JPS5737883A - Compound semiconductor device - Google Patents

Compound semiconductor device

Info

Publication number
JPS5737883A
JPS5737883A JP11343780A JP11343780A JPS5737883A JP S5737883 A JPS5737883 A JP S5737883A JP 11343780 A JP11343780 A JP 11343780A JP 11343780 A JP11343780 A JP 11343780A JP S5737883 A JPS5737883 A JP S5737883A
Authority
JP
Japan
Prior art keywords
channel
layer
gate electrode
ohmic electrode
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11343780A
Other languages
Japanese (ja)
Other versions
JPS6314507B2 (en
Inventor
Mikio Tatematsu
Kiyoo Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11343780A priority Critical patent/JPS5737883A/en
Publication of JPS5737883A publication Critical patent/JPS5737883A/en
Publication of JPS6314507B2 publication Critical patent/JPS6314507B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To protect an FET by taking the gate electrode out of an N channel in a MESFET so as to be directly connected to a P layer and an ohmic electrode provided on a GaAs substrate except for the source, drain and channel. CONSTITUTION:A source 12, a drain 13 and electrodes 15 and 16 are provided on a GaAs substrate 1 while the gate electrode 17 on the channel 14 is taken out and a P layer 18 is made near the gate electrode except for these regions to attach an ohmic electrode 19 thereto. An N layer 20 is made adjacent to the layer 18 far separated therefrom to attach an ohmic electrode 21 thereto. The layers 18 and 20 are higher in the carrier concentration that the channel 14. The electrodes 21 and 15 are connected. When an excessive reverse voltage is applied on the gate electrode 17, the P-N junction between the layers 18 and 20 is subjected to a breakdown before the Schottkey junction thereby protecting an FET. As compared with the external mounting of a Zener diode, this can reduce the number of parts, the man-hour of assembly and the installation space of the device.
JP11343780A 1980-08-20 1980-08-20 Compound semiconductor device Granted JPS5737883A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11343780A JPS5737883A (en) 1980-08-20 1980-08-20 Compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11343780A JPS5737883A (en) 1980-08-20 1980-08-20 Compound semiconductor device

Publications (2)

Publication Number Publication Date
JPS5737883A true JPS5737883A (en) 1982-03-02
JPS6314507B2 JPS6314507B2 (en) 1988-03-31

Family

ID=14612194

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11343780A Granted JPS5737883A (en) 1980-08-20 1980-08-20 Compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS5737883A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5348487A (en) * 1976-10-14 1978-05-01 Fujitsu Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5348487A (en) * 1976-10-14 1978-05-01 Fujitsu Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS6314507B2 (en) 1988-03-31

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