JPS60181063U - semiconductor laser - Google Patents

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の半導体レーザを示す模式図、第２図はＭ
ａｘｗｅｌｌの方程式に基づく発振モード特性を示すグ
ラフ、第３図、第６図、第７図は本考案の実施例を示す
断面図、第４図は第３図における主要部の拡大模式図、
第５図は特性図である。 １１．２１・・・基板、１２・・・第１クラッド層（第
１注入層）、１３．２６・・・活性層、１４，１５゜１
６・・・第２、第３、第４クラツトド層（第２注入層）
、２３．２４．２５・・・第１、第２、第３クラッド層
（第１注入層）、２７・・・第４クラッド層（第２注入
層）。Figure 1 is a schematic diagram showing a conventional semiconductor laser, Figure 2 is an M
A graph showing oscillation mode characteristics based on the axwell equation; FIGS. 3, 6, and 7 are cross-sectional views showing embodiments of the present invention; FIG. 4 is an enlarged schematic diagram of the main parts in FIG. 3;
FIG. 5 is a characteristic diagram. 11.21...Substrate, 12...First cladding layer (first injection layer), 13.26...Active layer, 14,15゜1
6... Second, third, and fourth clad layers (second injection layer)
, 23.24.25... first, second, and third cladding layers (first injection layer), 27... fourth cladding layer (second injection layer).

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 一主面にストライプ状の凸部もしくは凹部を有する基板
、該基板の一生面上に順次積層されると共にその表面形
状は上記基板の一主面の形状と略同−となる第１注入層
、活性層、第２注入層を備え、上記第１、第２注入層は
上記活性層よりバンドギャップエネルギーが大でかつ光
屈折率が小であり、また上記第１、第２注入層のうち一
方は上記ストライプ直上の活性層の両側に位置すると共
に光屈折率が異なる２層を交互に重畳してなることを特
徴とする半導体レーザ。a substrate having striped convex portions or concave portions on one main surface; a first injection layer which is sequentially laminated on the entire surface of the substrate and whose surface shape is approximately the same as the shape of the one main surface of the substrate; an active layer and a second injection layer, the first and second injection layers have a larger band gap energy and a smaller optical refractive index than the active layer, and one of the first and second injection layers A semiconductor laser characterized in that two layers located on both sides of the active layer directly above the stripe and having different optical refractive indexes are alternately superimposed.