JPS6016431A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS6016431A
JPS6016431A JP58125133A JP12513383A JPS6016431A JP S6016431 A JPS6016431 A JP S6016431A JP 58125133 A JP58125133 A JP 58125133A JP 12513383 A JP12513383 A JP 12513383A JP S6016431 A JPS6016431 A JP S6016431A
Authority
JP
Japan
Prior art keywords
semiconductor element
high thermal
electrode plate
semiconductor device
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58125133A
Other languages
English (en)
Inventor
Takashi Suzumura
隆志 鈴村
Hiromichi Yoshida
博通 吉田
Yasuhiko Miyake
三宅　保彦
Sadahiko Sanki
参木　貞彦
Tatsuya Otaka
達也 大高
Akimitsu Kobayashi
小林　明光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP58125133A priority Critical patent/JPS6016431A/ja
Publication of JPS6016431A publication Critical patent/JPS6016431A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0133—Ternary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 半導体装置は半導体素子、電極板、ヒートシンク板、絶
縁板等で構成されている。半導体素子は一般に半田層等
を介して電極板に接合されるが、との′電極板に対して
は半導体素子の使用中等における温度上昇に対処するた
め次の２つの特性が要求される。すなわち、その１つは
熱応力による素子又は半田層の破壊を防止するためにシ
リコン等から成る素子の熱膨張率に近似した低膨張率を
有することであシ、他の１つは半導体素子の発熱を速や
かに取り去って温度上昇を小さく抑えるだめの高熱伝導
率を有することである。これら両省性を併有する材料と
して、従来モリブデンやタングステンが熱応力の緩衝材
として一部で使用されているが、これらの金属材料は高
価である上、加工性が悪いという大きな欠点を鳴してい
る。そこで、新しい試みとして低熱膨張金属と高熱伝導
金属とから成る多層複合材の電極板が提案されている。
ところで、従来の半導体装置の構成は第１図に示すよう
に半導体素子１、熱応力緩衝材２′、電極板２、絶縁板
３及び熱吸収板４を半田層５等を介して次々に績み重ね
て行くものである。しかしながら、上記の多層複合電極
板を使用した場合、一般に低熱ｊ杉張拐はその熱伝４率
が小さいために、この低熱膨張Ｈの層を横切る方向の熱
抵抗が大きく、第１図のような構造の半導体装置では素
子の温度を十分低く保つことができないという問題があ
った。
したがって本発明の目的は、前記した問題点を解消し、
本導体素子に加わる熱応力及び素子の温度上昇を十分小
さく保つことのできる新規な半導体装置を提供すること
にある。
すなわち本発明の要旨とするところは、低熱膨張材と高
熱伝導材とから成る多層複合電極板の半導体素子を塔載
する面が高熱伝導材で形成され、且つこの高熱伝導材に
直接もしくは半田層等を介して間接に半導体素子及び熱
の吸収帯の両者を塔載したことにある。ここで、高熱伝
導材としては銅、アルミニウム等が用いられ、また低熱
膨張材としてはイン・々（商品名）等のＦ’ｅ−Ｎｉ合
金、コノミール（間品名）等のＦｅ−Ｎｉ−Ｃｏ合金な
どの全域材料の他、ガラス−エポキシ樹脂等の複合プラ
スチックス材料が使用される。
以下、本発明による半導体装置の実施例について陰付の
図面と共に説明する。
第２〜４図は本発明の実施例による半導体装置の主要部
品の構成を示す説明図である。
第２崗は銅６−インノ”　（Ｆｅ−３６％Ｎｉ）’７−
銅８の３順接合電極板２を使用し、この電極板２の銅層
６側に半導体素子ｌと熱の吸収帯でるるヒートシンク４
とを塔載した例である。インパフの両面に銅６，８を配
置した理由は温度変化に対してノζイメタル効果を生じ
させないだめである。なお、この例では銅とインパの厚
さの比は１：０．５：１〜１：５：１の範囲で、また電
極相２としての全体の厚さは１〜３爾？の範囲で行なっ
たが、実際には各使用条件における熱膨張率及び熱放散
率等の面からみて最適設定に応じた電極材の構成とする
ことができる。
第３図は銅６−インパ７−銅８の３層重極板２の半導体
素子ｌを塔載した同じ銅層６側に熱放散を目的とした放
熱フィン９を設けたｉ＋ｌＪである。
第４図は熱の吸収を冷却水を用いて行なう場会、多層電
極板２の半導体素子１を塔載した高熱伝導層６側に冷却
水の循猿銅、ａイゾｌＯを絶縁材３を介して取り付けた
例である。なお、この例では半導体素子及び熱の吸収帯
を塔載した側の尚熱伝導層６をこれと反対側の間熱伝導
層８よりも厚くしているが、その理由は、？インタル効
果による反シの許容範囲内で熱の移動に大きな影響を及
ぼす前記高熱伝導層６を厚くした方が熱放散性が同上し
、従って半導体素子の温度を低下させることができるか
らである。
以上述べた如く、本発明によれば半導体素子に加わる熱
応力及び素子の温度上昇を十分さく保つことのできる半
導体装置を提供することができる。
【図面の簡単な説明】
第１図は従来の半導体装置の主要部品め構成を示す説明
図、第２〜４図は本発明の実施例による半導体装置の主
要部品の構成を示す説明図である。 １・・・・・・半導体素子 ２・・・・・・電極材 ２′・・・・・熱応力緩衝材 ３・・・・・・絶縁材 ４・・・・・・ヒートシンク ５・・・・・半田層 ６．８・・・・・高熱伝導材 ７・・・・低熱膨張材 ９・・・・・・放熱ファン １０・・・・・・冷却水パイプ 葎　１　日 犀３日 毘　２　図 坪４図

