JPS6461964A - Semiconductor device - Google Patents

Abstract

PURPOSE:To prevent crosstalk from occurring and to enable the receiving of light of a wavelength small in its absorption coefficient and to facilitate the forming of an electrode, by forming a first conductivity type semiconductor layer in each recessed part of a semiconductor substrate with a plurality of metha parts and forming a second conductivity type semiconductor layer inside the first conductivity type semiconductor layer and forming a first conductivity type semiconductor layer of high concentration on each metha part. CONSTITUTION:A plurality of recessed parts 7 are formed of metha parts 6 on a semi-insulating semiconductor substrate 5. A first conductivity type semiconductor layer 1 is made to grow on the semiconductor substrate 5. Next a second conductivity type semiconductor layer 2 is formed on a surface of the first conductivity type semiconductor layer 1 formed inside each recessed part 7 on the semiconductor substrate 5. A PN junction part 3 is thus formed. A first conductivity type semiconductor layer 4 of high concentration is formed in the first conductivity type semiconductor layer 1 formed on a top part of the metha part 6 of the semiconductor substrate 5 so that it attains to the metha part 6. Hence, the PN junction part 3 serving as a light- receiving part is completely insulated from its below first conductivity type semiconductor layer 1 by the metha part 6 and the semiconductor layer 4 formed on the metha part, so that crosstalk is prevented from occurring.