JPH02168705A - Voltage controlled oscillating circuit - Google Patents

Voltage controlled oscillating circuit

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Publication number
JPH02168705A
JPH02168705A JP27700889A JP27700889A JPH02168705A JP H02168705 A JPH02168705 A JP H02168705A JP 27700889 A JP27700889 A JP 27700889A JP 27700889 A JP27700889 A JP 27700889A JP H02168705 A JPH02168705 A JP H02168705A
Authority
JP
Japan
Prior art keywords
collector
transistor
voltage
oscillating
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP27700889A
Other languages
Japanese (ja)
Other versions
JPH0812976B2 (en
Inventor
Tomomasa Nakagawara
智賢 中川原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP1277008A priority Critical patent/JPH0812976B2/en
Publication of JPH02168705A publication Critical patent/JPH02168705A/en
Publication of JPH0812976B2 publication Critical patent/JPH0812976B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE:To obtain the variable range of sufficient oscillating frequencies by means of a small current by changing the oscillating frequencies with changing the bias current of an oscillating transistor(TR), and controlling the voltage between collector bases of the oscillating TR. CONSTITUTION:A control TR forming a differential pair with a control TR3 is made into a TR40 in a double collector shape, respective collectors are connected to the bases of TRs 1 and 2, and resistances 14 and 15 are inserted to feedback paths 11 and 12. In such a constitution, when the voltage value of a controlled voltage source 8 is increase, for example, in order to increase the oscillating frequencies, the collector current of the TR40 is increased, and the voltage value between the collector bases of the both oscillating TRs 1 and 2 is increased. Thus, the base voltage between the respective TRs 1 and 2 is increased, and the capacity value of the collector bases is decreased. The oscillating frequencies are determined by a resonance circuit consisting of a capacitor 9 and an inductor 10, in addition the contribution of the capacity between the collector bases is large, and by decreasing the capacity value, the oscillating frequencies is increased.

Description

【発明の詳細な説明】 換回路等に用いられる電圧制御形発振回路に関する。[Detailed description of the invention] This invention relates to voltage-controlled oscillation circuits used in switching circuits, etc.

(従来の技術) 従来より電圧制御形発振回路は種々のものがある。その
中でIC化に適し、かつ高周波での発振が可能な一例と
しては米国特許節3,963.99fi号公報記載のも
のがある。これを第5図に示す。
(Prior Art) There have been various types of voltage controlled oscillator circuits. Among them, one example that is suitable for IC implementation and capable of oscillating at high frequencies is the one described in US Patent No. 3,963.99fi. This is shown in FIG.

トランジスタ12はエミッタが共通接続され差動対を成
す発振トランジスタである。これらトランジスタ1,2
のコレクタ間にはコンデンサ9とインダクタ10から成
る共振回路が接続されている。また前記トランジスタ1
,2の各々のベースは帰還路11.12を介して他方の
トランジスタのベースに接続される。さらに前記共通エ
ミッタは電流源7に接続されると共に、制御用トランジ
スタ3のコレクタに接続される。制御用トランジスタ3
は同じく制御用l・ランジスタ4とエミッタを共通とし
これらは差動対を成している。トランジスタ3,4の共
通エミッタは電流源6に接続され、またトランジスタ4
のコレクタは前記トランジスタ2のベースに接続される
The transistors 12 are oscillation transistors whose emitters are commonly connected and form a differential pair. These transistors 1, 2
A resonant circuit consisting of a capacitor 9 and an inductor 10 is connected between the collectors of the . Further, the transistor 1
, 2 is connected to the base of the other transistor via a feedback path 11.12. Furthermore, the common emitter is connected to the current source 7 and to the collector of the control transistor 3. Control transistor 3
Similarly, the control l transistor 4 and the emitter are common, and these form a differential pair. The common emitters of transistors 3 and 4 are connected to a current source 6 and transistor 4
The collector of is connected to the base of the transistor 2.