Claims (1)

    【特許請求の範囲】
  1. 低熱膨張材と高熱伝導材とから成る多層複合半導体゛電
    極板を有する半導体装置において、該電極板の半導体素
    子を塔載する面が高熱伝導材で形成され、且つこの高熱
    伝導相に直接もしくは半田層弄を介して間接に半導体素
    子及び熱の吸収帯の雨氷発明は半導体素子を塔載した半
    導体装置に関する。
JP58125133A 1983-07-08 1983-07-08 半導体装置 Pending JPS6016431A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58125133A JPS6016431A (ja) 1983-07-08 1983-07-08 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58125133A JPS6016431A (ja) 1983-07-08 1983-07-08 半導体装置

Publications (1)

Publication Number Publication Date
JPS6016431A true JPS6016431A (ja) 1985-01-28

Family

ID=14902669

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58125133A Pending JPS6016431A (ja) 1983-07-08 1983-07-08 半導体装置

Country Status (1)

Country Link
JP (1) JPS6016431A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996026560A1 (de) * 1995-02-22 1996-08-29 Dilas Diodenlaser Gmbh Diodenlaserbauelement mit kühlelement sowie diodenlasermodul
WO1997030494A1 (de) * 1996-02-14 1997-08-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Kühlkörper mit einer montagefläche für ein elektronisches bauteil
US6753093B2 (en) 2001-09-21 2004-06-22 Kabushiki Kaisha Toyota Jidoshokki Heat dissipating material and manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996026560A1 (de) * 1995-02-22 1996-08-29 Dilas Diodenlaser Gmbh Diodenlaserbauelement mit kühlelement sowie diodenlasermodul
WO1997030494A1 (de) * 1996-02-14 1997-08-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Kühlkörper mit einer montagefläche für ein elektronisches bauteil
US6753093B2 (en) 2001-09-21 2004-06-22 Kabushiki Kaisha Toyota Jidoshokki Heat dissipating material and manufacturing method thereof

Similar Documents

Publication Publication Date Title
US5981085A (en) Composite substrate for heat-generating semiconductor device and semiconductor apparatus using the same
US5151777A (en) Interface device for thermally coupling an integrated circuit to a heat sink
US7875972B2 (en) Semiconductor device assembly having a stress-relieving buffer layer
TWI620289B (zh) 附散熱座功率模組用基板，附冷卻器功率模組用基板及功率模組
JP6199397B2 (ja) 半導体装置およびその製造方法
JPS6016431A (ja) 半導体装置
JPS6318648A (ja) 窒化アルミニウム回路基板
JP3193142B2 (ja) 基 板
JP2919651B2 (ja) 混成集積回路
JPH0815189B2 (ja) 半導体装置の製造方法
JPH0945828A (ja) 半導体装置用パッケージ
JPS6142864B2 (ja)
JPH0439783B2 (ja)
JPS639665B2 (ja)
JP3044952B2 (ja) 半導体チップの実装構造
JPH10125831A (ja) ヒートシンク放熱フィン
JPS6066842A (ja) 半導体装置
JPS6129161A (ja) 熱伝導冷却モジユ−ル装置
JPH05136303A (ja) 電子デバイス用ヒートシンク
JPS5835956A (ja) 混成集積回路装置
JP2521624Y2 (ja) 半導体装置
JP2004200567A (ja) 放熱体及びその製造方法、パワーモジュール用基板、パワーモジュール
JP2619155B2 (ja) 混成集積回路装置
JP2000077582A (ja) 放熱材
JPH01220852A (ja) 半導体装置