JPS58109271U - semiconductor laser - Google Patents
semiconductor laserInfo
- Publication number
- JPS58109271U JPS58109271U JP584182U JP584182U JPS58109271U JP S58109271 U JPS58109271 U JP S58109271U JP 584182 U JP584182 U JP 584182U JP 584182 U JP584182 U JP 584182U JP S58109271 U JPS58109271 U JP S58109271U
- Authority
- JP
- Japan
- Prior art keywords
- refractive index
- layer
- semiconductor laser
- active layer
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来のｐｃｗ型半導体レーザの概略を示す断面
図、第２図はｐｃｗ型半導体レーザを構 成する溝部を
平坦に埋め込むために必要な溝の外部に成長する光ガイ
ド層の液相エピタキシャル成長条件を示す図面、第３図
は本考案の一実施例におけるＰＣＷ型半導体レーザの概
略を示す断面図である。
図において、１．９・・・・・・半導体基体、２・・・
・・・矩形溝、３，１１・・・・・・光ガイド層、・４
，１２・・・・・・活性層、５．１３・・・・・・クラ
ッド層、６．１５・・・・・・ＳｉＯ□膜、７．１４・
・・・・・Ｐ型電極、８．１６・・・・・・ｎ型電極、
１０・・・・・・２１１Ａ面を両側面とする矩形溝をそ
れぞれ示す。Figure 1 is a cross-sectional view schematically showing a conventional PCW semiconductor laser, and Figure 2 is a liquid phase diagram of a light guide layer that grows outside the groove, which is necessary to flatten the groove forming the PCW semiconductor laser. FIG. 3, which is a drawing showing epitaxial growth conditions, is a sectional view schematically showing a PCW type semiconductor laser according to an embodiment of the present invention. In the figure, 1.9...semiconductor substrate, 2...
...Rectangular groove, 3,11...Light guide layer, 4
, 12... Active layer, 5.13... Clad layer, 6.15... SiO□ film, 7.14...
...P type electrode, 8.16...N type electrode,
10...211A rectangular groove having both sides of the A plane is shown.
Claims (1)
りも禁止帯幅が小さく且つ押折率の小さい光ガイド層と
、該光ガイド層よりも禁止帯幅が小さく且つ屈折率の大
きな活性層と、該光ガイド層と該活性層の両方の禁止帯
幅よりも太き（、且つ両方の屈折率より小さい屈折率を
有するクラッド層とを順次形成し、該活性層に所定の電
流を注入して励起する構造を備えた半導体レーザに部い
て、前記溝の両側面を２１１へ面としたことを特徴とす
る半導体レーザ。on a semiconductor substrate having a groove; at least a light guide layer having a bandgap width smaller than that of the semiconductor substrate and a lower refractive index; and an active layer having a bandgap width smaller and a larger refractive index than the light guide layer; A cladding layer that is thicker than the forbidden band width of both the optical guide layer and the active layer (and has a refractive index smaller than the refractive index of both) is sequentially formed, and a predetermined current is injected into the active layer. A semiconductor laser having an excitation structure, wherein both side surfaces of the groove are made to face 211.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP584182U JPS58109271U (en) | 1982-01-20 | 1982-01-20 | semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP584182U JPS58109271U (en) | 1982-01-20 | 1982-01-20 | semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58109271U true JPS58109271U (en) | 1983-07-25 |
| JPS6334293Y2 JPS6334293Y2 (en) | 1988-09-12 |
Family
ID=30018635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP584182U Granted JPS58109271U (en) | 1982-01-20 | 1982-01-20 | semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58109271U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5887370U (en) * | 1981-12-08 | 1983-06-14 | 日本電気株式会社 | semiconductor laser |
-
1982
- 1982-01-20 JP JP584182U patent/JPS58109271U/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5887370U (en) * | 1981-12-08 | 1983-06-14 | 日本電気株式会社 | semiconductor laser |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6334293Y2 (en) | 1988-09-12 |
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