上述のように構成される発振回路は、トランジスタ3,
4のベース間に接続される制御電圧源8により印加され
る電圧値を変化させることにより、発振周波数を可変と
するものである。この従来回路は、上記印加電圧を変化
させても出力バイアスが一定であり、次段に増幅回路等
を付加する際に却って好ましくはなく、例えば従来回路
を復調回路に適用した場合に、他の周波数に同調発振し
、誤って復調を行なうという誤動作を生じるものでもの
で、比較的低電流でも発振周波数の可変範囲が広く、か
つ制御特性の直線性が良好な電圧制御しかしながら、第
5図に示す従来回路は、その発振周波数の可変範囲が基
本的には電流源6の電流値によって決定される。したが
って、可変範囲を大きくする必要がある場合には、電流
源6の電流値を大きくしなければならない。これはIC
化を考えると消費電力の増大とそれに伴なう温度上昇と
いう好ましくない事態を招く。
The oscillation circuit configured as described above includes transistors 3,
The oscillation frequency is made variable by changing the voltage value applied by a control voltage source 8 connected between the bases of 4. In this conventional circuit, the output bias remains constant even when the applied voltage is changed, which is not preferable when adding an amplifier circuit etc. to the next stage.For example, when applying the conventional circuit to a demodulation circuit, it is difficult to This causes malfunctions such as oscillation tuned to the frequency and erroneous demodulation.However, voltage control, which has a wide variable range of oscillation frequency even at relatively low currents, and has good linearity of control characteristics, is not ideal as shown in Figure 5. In the conventional circuit, the variable range of the oscillation frequency is basically determined by the current value of the current source 6. Therefore, if it is necessary to increase the variable range, the current value of the current source 6 must be increased. This is an IC
Considering this, an undesirable situation arises in that power consumption increases and the temperature rises accordingly.

また、所望の可変範囲内で制御特性の直線性を改善した
い場合には、やはり電流源6の電流値を増大させればよ
いか、これを行なうと先の問題が同様に発生すると共に
、所望の可変範囲外においても直線性かそのまま維持さ
れてしまう。これは発振トランジスタのバイアス電流を
変化させて発振周波数を変化させるとともに」1記発振
トランジスタのコレクタ・ベース間電圧を制御させるも
のである。
Also, if you want to improve the linearity of the control characteristics within the desired variable range, you should just increase the current value of the current source 6. If you do this, the above problem will occur as well, and the desired Even outside the variable range, linearity is maintained as is. This changes the bias current of the oscillation transistor to change the oscillation frequency and also controls the collector-base voltage of the oscillation transistor.

(作用) 上記コレクタ・ベース間電圧を制御させると、発振トラ
ンジスタのコレクタ・ベース間容量が変化する。前記容
量変化は、発振周波数を変化させることに寄与するため
、従来に比べ少ない電流ても十分な発振周波数の可変範
囲を得ることが可能となる。
(Function) When the collector-base voltage is controlled, the collector-base capacitance of the oscillation transistor changes. Since the capacitance change contributes to changing the oscillation frequency, it is possible to obtain a sufficient variable range of the oscillation frequency even with a smaller current than in the past.

の容量値が減少することにより、発振周波数は高と異な
る点は、制御用トランジスタ3と差動対を成す制御用ト
ランジスタをダブルコレクタ形のトランジスタ40とし
、各コレクタをそれぞれトランジスタ12のベースに接
続した点及び帰還路11゜12中にそれぞれ抵抗14.
15を挿入した点である。
The difference between the oscillation frequency and the high oscillation frequency due to the decrease in the capacitance value is that the control transistor forming a differential pair with the control transistor 3 is a double collector type transistor 40, and each collector is connected to the base of the transistor 12. Resistors 14.
This is the point where 15 was inserted.

この構成によれば、例えば発振周波数を高めるべく制御
電圧源8の電圧値を増加させた場合、トランジスタ40
のコレクタ電流が増加し、発振トランジスタ1,2の双
方間のコレクタ・ベース間電圧の値が拡大する。これに
より、抵抗14.15において発生する電圧、すなわち
各トランジスタ1゜2のベース電圧が増し、各トランジ
スタ1,2のコレクタ・ベース間容量の値が減少する。
According to this configuration, for example, when the voltage value of the control voltage source 8 is increased in order to increase the oscillation frequency, the transistor 40
The collector current of oscillation transistors 1 and 2 increases, and the value of the collector-base voltage between both oscillation transistors 1 and 2 increases. As a result, the voltage generated at the resistor 14, 15, that is, the base voltage of each transistor 1.2 increases, and the value of the collector-base capacitance of each transistor 1, 2 decreases.

発振周波数はコンデンサ9とインダクタIOとにより構
成される共振回路により決定されるが、実質的には上記
コレクタ・ベース間容量の寄与も大きく、そ波数を高め
る場合、制御電圧源8を操作して従来と同様にトランジ
スタ3のコレクタ電流を減少させると共に、これに加え
て発振トランジスタ1゜2のコレクタ・ベース間容量を
減小させるため、発振周波数の変化を大きくすることが
でき、電流源6の電流値を低く設定しても十分な可変範
囲を直線性良く得ることができる。
The oscillation frequency is determined by the resonant circuit constituted by the capacitor 9 and the inductor IO, but substantially the collector-base capacitance has a large contribution, and when increasing the frequency, the control voltage source 8 must be operated. As in the conventional case, the collector current of the transistor 3 is reduced, and in addition, the capacitance between the collector and base of the oscillation transistor 1゜2 is reduced, so the change in the oscillation frequency can be increased, and the current source 6 is Even if the current value is set low, a sufficient variable range can be obtained with good linearity.

