JPS51117591A - Semiconductor photoelectric conversion element - Google Patents

Semiconductor photoelectric conversion element

Info

Publication number
JPS51117591A
JPS51117591A JP50042646A JP4264675A JPS51117591A JP S51117591 A JPS51117591 A JP S51117591A JP 50042646 A JP50042646 A JP 50042646A JP 4264675 A JP4264675 A JP 4264675A JP S51117591 A JPS51117591 A JP S51117591A
Authority
JP
Japan
Prior art keywords
photoelectric conversion
conversion element
semiconductor photoelectric
semiconductor layer
light receiving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50042646A
Other languages
Japanese (ja)
Other versions
JPS5640989B2 (en
Inventor
Jun Fukuchi
Takeshi Konuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP50042646A priority Critical patent/JPS51117591A/en
Publication of JPS51117591A publication Critical patent/JPS51117591A/en
Publication of JPS5640989B2 publication Critical patent/JPS5640989B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To improve the photocell conversion effeciency by having a porous semiconductor layer installed on top of a semiconductor layer possessing a PN coupling and further on top of it, haveing a clear electrode formed. The light receiving area is enlarged by having the light receiving surface porous and reflection of the incoming light is prevented.
COPYRIGHT: (C)1976,JPO&Japio
JP50042646A 1975-04-07 1975-04-07 Semiconductor photoelectric conversion element Granted JPS51117591A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50042646A JPS51117591A (en) 1975-04-07 1975-04-07 Semiconductor photoelectric conversion element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50042646A JPS51117591A (en) 1975-04-07 1975-04-07 Semiconductor photoelectric conversion element

Publications (2)

Publication Number Publication Date
JPS51117591A true JPS51117591A (en) 1976-10-15
JPS5640989B2 JPS5640989B2 (en) 1981-09-25

Family

ID=12641765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50042646A Granted JPS51117591A (en) 1975-04-07 1975-04-07 Semiconductor photoelectric conversion element

Country Status (1)

Country Link
JP (1) JPS51117591A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007035068A1 (en) * 2007-07-26 2009-01-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for manufacturing silicon solar cell with selective emitter, involves producing laminar emitter at emitter surface of solar cell substrate and applying corroding barrier on sub ranges of emitter surface
US8586396B2 (en) 2007-07-26 2013-11-19 Universität Konstanz Method for producing a silicon solar cell with a back-etched emitter as well as a corresponding solar cell

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4832946A (en) * 1971-08-31 1973-05-04

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4832946A (en) * 1971-08-31 1973-05-04

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007035068A1 (en) * 2007-07-26 2009-01-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for manufacturing silicon solar cell with selective emitter, involves producing laminar emitter at emitter surface of solar cell substrate and applying corroding barrier on sub ranges of emitter surface
US8586396B2 (en) 2007-07-26 2013-11-19 Universität Konstanz Method for producing a silicon solar cell with a back-etched emitter as well as a corresponding solar cell

Also Published As

Publication number Publication date
JPS5640989B2 (en) 1981-09-25

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