JPH0329322B2 - - Google Patents
Info
- Publication number
- JPH0329322B2 JPH0329322B2 JP59125325A JP12532584A JPH0329322B2 JP H0329322 B2 JPH0329322 B2 JP H0329322B2 JP 59125325 A JP59125325 A JP 59125325A JP 12532584 A JP12532584 A JP 12532584A JP H0329322 B2 JPH0329322 B2 JP H0329322B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- diode
- capacitor
- oscillation
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000010355 oscillation Effects 0.000 claims description 41
- 239000003990 capacitor Substances 0.000 claims description 22
- 230000000903 blocking effect Effects 0.000 claims description 9
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 230000003321 amplification Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
- H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Description
【発明の詳細な説明】 〔発明の技術分野〕 この発明は電圧制御型発振回路に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to a voltage controlled oscillation circuit.
第５図は従来より周知となつている発振回路の
一基本構成例を示したものであり、異なるトラン
ジスタのコレクタとベースとがそれぞれ結合、す
なわち正帰還となるように接続されたトランジス
タ１１，１２およびこの回路の共振負荷を形成す
るコイル１３、コンデンサ１４、さらに前記の発
振トランジスタ対の共通エミツタと基準電位間に
接続された可変電流源１５とからなつている。ま
た前記共振負荷への直流バイアスは電源１６より
抵抗器１７，１８を介して供給される。この発振
回路における発振周波数は、電流源１５の供給す
る電流を変化させることにより可変となる。
FIG. 5 shows an example of the basic configuration of a conventionally well-known oscillation circuit, in which transistors 11 and 12 are connected so that the collectors and bases of different transistors are coupled, that is, in a positive feedback manner. The circuit also includes a coil 13, a capacitor 14, and a variable current source 15 connected between the common emitter of the oscillating transistor pair and a reference potential, which form a resonant load of this circuit. Further, a DC bias to the resonant load is supplied from a power supply 16 via resistors 17 and 18. The oscillation frequency in this oscillation circuit can be varied by changing the current supplied by the current source 15.
上述の電圧制御型発振回路は、価格の高いバラ
クタダイオードを使用しない構成となつているた
め、低コストで回路実現が可能であり、特に集積
回路とした場合にその効果が大きい。しかしなが
ら、発振周波数の可変範囲や直線性については十
分でなく、広い可変範囲や十分な直線性が要求さ
れる用途には使用することができなかつた。 Since the voltage-controlled oscillation circuit described above does not use an expensive varactor diode, the circuit can be realized at low cost, and the effect is particularly great when it is implemented as an integrated circuit. However, the variable range and linearity of the oscillation frequency were not sufficient, and it could not be used for applications that required a wide variable range and sufficient linearity.
この発明は、上述した従来の問題点に鑑みなさ
れたものであり、広い可変範囲と良好な直線性を
有する電圧制御型発振回路を実現することを目的
とする。
The present invention was made in view of the above-mentioned conventional problems, and an object of the present invention is to realize a voltage-controlled oscillation circuit having a wide variable range and good linearity.
この発明はダイオード接続したトランジスタを
直流阻止用コンデンサを介して共振負荷に接続
し、このトランジスタをそのコレクタ電流によつ
て制御される可変インピーダンス素子として動作
させ、以つて発振周波数を可変とする電圧制御型
発振回路を提供するものである。
This invention connects a diode-connected transistor to a resonant load via a DC blocking capacitor, operates this transistor as a variable impedance element controlled by its collector current, and uses voltage control to vary the oscillation frequency. oscillation circuit.
以下この発明の一実施例を図面を参照して詳細
に説明する。第１図は本発明の一実施例を示した
ものである。図中第５図と同一部分には同一番号
を付している。図において発振トランジスタ１
１，１２のエミツタは共通接続され固定電流源３
０に接続されており、コレクタはそれぞれ共振負
荷を形成するコイル１３、コンデンサ１４に接続
されると共にコンデンサ３３，３４を介してダイ
オード接続されたトランジスタ３１，３２のエミ
ツタに接続されている。またこの各トランジスタ
３１，３２のエミツタはそれぞれ可変電流源３
５，３６に接続されており、トランジスタ３１，
３２のコレクタおよびベースは直流バイアス１６
に接続されている。ここで前記コンデンサ３３，
３４は可変電流源３５，３６の供給する直流電流
がコイル１３、コンデンサ１４より形成される共
振負荷に流れ込むことを阻止するために付加され
るものである。
An embodiment of the present invention will be described in detail below with reference to the drawings. FIG. 1 shows an embodiment of the present invention. The same parts in the figure as in FIG. 5 are given the same numbers. In the figure, oscillation transistor 1
Emitters 1 and 12 are commonly connected to a fixed current source 3.
