JPS5793579A - Compound semiconductor device - Google Patents

Compound semiconductor device

Info

Publication number
JPS5793579A
JPS5793579A JP16949880A JP16949880A JPS5793579A JP S5793579 A JPS5793579 A JP S5793579A JP 16949880 A JP16949880 A JP 16949880A JP 16949880 A JP16949880 A JP 16949880A JP S5793579 A JPS5793579 A JP S5793579A
Authority
JP
Japan
Prior art keywords
region
junction
type
contacted
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16949880A
Other languages
Japanese (ja)
Other versions
JPS6314508B2 (en
Inventor
Mikio Tatematsu
Kiyoo Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16949880A priority Critical patent/JPS5793579A/en
Publication of JPS5793579A publication Critical patent/JPS5793579A/en
Publication of JPS6314508B2 publication Critical patent/JPS6314508B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To protect a gate electrode from high electric impact by providing means for drawing the extension of the gate electrode of a Shottky type field effect transistor using GaAs onto a P-N junction region not contacted with a Schottky junction. CONSTITUTION:In a field effect transistor having an N type source region 2, drain region 3 and a channel region 4 formed on a GaAs semi-insulating substrate 1, a P type region 8 contacted with the region 2 but not contacted with the region 4 is formed, and the other extension region of the gate electrode 7 forming a Schottky junction with the region 4 is drawn onto a P type region 8. The electron density of the region 2 is formed higher than the channel region 4, and the reverse withstand voltage of the P-N junction of the P type region 8 and the source region 2 can become lower than the Schottky junction, and the P-N junction breaks down the high reverse voltage, thereby protecting the Schottky junction.
JP16949880A 1980-12-03 1980-12-03 Compound semiconductor device Granted JPS5793579A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16949880A JPS5793579A (en) 1980-12-03 1980-12-03 Compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16949880A JPS5793579A (en) 1980-12-03 1980-12-03 Compound semiconductor device

Publications (2)

Publication Number Publication Date
JPS5793579A true JPS5793579A (en) 1982-06-10
JPS6314508B2 JPS6314508B2 (en) 1988-03-31

Family

ID=15887630

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16949880A Granted JPS5793579A (en) 1980-12-03 1980-12-03 Compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS5793579A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57130476A (en) * 1981-02-05 1982-08-12 Sony Corp Semiconductor device
JPS62145876A (en) * 1985-12-20 1987-06-29 Sanyo Electric Co Ltd Protecting diode for compound semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0329121U (en) * 1989-08-01 1991-03-22

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5348487A (en) * 1976-10-14 1978-05-01 Fujitsu Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5348487A (en) * 1976-10-14 1978-05-01 Fujitsu Ltd Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57130476A (en) * 1981-02-05 1982-08-12 Sony Corp Semiconductor device
JPS62145876A (en) * 1985-12-20 1987-06-29 Sanyo Electric Co Ltd Protecting diode for compound semiconductor device

Also Published As

Publication number Publication date
JPS6314508B2 (en) 1988-03-31

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