JPS55103769A - Input protection device for semiconductor device - Google Patents

Input protection device for semiconductor device

Info

Publication number
JPS55103769A
JPS55103769A JP1209079A JP1209079A JPS55103769A JP S55103769 A JPS55103769 A JP S55103769A JP 1209079 A JP1209079 A JP 1209079A JP 1209079 A JP1209079 A JP 1209079A JP S55103769 A JPS55103769 A JP S55103769A
Authority
JP
Japan
Prior art keywords
substrate
diffused layer
type
input
becomes large
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1209079A
Other languages
Japanese (ja)
Other versions
JPS6410941B2 (en
Inventor
Mikio Bessho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1209079A priority Critical patent/JPS55103769A/en
Publication of JPS55103769A publication Critical patent/JPS55103769A/en
Publication of JPS6410941B2 publication Critical patent/JPS6410941B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To prevent gate breakdown without lowering the operating frequency by a method wherein an input protecting impurity region of the conduction type opposite to that of the substrate is provided on the substrate, a region of the same conduction type as the substrate and having a high impurity concentration is provided in this region and it is connected to the substrate. CONSTITUTION:A p-type input protecting, diffused layer 4b is formed on n-type semiconductor substrate 1, and further, n<+>-type impurity diffused layer 3 having a higher impurity concentration than p-type input protecting diffused layer 4b is provided. An n<+>-impurity diffused layer 3 and substrate 1 are electrically connected to substrate 1 by means of grounding metal electrode 6''. By this, the deplation layer formed by the reverse bias between diffused layer 3 and diffused layer 4, and that between diffused layer 4 and substrate 1 becomes large as the input negative voltage becomes large, that is, the value of input protecting resistance becomes large, so that gate breakdown due to excess input negative voltage is prevented.
JP1209079A 1979-02-05 1979-02-05 Input protection device for semiconductor device Granted JPS55103769A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1209079A JPS55103769A (en) 1979-02-05 1979-02-05 Input protection device for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1209079A JPS55103769A (en) 1979-02-05 1979-02-05 Input protection device for semiconductor device

Publications (2)

Publication Number Publication Date
JPS55103769A true JPS55103769A (en) 1980-08-08
JPS6410941B2 JPS6410941B2 (en) 1989-02-22

Family

ID=11795866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1209079A Granted JPS55103769A (en) 1979-02-05 1979-02-05 Input protection device for semiconductor device

Country Status (1)

Country Link
JP (1) JPS55103769A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5596216A (en) * 1994-10-31 1997-01-21 Nec Corporation Semiconductor device with diode and capable of device protection

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5391679A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Semiconductor high breakdown voltage and high resistance element
JPS53118388A (en) * 1977-03-25 1978-10-16 Nec Corp Semiconductor integrated circuit device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5391679A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Semiconductor high breakdown voltage and high resistance element
JPS53118388A (en) * 1977-03-25 1978-10-16 Nec Corp Semiconductor integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5596216A (en) * 1994-10-31 1997-01-21 Nec Corporation Semiconductor device with diode and capable of device protection

Also Published As

Publication number Publication date
JPS6410941B2 (en) 1989-02-22

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