JPS5661160A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5661160A
JPS5661160A JP13816879A JP13816879A JPS5661160A JP S5661160 A JPS5661160 A JP S5661160A JP 13816879 A JP13816879 A JP 13816879A JP 13816879 A JP13816879 A JP 13816879A JP S5661160 A JPS5661160 A JP S5661160A
Authority
JP
Japan
Prior art keywords
type
region
layer
regions
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13816879A
Other languages
Japanese (ja)
Inventor
Mitsuo Tone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP13816879A priority Critical patent/JPS5661160A/en
Publication of JPS5661160A publication Critical patent/JPS5661160A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To make compact and inexpensive a semiconductor device by a method wherein a photoelectric conversion element having a P-N junction and an active element used to amplify the electric signal generated in the element are integrated in one and the same semiconductor substrate. CONSTITUTION:A diode 1 used as a photoelectric conversion element and amplifiers 2-6 composed of the plural number of bypoler transistors 10 are formed in one and the same semiconductor substrate 11. In other words, N<+> type buried regions 13 and 14 are formed by diffusion on the surface of a P type Si substrate 11, and an N<-> type layer 12 is grown epitaxially on the whole surface of the substrate including the above regions. The layer 12 is then reduced to layers 12a and 12b in the shape of an island each including the regions 13 and 14 using P type separating regions 15-17. Next, one layer 12b is used as a collector region where a P type base region 18 and an N type emitter region 19 located in the region 18 are formed to constitute an N-P-N transistor. On the other hand, a P type region 29 is formed by diffusion in the other layer 12a to make a diode 1. By so doing, it is possible to obtain a pickup with superior S/N sensitivity.
JP13816879A 1979-10-25 1979-10-25 Semiconductor device Pending JPS5661160A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13816879A JPS5661160A (en) 1979-10-25 1979-10-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13816879A JPS5661160A (en) 1979-10-25 1979-10-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5661160A true JPS5661160A (en) 1981-05-26

Family

ID=15215612

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13816879A Pending JPS5661160A (en) 1979-10-25 1979-10-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5661160A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5418396A (en) * 1992-06-25 1995-05-23 Sanyo Electric Co., Ltd. Optical semiconductor device and fabrication method therefor
US5488251A (en) * 1986-02-28 1996-01-30 Canon Kabushiki Kaisha Semiconductor device and process for producing the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5023794A (en) * 1973-06-30 1975-03-14
JPS5138229A (en) * 1974-09-30 1976-03-30 Hitachi Metals Ltd HAIGASUKAISHUKYOKYUHOHO OYOBI SONOSOCHI

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5023794A (en) * 1973-06-30 1975-03-14
JPS5138229A (en) * 1974-09-30 1976-03-30 Hitachi Metals Ltd HAIGASUKAISHUKYOKYUHOHO OYOBI SONOSOCHI

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5488251A (en) * 1986-02-28 1996-01-30 Canon Kabushiki Kaisha Semiconductor device and process for producing the same
US5418396A (en) * 1992-06-25 1995-05-23 Sanyo Electric Co., Ltd. Optical semiconductor device and fabrication method therefor

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