0, and its collectors are connected to a coil 13 and a capacitor 14 forming resonant loads, respectively, and are also connected via capacitors 33 and 34 to the emitters of diode-connected transistors 31 and 32. Further, the emitters of each of these transistors 31 and 32 are connected to the variable current source 3.
5, 36, and the transistors 31,
32 collector and base are DC biased 16
It is connected to the. Here, the capacitor 33,
Reference numeral 34 is added to prevent the direct current supplied by the variable current sources 35 and 36 from flowing into the resonant load formed by the coil 13 and the capacitor 14.
上述の構成による発振回路では、前記共振負荷
に直流阻止用コンデンサ３３，３４およびダイオ
ード接続のトランジスタ３１，３２が並列に接続
されており、発振周波数はこれら全体により規定
される共振周波数で決定される。この発振周波数
は可変電流源３５，３６の電流を変化させ、ダイ
オード接続のトランジスタ３１，３２のコレクタ
電流を制御し、そのインピーダンスを変化させる
ことにより可変となる。 In the oscillation circuit configured as described above, DC blocking capacitors 33 and 34 and diode-connected transistors 31 and 32 are connected in parallel to the resonant load, and the oscillation frequency is determined by the resonant frequency defined by all of these. . This oscillation frequency can be made variable by changing the currents of the variable current sources 35 and 36, controlling the collector currents of the diode-connected transistors 31 and 32, and changing their impedances.
第２図は本発明の他の一実施例を示したもの
で、第１図に示したものが差動型の電圧制御型発
振回路であるのに対し、第２図はクラツプ発振回
路を電圧制御型発振回路とした場合の例を示すも
のである。図において、クラツプ発振回路中の発
振トランジスタ２０のベースにはコイル１３、コ
ンデンサ１４よりなる共振負荷が接続されると共
に、直流阻止用コンデンサ３３を介してダイオー
ド接続のトランジスタ３１が接続されている。ま
たこのダイオード接続のトランジスタ３１のエミ
ツタは基準電位に接続され、そのコレクタおよび
ベースは可変電流源３５に接続されている。発振
周波数は前述の差動型電圧制御型発振回路と全く
同様に、可変電流源３５の電流を変化させ、ダイ
オード接続のトランジスタ３１のコレクタ電流を
制御し、そのインピーダンスを変化させることに
より可変とされるものである。 FIG. 2 shows another embodiment of the present invention. While the one shown in FIG. 1 is a differential voltage controlled oscillation circuit, FIG. This shows an example of a controlled oscillation circuit. In the figure, a resonant load consisting of a coil 13 and a capacitor 14 is connected to the base of an oscillation transistor 20 in the Clapp oscillation circuit, and a diode-connected transistor 31 is also connected via a DC blocking capacitor 33. The emitter of this diode-connected transistor 31 is connected to a reference potential, and its collector and base are connected to a variable current source 35. The oscillation frequency is made variable by changing the current of the variable current source 35, controlling the collector current of the diode-connected transistor 31, and changing its impedance, just as in the differential voltage-controlled oscillation circuit described above. It is something that
以上のように、本発明に係る電圧制御型発振回
路は、ダイオード接続のトランジスタを直流阻止
用コンデンサを介して共振負荷に付加し、これら
全てにより決定される共振周波数を直接変化させ
る方法で発振周波数を変化させている。したがつ
て、発振周波数の可変範囲は、共振負荷を形成す
るコンデンサと前記直流阻止用コンデンサの容量
値の比を調節することにより自由に設定すること
ができる。また、本発明においてはダイオード接
続されたトランジスタを可変インピーダンス素子
として用いており、その電流・インピーダンス変
換特性は、可変電流源の電流変化に対する発振周
波数の変化特性を直線的とする。
As described above, the voltage controlled oscillator circuit according to the present invention adds a diode-connected transistor to a resonant load via a DC blocking capacitor, and directly changes the resonant frequency determined by all of these components. is changing. Therefore, the variable range of the oscillation frequency can be freely set by adjusting the ratio of the capacitance values of the capacitor forming the resonant load and the DC blocking capacitor. Further, in the present invention, a diode-connected transistor is used as a variable impedance element, and its current/impedance conversion characteristics are such that the oscillation frequency changes linearly with respect to current changes of the variable current source.