なお、トランジスタ3と差動対を成す制御用トランジス
タのコレクタ電流を分割する方法としては、ダブルコレ
クタ形トランジスタ40を採用する差動回路5とする他
、第2図に示す如き差動回路50としてもよい。すなわ
ち、分割用のトランジスタ42.43を用意し、これら
のベースに一定の直流電圧44を印加すると共に、エミ
ッタを共通として制御用トランジスタ41のコレクタに
接続するのである。こうして制御用トランジスタ41の
コレクタ電流をトランジスタ42.48により分割し、
各トランジスタ41..42のコレクタを前記発振用ト
ランジスタ12のベースに接続することで、第1図の回
路と同様の機能を発揮させることができる。なお、第2
図の回路形式によれば、分割用トランジスタ42.43
の各エミッタに抵抗を接続することができ、これにより
」1記トランジスタ42.43のベス・エミッタ間電圧
のばらつきによる電流分割のばらつきを抑えることかで
きる。
In addition, as a method of dividing the collector current of the control transistor forming a differential pair with the transistor 3, in addition to using the differential circuit 5 that employs a double collector type transistor 40, it is also possible to use a differential circuit 50 as shown in FIG. Good too. That is, dividing transistors 42 and 43 are prepared, a constant DC voltage 44 is applied to their bases, and their emitters are commonly connected to the collector of the control transistor 41. In this way, the collector current of the control transistor 41 is divided by the transistors 42 and 48,
Each transistor 41. .. By connecting the collector of 42 to the base of the oscillation transistor 12, the same function as the circuit shown in FIG. 1 can be achieved. In addition, the second
According to the circuit format shown in the figure, the dividing transistor 42.43
A resistor can be connected to each emitter of the transistors 42 and 43, thereby suppressing variations in current division due to variations in the voltages between the bases and emitters of the transistors 42 and 43.

また、帰還路1.1.、12中に挿入される抵抗14.
15はダイオードに置き換えることも可能である。この
ときにはダイオードで発生する電圧は、多少の電流変動
に対しては一定であるため、安定した発振周波数を得る
ことができる。
Also, return route 1.1. , 12, a resistor 14.
15 can also be replaced with a diode. At this time, since the voltage generated by the diode remains constant despite slight current fluctuations, a stable oscillation frequency can be obtained.

さらに、第1図に示す発振回路においては、発振トラン
ジスタ1,2のコレクタ電流路に抵抗を挿入することに
より、これらトランジスタ双方のコレクタ・ベース間電
圧を広げることができ、なお−層の発振周波数の可変範
囲の拡大を図ることが可能である。また、上記コレクタ
電流路に挿入される抵抗はダイオードに置換することが
できる。
Furthermore, in the oscillation circuit shown in Fig. 1, by inserting a resistor into the collector current path of the oscillation transistors 1 and 2, it is possible to widen the voltage between the collector and base of both of these transistors, and the oscillation frequency of the -layer can be increased. It is possible to expand the variable range of. Further, the resistor inserted in the collector current path can be replaced with a diode.

この例を第3図に示す。An example of this is shown in FIG.

第3図に示す電圧制御形発振回路は、制御用差動回路と
して第2図に示した形式の差動回路51を用い、発振ト
ランジスタ12のコレクタ電流路にはダイオードを複数
縦接続したダイオード直列回路16.17が各々挿入さ
れている。ダイオードの両端電圧は1個当り約−2mV
/’Cの負の温度係数を有している。したがって、上記
ダイオード直列回路16.17を用いることにより、温
度上昇に伴ない発振周波数が高い方へ推移する現象を補
償し、発振周波数の安定化を図ることができる。
The voltage controlled oscillator circuit shown in FIG. 3 uses a differential circuit 51 of the type shown in FIG. Circuits 16 and 17 are inserted respectively. The voltage across each diode is approximately -2mV per diode.
It has a negative temperature coefficient of /'C. Therefore, by using the diode series circuits 16 and 17, it is possible to compensate for the phenomenon in which the oscillation frequency shifts toward higher levels as the temperature rises, and to stabilize the oscillation frequency.

