JP6199397B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP6199397B2 JP6199397B2 JP2015534025A JP2015534025A JP6199397B2 JP 6199397 B2 JP6199397 B2 JP 6199397B2 JP 2015534025 A JP2015534025 A JP 2015534025A JP 2015534025 A JP2015534025 A JP 2015534025A JP 6199397 B2 JP6199397 B2 JP 6199397B2
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Description
<構成>
以下、特に指定なく銅またはアルミニウム等の材料名を記載した場合は、他の添加物を含んだ例えば銅合金またはアルミニウム合金も包含するものとする。
本実施形態によれば、半導体装置が、絶縁基板13と、絶縁基板13上に設けられた半導体チップ11と、絶縁基板13裏面に、接合材23を介して接合された冷却部材12とを備える。
<構成>
図8は、本実施形態に関する半導体装置の構造を示す断面図である。絶縁基板13aの導板5aおよび導板7aが銅または銅合金で形成されている所謂DBC基板(ダイレクトボンデッドカッパー基板、銅貼り基板)のような場合、図8に示されるように、冷却部材12の熱応力吸収部材1(純アルミニウム板)上に接合され、一体化している線膨張係数調整層31を設けてもよい。
図9は、本実施形態に関する半導体装置の構造の他の例を示す断面図である。図9に示されるように、絶縁基板13bの導板5bは、銅板51とアルミニウム板52とから構成される。また、絶縁基板13bの導板7bは、アルミニウム板72と銅板71とから構成される。銅板51および銅板71は、銅または銅合金で構成される。アルミニウム板52およびアルミニウム板72は、アルミニウムまたはアルミニウム合金で構成される。
本実施形態によれば、導板7a、または導板7bの接合材23と接触する部分である銅板71は、銅または銅合金で構成されている。そして半導体装置は、絶縁基板裏面に、接合材23を介して接合された、銅または銅合金で構成される線膨張係数調整層31を備えている。冷却部材12は、線膨張係数調整層31にさらに接合されている。
Claims (13)
- 絶縁板と、前記絶縁板両面に設けられた導板とを備える絶縁基板と、
前記絶縁基板上に設けられた半導体チップと、
前記絶縁基板裏面に、接合材を介して直接接合された冷却器とを備え、
前記冷却器は、冷却部材と、アルミニウム合金で構成される冷却器ジャケットとから構成され、
前記冷却部材は、アルミニウムで構成される熱応力吸収部材とアルミニウム合金で構成される熱伝導金属部材とが一体となった複合部材であり、
前記熱伝導金属部材の前記熱応力吸収部材と接続する面とは反対側の面において、フィンまたは溝が形成され、
前記熱応力吸収部材は、前記絶縁基板裏面と接合する側に配置され、
前記熱応力吸収部材の降伏応力が、前記接合材の降伏応力より小さいことを特徴とする、
半導体装置。 - 前記冷却部材に複数の絶縁基板を配置してなる、
請求項1に記載の半導体装置。 - 前記熱応力吸収部材が、純度99.5%以上のアルミニウムで構成されていることを特徴とする、
請求項1または2に記載の半導体装置。 - 前記導板の少なくとも前記接合材と接触する部分は、銅または銅合金で構成され、
前記冷却部材と一体としてなる銅または銅合金で構成される線膨張係数調整層を備える部材が、前記絶縁基板裏面に、前記接合材を介して接合されていることを特徴とする、
請求項1から3のうちのいずれか1項に記載の半導体装置。 - 前記導板が、銅または銅合金と、アルミニウムまたはアルミニウム合金との積層構造で構成されていることを特徴とする、
請求項4に記載の半導体装置。 - 前記導板が、純度99.5%以上のアルミニウムで構成される層を含むことを特徴とする、
請求項5に記載の半導体装置。 - 前記熱伝導金属部材が、純度99.0%未満のアルミニウム合金で構成されていることを特徴とする、
請求項1から6のうちのいずれか1項に記載の半導体装置。 - 前記半導体チップがSiCで構成されていることを特徴とする、
請求項1から7のうちのいずれか1項に記載の半導体装置。 - 前記冷却部材は、アルミニウムで構成される熱応力吸収部材と熱伝導金属部材とが一体となった複合部材であり、熱伝導金属部材の厚みが1mm以上10mm以下であり、熱応力吸収部材の厚みは、該熱伝導金属部材の厚み以下であることを特徴とする、
請求項1から8のうちのいずれか1項に記載の半導体装置。 - 絶縁板と、前記絶縁板両面に設けられた導板とを備える絶縁基板と、
前記絶縁基板上に設けられた半導体チップと、
前記絶縁基板裏面に、接合材を介して直接接合された冷却器とを備え、
前記冷却器は、冷却部材と、アルミニウム合金で構成される冷却器ジャケットとから構成され、
前記冷却部材は、アルミニウムで構成される熱応力吸収部材とアルミニウム合金で構成される熱伝導金属部材とが積み重なった複合部材であり、
前記熱伝導金属部材の前記熱応力吸収部材と接続する面とは反対側の面において、フィンまたは溝が形成され、
前記熱応力吸収部材は、前記絶縁基板裏面と接合する側に配置され、
前記熱応力吸収部材が、純度99.5%以上のアルミニウムで構成されていることを特徴とする、
半導体装置。 - 前記冷却部材は、アルミニウムで構成される熱応力吸収部材とアルミニウム合金で構成される熱伝導金属部材とが一体となった複合部材であり、熱伝導金属部材の厚みが1mm以上10mm以下であり、熱応力吸収部材の厚みは、該熱伝導金属部材の厚み以下であることを特徴とする、
請求項10に記載の半導体装置。 - (a)絶縁板と、前記絶縁板両面に設けられた導板とを備える絶縁基板を用意する工程と、
(b)前記絶縁基板上に半導体チップを配置する工程と、
(c)アルミニウムで構成される熱応力吸収部材とアルミニウム合金で構成される熱伝導金属部材とを熱間圧延することで一体化させ、複合部材である冷却部材を形成する工程と、
(d)前記絶縁基板裏面に、接合材を介して前記冷却部材の前記熱応力吸収部材側を直接接合させる工程とを備え、
前記熱応力吸収部材の降伏応力が、前記接合材の降伏応力より小さく、
前記熱伝導金属部材の前記熱応力吸収部材と接続する面とは反対側の面において、フィンまたは溝が形成されていることを特徴とする、
半導体装置の製造方法。 - (a)絶縁板と、前記絶縁板両面に設けられた導板とを備える絶縁基板を用意する工程と、
(b)前記絶縁基板上に半導体チップを配置する工程と、
(c)アルミニウムで構成される熱応力吸収部材とアルミニウム合金で構成される熱伝導金属部材とから、複合部材である冷却部材を形成する工程と、
(d)前記冷却部材の前記熱応力吸収部材側に、コールドスプレー法を用いて、銅または銅合金で構成される線膨張係数調整層を形成する工程と、
(e)前記絶縁基板裏面に、接合材を介して、前記線膨張係数調整層を直接接合させる工程とを備え、
前記熱応力吸収部材の降伏応力が、前記接合材の降伏応力より小さく、
前記導板の少なくとも前記接合材と接触する部分は、銅または銅合金で構成されており、
前記熱伝導金属部材の前記熱応力吸収部材と接続する面とは反対側の面において、フィンまたは溝が形成されていることを特徴とする、
半導体装置の製造方法。
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