JPS51117591A - Semiconductor photoelectric conversion element - Google Patents
Semiconductor photoelectric conversion elementInfo
- Publication number
- JPS51117591A JPS51117591A JP50042646A JP4264675A JPS51117591A JP S51117591 A JPS51117591 A JP S51117591A JP 50042646 A JP50042646 A JP 50042646A JP 4264675 A JP4264675 A JP 4264675A JP S51117591 A JPS51117591 A JP S51117591A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- conversion element
- semiconductor photoelectric
- semiconductor layer
- light receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To improve the photocell conversion effeciency by having a porous semiconductor layer installed on top of a semiconductor layer possessing a PN coupling and further on top of it, haveing a clear electrode formed. The light receiving area is enlarged by having the light receiving surface porous and reflection of the incoming light is prevented.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50042646A JPS51117591A (en) | 1975-04-07 | 1975-04-07 | Semiconductor photoelectric conversion element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50042646A JPS51117591A (en) | 1975-04-07 | 1975-04-07 | Semiconductor photoelectric conversion element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51117591A true JPS51117591A (en) | 1976-10-15 |
JPS5640989B2 JPS5640989B2 (en) | 1981-09-25 |
Family
ID=12641765
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50042646A Granted JPS51117591A (en) | 1975-04-07 | 1975-04-07 | Semiconductor photoelectric conversion element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51117591A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007035068A1 (en) * | 2007-07-26 | 2009-01-29 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for manufacturing silicon solar cell with selective emitter, involves producing laminar emitter at emitter surface of solar cell substrate and applying corroding barrier on sub ranges of emitter surface |
US8586396B2 (en) | 2007-07-26 | 2013-11-19 | Universität Konstanz | Method for producing a silicon solar cell with a back-etched emitter as well as a corresponding solar cell |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4832946A (en) * | 1971-08-31 | 1973-05-04 |
-
1975
- 1975-04-07 JP JP50042646A patent/JPS51117591A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4832946A (en) * | 1971-08-31 | 1973-05-04 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007035068A1 (en) * | 2007-07-26 | 2009-01-29 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for manufacturing silicon solar cell with selective emitter, involves producing laminar emitter at emitter surface of solar cell substrate and applying corroding barrier on sub ranges of emitter surface |
US8586396B2 (en) | 2007-07-26 | 2013-11-19 | Universität Konstanz | Method for producing a silicon solar cell with a back-etched emitter as well as a corresponding solar cell |
Also Published As
Publication number | Publication date |
---|---|
JPS5640989B2 (en) | 1981-09-25 |
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