JPS58150856U - semiconductor laser equipment - Google Patents
semiconductor laser equipmentInfo
- Publication number
- JPS58150856U JPS58150856U JP4822382U JP4822382U JPS58150856U JP S58150856 U JPS58150856 U JP S58150856U JP 4822382 U JP4822382 U JP 4822382U JP 4822382 U JP4822382 U JP 4822382U JP S58150856 U JPS58150856 U JP S58150856U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser element
- lens
- face
- same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来の半導体レーザをレンズを介して単一モー
ド光ファイバと結合した場合の構成図、第２図は本考案
の半導体レーザ装置の構造説明図で、同図ａは製造途中
段階における斜視図、ｂは完成時の斜視図である。
１・・・半導体レーザ素子、２・・・単一モード光ファ
イバ、３・・・レンズ、４・・・レーザマウント、５・
・・レンズホルダ、６・・・光フアイバホルダ、７・・
・活性層、８・・・溝、９・・・基板、１０・・・半導
体レーザ素子を形成する結晶部分、１１・・・レンズを
形成する結晶部分、１０′・・・半導体レーザ素子、１
１′・・・レンズ、１２・・・クラッド層、１３． １
３’・・・電極、１４・・・球面。Fig. 1 is a configuration diagram of a conventional semiconductor laser coupled to a single mode optical fiber through a lens, Fig. 2 is an explanatory diagram of the structure of the semiconductor laser device of the present invention, and Fig. A perspective view, b is a perspective view when completed. DESCRIPTION OF SYMBOLS 1... Semiconductor laser element, 2... Single mode optical fiber, 3... Lens, 4... Laser mount, 5...
...Lens holder, 6...Optical fiber holder, 7...
- Active layer, 8...Groove, 9...Substrate, 10...Crystal portion forming a semiconductor laser element, 11...Crystal portion forming a lens, 10'...Semiconductor laser element, 1
1'... Lens, 12... Clad layer, 13. 1
3'...electrode, 14...spherical surface.
Claims (1)
ザ素子のレーザ光出射端面に所定の間隔をもって入射端
面が対向するレンズを設け、該レンズが上記半導体レー
ザ素子と同一工程で作られた同一の材質、同一の層構造
を有し、かつレンズ出射側端面を上記半導体レーザ素子
の活性層の中心軸を中心軸とする所定半径の球面を有す
るようにして構成したことを特徴とする半導体レーザ装
置。A semiconductor laser element and a lens whose incident end face faces the laser beam emitting end face of the semiconductor laser element at a predetermined distance are provided on the same semiconductor substrate, and the lens is made of the same material as the semiconductor laser element made in the same process. , a semiconductor laser device having the same layer structure and having an end face on the exit side of the lens having a spherical surface having a predetermined radius whose center axis is the central axis of the active layer of the semiconductor laser element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4822382U JPS58150856U (en) | 1982-04-05 | 1982-04-05 | semiconductor laser equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4822382U JPS58150856U (en) | 1982-04-05 | 1982-04-05 | semiconductor laser equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58150856U true JPS58150856U (en) | 1983-10-08 |
Family
ID=30059154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4822382U Pending JPS58150856U (en) | 1982-04-05 | 1982-04-05 | semiconductor laser equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58150856U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11298046A (en) * | 1998-03-18 | 1999-10-29 | Trw Inc | Manufacture of semiconductor optical microlens |
-
1982
- 1982-04-05 JP JP4822382U patent/JPS58150856U/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11298046A (en) * | 1998-03-18 | 1999-10-29 | Trw Inc | Manufacture of semiconductor optical microlens |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS58150856U (en) | semiconductor laser equipment | |
| JPS6048265U (en) | Laser diode array module | |
| JPS5891716U (en) | Laser beam introduction device to optical fiber | |
| JPS5984511U (en) | Coupling structure of semiconductor laser and optical fiber | |
| JPS59104121U (en) | fiber optic input device | |
| JPS6054361U (en) | semiconductor laser equipment | |
| JPS60140004U (en) | light irradiation device | |
| JPS61174765U (en) | ||
| JPS5946320U (en) | optical deflector | |
| JPS59123836U (en) | optical deflector | |
| JPS597419U (en) | Optical fiber terminal | |
| JPS60153560U (en) | semiconductor laser module | |
| JPS5821104U (en) | solar energy guide device | |
| JPS59123826U (en) | Light beam scanning device | |
| JPS6113802U (en) | optical circuit | |
| JPS60125760U (en) | semiconductor laser module | |
| JPS60100728U (en) | Fiber optic polarization rotation device | |
| JPS6150906U (en) | ||
| JPS5820552U (en) | High power laser equipment | |
| JPS6146080U (en) | Optical device for laser marking | |
| JPS6149312U (en) | ||
| JPS59161522U (en) | Laser light source device | |
| JPS5989321U (en) | Variable focus integrated lens | |
| JPS63191378U (en) | ||
| JPS60146370U (en) | semiconductor laser |