JPS5793567A - Integrated photodetecting circuit device - Google Patents

Integrated photodetecting circuit device

Info

Publication number
JPS5793567A
JPS5793567A JP55169678A JP16967880A JPS5793567A JP S5793567 A JPS5793567 A JP S5793567A JP 55169678 A JP55169678 A JP 55169678A JP 16967880 A JP16967880 A JP 16967880A JP S5793567 A JPS5793567 A JP S5793567A
Authority
JP
Japan
Prior art keywords
region
type
circuit device
isolating
photodetecting circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55169678A
Other languages
Japanese (ja)
Other versions
JPS5932901B2 (en
Inventor
Haruo Mori
Taiji Usui
Makoto Hagiwara
Kuniyasu Kawarada
Toshio Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Original Assignee
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Oki Electric Industry Co Ltd filed Critical Nippon Telegraph and Telephone Corp
Priority to JP55169678A priority Critical patent/JPS5932901B2/en
Publication of JPS5793567A publication Critical patent/JPS5793567A/en
Publication of JPS5932901B2 publication Critical patent/JPS5932901B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To obtain an integrated photodetecting circuit device by forming a P type region in an N type semicomductor substrate region except the isolating region to form a photodetector, thereby improving the photoelectric conversion efficiency and eliminating the restriction of the incident direction of the light. CONSTITUTION:A P type region 42, N<+> floating layers 431, 432 are formed on an N type silicon substrate 41, and an N type semiconductor layer 44 is epitaxially grown. Then, P type isolation region 45 is formed as an isolation region 44. A base region 46 is formed in the first isolating region 441, a resistor 47 is formed in the second isolating region 442, and a P type semiconductor region 48 forforming a photodetecting diode 49 is formed simultaneously in not isolated N type semiconductor region 443. then, the N type emitter region 51 is formed as a transistor 52, an aluminum wire 54 is formed to complete an integrated photodetecting circuit device.
JP55169678A 1980-12-03 1980-12-03 Integrated photodetector circuit device Expired JPS5932901B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55169678A JPS5932901B2 (en) 1980-12-03 1980-12-03 Integrated photodetector circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55169678A JPS5932901B2 (en) 1980-12-03 1980-12-03 Integrated photodetector circuit device

Publications (2)

Publication Number Publication Date
JPS5793567A true JPS5793567A (en) 1982-06-10
JPS5932901B2 JPS5932901B2 (en) 1984-08-11

Family

ID=15890871

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55169678A Expired JPS5932901B2 (en) 1980-12-03 1980-12-03 Integrated photodetector circuit device

Country Status (1)

Country Link
JP (1) JPS5932901B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6043857A (en) * 1983-08-20 1985-03-08 Mitsubishi Electric Corp Solid-state image pickup device and manufacture thereof
JPS60187878A (en) * 1984-03-08 1985-09-25 Res Dev Corp Of Japan Detector for radiation distribution of semiconductor
JPH01123480A (en) * 1987-11-07 1989-05-16 Fuji Electric Co Ltd Photo detector

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6043857A (en) * 1983-08-20 1985-03-08 Mitsubishi Electric Corp Solid-state image pickup device and manufacture thereof
JPS60187878A (en) * 1984-03-08 1985-09-25 Res Dev Corp Of Japan Detector for radiation distribution of semiconductor
JPH01123480A (en) * 1987-11-07 1989-05-16 Fuji Electric Co Ltd Photo detector

Also Published As

Publication number Publication date
JPS5932901B2 (en) 1984-08-11

Similar Documents

Publication Publication Date Title
JPS5513938A (en) Photoelectronic conversion semiconductor device and its manufacturing method
GB1452884A (en) Semiconductor devices
WO1989010007A3 (en) Buried junction infrared photodetectors
JPS5793567A (en) Integrated photodetecting circuit device
JPS561318A (en) Photoelectric conversion device
JPS54155778A (en) Semiconductor device and its manufacture
JPS577157A (en) Semiconductor device
JPS5522871A (en) Semiconductor light detector
JPS6461964A (en) Semiconductor device
JPS57104279A (en) Photo isolator
JPS6450556A (en) Semiconductor integrated circuit device
JPS5661160A (en) Semiconductor device
JPS5517461A (en) Wavelength detector using photo semiconductor device
JPS52124888A (en) Production of solar battery
JPS5455189A (en) Photo transistor
JPS5687360A (en) Transistor device
JPH0394478A (en) Semiconductor device
JPS55102263A (en) Semiconductor integrated circuit
JPS5661177A (en) Preparation of semiconductor photodetector
JPS5732683A (en) Semiconductor device
JPS55107261A (en) Semiconductor integrated circuit device
JPS55146964A (en) Manufacture of semiconductor device
JPS56125867A (en) Semiconductor device
JPS51117591A (en) Semiconductor photoelectric conversion element
JPS5715466A (en) Semiconductor device