３６，３７・・・
・・・抵抗、１２・・・・・・可変電流源、１３，１６
・・・・・・コレクタ端子、１４，１７・…・・ベース
端子、１５，１８…・・・ェミッタ端子、１９，２０，
２１，２２・・・…等価抵抗、２３，２４，２５，２６
，２７，２８・・・・・・等価容量、２９，３０・・・
・・・従属電流源、３４…・・・出力端子。
弟′図
鰐２図
鶏３図
鰐ィ図
努づ図
第６図Figure 1 is a circuit connection diagram explaining a conventional voltage controlled oscillator.
FIG. 2 is a circuit connection diagram of an embodiment of the present invention, FIG. 3 is an equivalent circuit diagram for determining the oscillation frequency of the embodiment, and FIG.
5 is a circuit connection diagram showing a specific embodiment of the present invention, and FIG. 6 is a circuit connection diagram showing another embodiment of the present invention. 1, 2, 31, 33...transistor, 3...current source,
4...Power terminal, 5...Coil, 6,
7. ．．・．． ．．・Capacitor, 8...Variable capacitance diode, 9...GND terminal, 1 0...
Control input terminal, 1 1, 32, 35, 36, 37...
...Resistance, 12...Variable current source, 13, 16
......Collector terminal, 14,17...Base terminal, 15,18...Emitter terminal, 19,20,
21, 22...Equivalent resistance, 23, 24, 25, 26
, 27, 28... Equivalent capacity, 29, 30...
...Dependent current source, 34...Output terminal. Younger brother's picture, crocodile, 2, chicken, 3, crocodile, figure 6, figure 6
Claims (1)
スが他方のコレクタに他方のベースが一方のコレクタに
それぞれ接続された第１および第２のトランジスタと、
前記第１および第２のトランジスタのコレクタ間に接続
された共振回路と、前記第１および第２のトランジスタ
のエミツタ結合点に接続された電流源とを有し、前記電
流源の電流値を制御信号に応答して制御することにより
発振周波数を制御することを特徴とする電圧制御発振器
。1 first and second transistors whose emitters are coupled to each other, whose bases are connected to the collectors of the other, and whose bases are connected to the collectors of the other;
a resonant circuit connected between the collectors of the first and second transistors; and a current source connected to the emitter coupling point of the first and second transistors, and controls the current value of the current source. A voltage controlled oscillator characterized in that the oscillation frequency is controlled by controlling in response to a signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52147542A JPS6022845B2 (en) | 1977-12-07 | 1977-12-07 | voltage controlled oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52147542A JPS6022845B2 (en) | 1977-12-07 | 1977-12-07 | voltage controlled oscillator |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7796386A Division JPS61256803A (en) | 1986-04-04 | 1986-04-04 | Voltage controlled oscillator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5479547A JPS5479547A (en) | 1979-06-25 |
| JPS6022845B2 true JPS6022845B2 (en) | 1985-06-04 |
Family
ID=15432666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52147542A Expired JPS6022845B2 (en) | 1977-12-07 | 1977-12-07 | voltage controlled oscillator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6022845B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3003302C2 (en) * | 1980-01-30 | 1982-12-23 | Siemens AG, 1000 Berlin und 8000 München | Current controlled oscillator |
| JPS5921927Y2 (en) * | 1980-04-16 | 1984-06-30 | 豊和工業株式会社 | Vehicle air conditioner |
| JPS5814604A (en) * | 1981-07-20 | 1983-01-27 | Sanyo Electric Co Ltd | Am modulating circuit |
-
1977
- 1977-12-07 JP JP52147542A patent/JPS6022845B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5479547A (en) | 1979-06-25 |
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