JPS6489367A - High breakdown strength semiconductor device - Google Patents

High breakdown strength semiconductor device

Info

Publication number
JPS6489367A
JPS6489367A JP62243618A JP24361887A JPS6489367A JP S6489367 A JPS6489367 A JP S6489367A JP 62243618 A JP62243618 A JP 62243618A JP 24361887 A JP24361887 A JP 24361887A JP S6489367 A JPS6489367 A JP S6489367A
Authority
JP
Japan
Prior art keywords
region
breakdown strength
semiconductor device
high breakdown
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62243618A
Other languages
Japanese (ja)
Other versions
JPH0770714B2 (en
Inventor
Takehide Shirato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62243618A priority Critical patent/JPH0770714B2/en
Publication of JPS6489367A publication Critical patent/JPS6489367A/en
Publication of JPH0770714B2 publication Critical patent/JPH0770714B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce a leakage current by forming the edge of a channel stopper region to arrive at the surface of a semiconductor substrate, forming a drain region separately from the edge of the stopper region, and injecting an impurity therebetween. CONSTITUTION:A channel stopper region 2 is formed on a whole surface directly under a field insulating film 3, and a transistor region, such as a drain region 7 is formed inside an opening formed at the film 3. The edges of at least drains 7, 7A of the transistor region and a field insulating film 3 are isolated as shown by an arrow A1. An impurity for regulating a threshold voltage is injected to a substrate 1 between the regions 2 and 7. Thus, its breakdown strength is improved, and a leakage current can be reduced.
JP62243618A 1987-09-30 1987-09-30 High voltage semiconductor device Expired - Lifetime JPH0770714B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62243618A JPH0770714B2 (en) 1987-09-30 1987-09-30 High voltage semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62243618A JPH0770714B2 (en) 1987-09-30 1987-09-30 High voltage semiconductor device

Publications (2)

Publication Number Publication Date
JPS6489367A true JPS6489367A (en) 1989-04-03
JPH0770714B2 JPH0770714B2 (en) 1995-07-31

Family

ID=17106500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62243618A Expired - Lifetime JPH0770714B2 (en) 1987-09-30 1987-09-30 High voltage semiconductor device

Country Status (1)

Country Link
JP (1) JPH0770714B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06216380A (en) * 1992-10-07 1994-08-05 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
EP0804830A1 (en) * 1995-11-21 1997-11-05 Information Storage Devices, Inc. A clocked high voltage switch
US20120018805A1 (en) * 2010-07-20 2012-01-26 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JP2013247300A (en) * 2012-05-28 2013-12-09 Canon Inc Semiconductor device, semiconductor device manufacturing method and liquid discharge device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63305562A (en) * 1987-06-05 1988-12-13 Sony Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63305562A (en) * 1987-06-05 1988-12-13 Sony Corp Semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06216380A (en) * 1992-10-07 1994-08-05 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
EP0804830A1 (en) * 1995-11-21 1997-11-05 Information Storage Devices, Inc. A clocked high voltage switch
EP0804830A4 (en) * 1995-11-21 1998-04-29 Information Storage Devices A clocked high voltage switch
US20120018805A1 (en) * 2010-07-20 2012-01-26 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JP2012028378A (en) * 2010-07-20 2012-02-09 Toshiba Corp Semiconductor device and method of manufacturing the same
US9070769B2 (en) 2010-07-20 2015-06-30 Kabushiki Kaisha Toshiba Semiconductor device with a depletion channel and method of manufacturing the same
JP2013247300A (en) * 2012-05-28 2013-12-09 Canon Inc Semiconductor device, semiconductor device manufacturing method and liquid discharge device

Also Published As

Publication number Publication date
JPH0770714B2 (en) 1995-07-31

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