JPS5887370U - semiconductor laser - Google Patents

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来のｐｃｗ型半導体レーザの概略を示す断面
図、第２図は半導体基体にＶ字状の溝を形成した従来の
ｐｃｗ型半導体レーザの概略を示す断面図、第３図は本
考案の一実施例におけるＰＣＷ型半導体レーザの概略を
示す断面図をそれ、ぞれ示す。 図において：ｔ、９．ｔｏ・・・半導体基体、２゜１０
．１９・・・光ガイド及びキャリア閉じ込め層、３、　
１１．　２０・・・活性層、４．　１２．　２１・・・
光子及びキャリア閉じ込め層、１３．２２・・・ＳｉＯ
□膜、６、　１４．　２３・・・ｎ型電極、？、　　１
３．　２４−Ｐ型電極、８・・・矩形状の溝、１６・・
・Ｖ字状の溝、２５・・・２１１面からなるＶ字状の溝
、１７．２６・・・整流接合をそれぞれ示す。FIG. 1 is a cross-sectional view schematically showing a conventional PCW type semiconductor laser, FIG. 2 is a cross-sectional view schematically showing a conventional PCW type semiconductor laser in which a V-shaped groove is formed in a semiconductor substrate, and FIG. 1A and 1B are cross-sectional views schematically showing a PCW semiconductor laser according to an embodiment of the invention. In the figure: t, 9. to...semiconductor substrate, 2゜10
．． 19...Light guide and carrier confinement layer, 3,
11. 20...active layer, 4. 12. 21...
Photon and carrier confinement layer, 13.22...SiO
□Membrane, 6, 14. 23...n-type electrode, ? , 1
3. 24-P type electrode, 8... rectangular groove, 16...
・V-shaped groove, 25... A V-shaped groove consisting of 211 planes, 17.26... Shows a rectifying junction, respectively.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] ２１１面からなるＶ溝を有する半導体上に少なくとも、
該半導体基体よりも禁止帯幅が小さく且つ屈折率の小さ
な光ガイド層と該光ガイド層よりも禁止帯幅が小さく、
且つ屈折率の大きな活性層と該光ガイド層と該活性層の
両方の禁止帯幅よりも太き（、且つ両方の屈折率より小
さい屈折率を有するクラッド層とを順次形成し、該活性
層に所定の電流を注入して励起する構造を備えたことを
特徴とする半導体レーザ。At least on a semiconductor having a V-groove consisting of 211 planes,
a light guide layer having a bandgap width smaller than that of the semiconductor substrate and a refractive index; and a bandgap width smaller than the light guide layer;
In addition, an active layer having a large refractive index and a cladding layer having a refractive index larger than the forbidden band width of both the optical guide layer and the active layer (and smaller than the refractive index of both) are sequentially formed, and the active layer What is claimed is: 1. A semiconductor laser characterized by having a structure that is excited by injecting a predetermined current into the semiconductor laser.