JPS5771179A - Input protective circuit device - Google Patents

Input protective circuit device

Info

Publication number
JPS5771179A
JPS5771179A JP55146954A JP14695480A JPS5771179A JP S5771179 A JPS5771179 A JP S5771179A JP 55146954 A JP55146954 A JP 55146954A JP 14695480 A JP14695480 A JP 14695480A JP S5771179 A JPS5771179 A JP S5771179A
Authority
JP
Japan
Prior art keywords
region
regions
type diode
type
breakdown voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55146954A
Other languages
Japanese (ja)
Other versions
JPH0572110B2 (en
Inventor
Noburo Tanimura
Osamu Takahashi
Akira Yamamoto
Kiyobumi Uchibori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55146954A priority Critical patent/JPS5771179A/en
Publication of JPS5771179A publication Critical patent/JPS5771179A/en
Publication of JPH0572110B2 publication Critical patent/JPH0572110B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)

Abstract

PURPOSE:To effectively protect the next step circuit by a method wherein a junction-type diode and an MIS type diode are formed in parallel on one semiconductor substrate and a desired breakdown voltage is set by selecting the channel length of the MIS type diode. CONSTITUTION:A P type well region 2 is formed by diffusion in an N type Si substrate 1 and N<+> type regions 3 and 7 are provided in the region 2 and input is connected to the region 3 and a junction-type diode is composed between the regions 3 and 2. And a gate electrode 6 is mounted between the regions 3 and 7 through a thin gate oxide film 8 and an MIS type diode forming the regions 3 and 7 as a drain region and a source region respectively is composed. Next, each P<+> type region 4 is formed by diffusion at the outside of the regions 3 and 7 by locating the regions 4 in the region 2 through oxide films 5 and the regions 4 are connected to a low- potential source and the region 7 and the gate 6 are connected to the low-potential source. In this composition, with a desired breakdown voltage set by selecting the channel length of the MIS type diode, and increase in the breakdown voltage of a protective circuit connected to the MIS type diode is permitted.
JP55146954A 1980-10-22 1980-10-22 Input protective circuit device Granted JPS5771179A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55146954A JPS5771179A (en) 1980-10-22 1980-10-22 Input protective circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55146954A JPS5771179A (en) 1980-10-22 1980-10-22 Input protective circuit device

Publications (2)

Publication Number Publication Date
JPS5771179A true JPS5771179A (en) 1982-05-01
JPH0572110B2 JPH0572110B2 (en) 1993-10-08

Family

ID=15419327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55146954A Granted JPS5771179A (en) 1980-10-22 1980-10-22 Input protective circuit device

Country Status (1)

Country Link
JP (1) JPS5771179A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59218764A (en) * 1983-05-27 1984-12-10 Hitachi Ltd Semiconductor integrated circuit device
JPS6164152A (en) * 1984-09-06 1986-04-02 Fujitsu Ltd C-mos circuit
JPH02238668A (en) * 1989-03-10 1990-09-20 Fujitsu Ltd Semiconductor device
JPH0396273A (en) * 1989-09-08 1991-04-22 Nec Corp Complementary-type mis semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS532087A (en) * 1976-06-29 1978-01-10 Toshiba Corp Input protection circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS532087A (en) * 1976-06-29 1978-01-10 Toshiba Corp Input protection circuit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59218764A (en) * 1983-05-27 1984-12-10 Hitachi Ltd Semiconductor integrated circuit device
JPH0526344B2 (en) * 1983-05-27 1993-04-15 Hitachi Ltd
JPS6164152A (en) * 1984-09-06 1986-04-02 Fujitsu Ltd C-mos circuit
JPH02238668A (en) * 1989-03-10 1990-09-20 Fujitsu Ltd Semiconductor device
JPH0396273A (en) * 1989-09-08 1991-04-22 Nec Corp Complementary-type mis semiconductor device

Also Published As

Publication number Publication date
JPH0572110B2 (en) 1993-10-08

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