以下、本発明の電圧制御型発振回路が広い可変
範囲と良好な直線性を有することを図面を参照し
て説明する。第３図は第１図に示した差動型の電
圧制御型発振回路の等価回路を示すものである。
この等価回路は第１図の電圧制御型発振回路が交
流的に平衡形構成であるため、半回路で示してあ
る。第３図中、第１図に相当する部分には同一番
号を付している。図において、電流源４１，４５
はそれぞれ電流値gm1v1、gm2v2の電圧制御電流
源であり、gm1は発振トランジスタ１１の相互コ
ンダクタンス、gm2はダイオード接続のトランジ
スタ３１の相互コンダクタンスを示す。また、抵
抗rπ、コンデンサCπ、およびコンデンサCμは
各々発振トランジスタ１１のベース・エミツタ間
抵抗、ベース・エミツタ間容量およびベース・コ
レクタ間容量を表わす。さらに抵抗rπ2、コンデ
ンサCπ2は各々ダイオード接続のトランジスタ３
１のベース・エミツタ間抵抗、ベース・エミツタ
間容量を表わし、Apは発振トランジスタ１１の
コレクタ側よりコンデンサ３３の方を見たときの
アドミタンスを表わしている。 Hereinafter, it will be explained with reference to the drawings that the voltage controlled oscillation circuit of the present invention has a wide variable range and good linearity. FIG. 3 shows an equivalent circuit of the differential voltage controlled oscillation circuit shown in FIG.
This equivalent circuit is shown as a half circuit because the voltage controlled oscillation circuit shown in FIG. 1 has an AC balanced configuration. In FIG. 3, parts corresponding to those in FIG. 1 are given the same numbers. In the figure, current sources 41, 45
are voltage-controlled current sources with current values gm 1 v 1 and gm 2 v 2 , respectively, where gm 1 represents the mutual conductance of the oscillation transistor 11, and gm 2 represents the mutual conductance of the diode-connected transistor 31. Further, a resistor rπ, a capacitor Cπ, and a capacitor Cμ represent the base-emitter resistance, base-emitter capacitance, and base-collector capacitance of the oscillation transistor 11, respectively. Furthermore, the resistor rπ 2 and capacitor Cπ 2 are each diode-connected transistor 3.
Ap represents the base-emitter resistance and base-emitter capacitance of 1, and Ap represents the admittance when looking at the capacitor 33 from the collector side of the oscillation transistor 11.
第３図の等価回路より発振条件を求めると、ル
ープ利得を１と置くことにより、
gm1＝１／rπ＋１／RL＋jω（2C＋2Cμ＋Cπ）
＋２／jωL＋Ap …(1)
となる。ここでRLは抵抗値、Ｃはコンデンサ１
４の容量値、Ｌはコレクタ１３のインダクタンス
値をそれぞれ示す。上記(1)式より、発振周波数は
Im〔jω（2C＋2Cμ＋Cπ）＋２／jωL＋Ap〕＝０…(2
)
を満たす角周波数ωとなる。（Im〔 〕は複素数
の虚部を表す。）
ここで、直流阻止用コンデンサ３３の容量値を
C1とすると、
Ap＝１／１／１／rπ2＋jωCπ2＋gm2＋jωC1 …(3)
となり、ダイオード抵抗のトランジスタ３１のコ
レクタ電流をIc、ベース・エミツタ間接合容量を
Cbe、電流増幅率をβ、電子のベース走行時間を
τFとすると、
gm2＝ｑ／kTIc …(4)
Cπ2＝Cbe＋ｑ／kTτFIc …(5)
rπ2＝kT／ｑ・β／Ic …(6)
となる。そこで(3)〜(6)式を(2)式に代入して解くこ
とにより、ダイオード接続のトランジスタ３１の
コレクタ電流Icをパラメータとした発振周波数を
求めることができる。 When the oscillation conditions are determined from the equivalent circuit in FIG. 3, by setting the loop gain to 1, gm 1 =1/rπ+1/R L +jω(2C+2Cμ+Cπ) +2/jωL+Ap (1). Here, R L is the resistance value, C is the capacitor 1
4 and L indicate the inductance value of the collector 13, respectively. From the above formula (1), the oscillation frequency is Im[jω(2C+2Cμ+Cπ)+2/jωL+Ap]=0...(2
) is the angular frequency ω that satisfies the following. (Im [ ] represents the imaginary part of a complex number.) Here, the capacitance value of the DC blocking capacitor 33 is
Assuming C 1 , Ap=1/1/1/rπ 2 +jωCπ 2 +gm 2 +jωC 1 …(3) where the collector current of the diode resistor transistor 31 is Ic, and the base-emitter junction capacitance is
Cbe, the current amplification factor is β, and the electron base transit time is τ F , gm 2 = q/kTIc …(4) Cπ 2 = Cbe+q/kTτ F Ic …(5) rπ 2 = kT/q・β/ Ic...(6) Therefore, by substituting equations (3) to (6) into equation (2) and solving it, the oscillation frequency can be determined using the collector current Ic of the diode-connected transistor 31 as a parameter.