今迄説明してきた実施例は帰還路11.12が直結形で
構成された例であるが、第4図に容量帰還形のものを示
す。直結形と異なる主要な点は、帰還路11.12中に
コンデンサ3o、 31が挿入されている点、制御用ト
ランジスタ4のコレクタ電流を分割するためそのコレク
タと発振トランジスタ1,2のベース間に各々ベースバ
イアス用抵抗27.28が設けられている点、さらに上
記発振トランジスタ1.2のコレクタ間に中点電位用抵
抗32.33が直列接続され、その中点にベースが接続
されるトランジスタ34を備え、このトランジスタ34
のエミッタと制御用トランジスタ4のコレクタ間には抵
抗29が接続されている点である。
The embodiments described so far are examples in which the feedback paths 11 and 12 are of the direct connection type, but FIG. 4 shows a capacitive feedback type. The main difference from the direct connection type is that capacitors 3o and 31 are inserted in the feedback path 11 and 12, and in order to divide the collector current of the control transistor 4, between the collector and the bases of the oscillation transistors 1 and 2. A base bias resistor 27, 28 is provided respectively, and a midpoint potential resistor 32, 33 is connected in series between the collectors of the oscillation transistor 1.2, and the base of the transistor 34 is connected to the midpoint of the resistor 32, 33. and this transistor 34
A resistor 29 is connected between the emitter of the control transistor 4 and the collector of the control transistor 4.

」1記のトランジスタ84は発振トランジスタ1゜2の
ベースに印加されるバイアスを可変とするもので、これ
らトランジスタ1,2のコレクタ・ベス間電圧は上記抵
抗29の両端電圧により変化す回路の構成図である。
The transistor 84 shown in No. 1 makes the bias applied to the base of the oscillation transistor 1゜2 variable, and the voltage between the collector and base of these transistors 1 and 2 changes depending on the voltage across the resistor 29. It is a diagram.

1、 2. 3.34,40.41,42.43・・・
トランジスタ、8・・・制御電圧源、  9.30.3
1・・・コンデンサ、10・・・インダクタ、 11.
 12・・・帰還路、14、1.5・・・抵抗。
1, 2. 3.34, 40.41, 42.43...
Transistor, 8... Control voltage source, 9.30.3
1... Capacitor, 10... Inductor, 11.
12... Return path, 14, 1.5... Resistance.

Claims (1)

【特許請求の範囲】[Claims] エミッタを共通接続して差動対を成す第1、第2のトラ
ンジスタと、この第1、第2のトランジスタの各出力間
に接続した共振回路と、前記第1、第2のトランジスタ
のうち少なくとも一方のトランジスタの出力を他方のト
ランジスタの入力に接続した帰還路と、前記第1、第2
のトランジスタのエミッタに接続した該第1、第2のト
ランジスタのエミッタ電流を可変する可変電流手段と、
前記帰還路間に前記第1、第2のトランジスタのコレク
タ・ベース間電圧を制御する制御手段とからなることを
特徴とする電圧制御形発振回路。
A first and second transistor whose emitters are commonly connected to form a differential pair, a resonant circuit connected between each output of the first and second transistors, and at least one of the first and second transistors. a feedback path connecting the output of one transistor to the input of the other transistor;
variable current means for varying the emitter currents of the first and second transistors connected to the emitters of the transistors;
A voltage controlled oscillation circuit comprising: control means for controlling collector-base voltages of the first and second transistors between the feedback paths.
JP1277008A 1989-10-26 1989-10-26 Voltage controlled oscillator Expired - Lifetime JPH0812976B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1277008A JPH0812976B2 (en) 1989-10-26 1989-10-26 Voltage controlled oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1277008A JPH0812976B2 (en) 1989-10-26 1989-10-26 Voltage controlled oscillator

Publications (2)

Publication Number Publication Date
JPH02168705A true JPH02168705A (en) 1990-06-28
JPH0812976B2 JPH0812976B2 (en) 1996-02-07

Family

ID=17577476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1277008A Expired - Lifetime JPH0812976B2 (en) 1989-10-26 1989-10-26 Voltage controlled oscillator

Country Status (1)

Country Link
JP (1) JPH0812976B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2006095502A1 (en) * 2005-03-08 2008-08-14 日本電気株式会社 Voltage controlled oscillator and frequency control method for voltage controlled oscillator
US7605678B2 (en) 2004-01-13 2009-10-20 Murata Manufacturing Co., Ltd. Multiple-mode dielectric resonator, dielectric filter, and communication device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6035806A (en) * 1983-08-08 1985-02-23 Nec Corp Voltage control oscillator

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6035806A (en) * 1983-08-08 1985-02-23 Nec Corp Voltage control oscillator

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7605678B2 (en) 2004-01-13 2009-10-20 Murata Manufacturing Co., Ltd. Multiple-mode dielectric resonator, dielectric filter, and communication device
JPWO2006095502A1 (en) * 2005-03-08 2008-08-14 日本電気株式会社 Voltage controlled oscillator and frequency control method for voltage controlled oscillator

Also Published As

Publication number Publication date
JPH0812976B2 (en) 1996-02-07

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