第４図はこうして求めた制御電流（コレクタ電
流Ic）対発振周波数の関係を示す特性図である。
図中、特性曲線５１が第１図に示した本発明に係
る電圧制御型発振回路の特性を示し、特性曲線５
２は第５図に示した従来の電圧制御型発振回路の
特性を示す。一見して明らかなように、本発明を
実施した電圧制御型発振回路は、従来に比し、広
い可変範囲と良好な直線性を有している。 FIG. 4 is a characteristic diagram showing the relationship between the control current (collector current Ic) and the oscillation frequency obtained in this way.
In the figure, a characteristic curve 51 indicates the characteristics of the voltage controlled oscillation circuit according to the present invention shown in FIG.
2 shows the characteristics of the conventional voltage controlled oscillator circuit shown in FIG. As is obvious at first glance, the voltage controlled oscillation circuit embodying the present invention has a wider variable range and better linearity than the conventional one.
このように広い可変範囲と良好な直線性を得る
ことができるのは、共振負荷に直流阻止用コンデ
ンサを介してダイオード接続のトランジスタを付
加することによる。よつて、上記の説明では第１
図に示した差動型の電圧制御型発振回路を例とし
てその効果を明らかとしたが、第２図に示したク
ラツプ発振回路による電圧制御型発振回路におい
ても同様に第４図の特性曲線５１に示した発振周
波数特性を得ることができるものである。 Such a wide variable range and good linearity can be achieved by adding a diode-connected transistor to the resonant load via a DC blocking capacitor. Therefore, in the above explanation, the first
The effect was clarified by taking the differential type voltage controlled oscillator circuit shown in the figure as an example, but the characteristic curve 51 in FIG. It is possible to obtain the oscillation frequency characteristics shown in FIG.
以上説明してきたように、本発明によれば直線
性の優れた広い可変範囲を有する電圧制御型発振
回路を得ることができる。 As described above, according to the present invention, it is possible to obtain a voltage controlled oscillator circuit with excellent linearity and a wide variable range.
第１図は本発明の一実施例に係る電圧制御型発
振回路の構成図、第２図は本発明の他の実施例に
係る電圧制御型発振回路の構成図、第３図は第１
図に示した電圧制御型発振回路の等価回路図、第
４図は本発明の電圧制御型発振回路の発振周波数
特性図、第５図は従来の電圧制御型発振回路の基
本的構成図である。
１１，１２，２０…発振トランジスタ、１３…
コンデンサ、１４…コイル、３１，３２…ダイオ
ード接続トランジスタ、３３，３４…直流阻止用
コンデンサ、３５，３６…可変電流源。
FIG. 1 is a block diagram of a voltage-controlled oscillation circuit according to an embodiment of the present invention, FIG. 2 is a block diagram of a voltage-controlled oscillation circuit according to another embodiment of the present invention, and FIG.
FIG. 4 is an oscillation frequency characteristic diagram of the voltage controlled oscillation circuit of the present invention, and FIG. 5 is a basic configuration diagram of a conventional voltage controlled oscillation circuit. . 11, 12, 20...oscillation transistor, 13...
Capacitor, 14... Coil, 31, 32... Diode-connected transistor, 33, 34... DC blocking capacitor, 35, 36... Variable current source.
Claims (1)
て、前記共振負荷に可変インピーダンス素子とし
てダイオード接続のトランジスタを直流阻止用コ
ンデンサを介して付加し、このトランジスタのコ
レクタ電流を制御することにより発振周波数を可
変とすることを特徴とする電圧制御型発振回路。1. In a voltage-controlled oscillator circuit having a resonant load, a diode-connected transistor is added as a variable impedance element to the resonant load via a DC blocking capacitor, and the oscillation frequency is made variable by controlling the collector current of this transistor. A voltage controlled oscillator circuit characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59125325A JPS615604A (en) | 1984-06-20 | 1984-06-20 | Voltage-controlled oscillating circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59125325A JPS615604A (en) | 1984-06-20 | 1984-06-20 | Voltage-controlled oscillating circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS615604A JPS615604A (en) | 1986-01-11 |
| JPH0329322B2 true JPH0329322B2 (en) | 1991-04-23 |
Family
ID=14907320
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59125325A Granted JPS615604A (en) | 1984-06-20 | 1984-06-20 | Voltage-controlled oscillating circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS615604A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6042905A (en) * | 1983-07-22 | 1985-03-07 | ジ−メンス・アクチエンゲゼルシヤフト | Frequency controllable lc oscillator |
-
1984
- 1984-06-20 JP JP59125325A patent/JPS615604A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6042905A (en) * | 1983-07-22 | 1985-03-07 | ジ−メンス・アクチエンゲゼルシヤフト | Frequency controllable lc oscillator |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS615604A (en) | 1986-01-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |