JPS5661160A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5661160A JPS5661160A JP13816879A JP13816879A JPS5661160A JP S5661160 A JPS5661160 A JP S5661160A JP 13816879 A JP13816879 A JP 13816879A JP 13816879 A JP13816879 A JP 13816879A JP S5661160 A JPS5661160 A JP S5661160A
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- layer
- regions
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 238000006243 chemical reaction Methods 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To make compact and inexpensive a semiconductor device by a method wherein a photoelectric conversion element having a P-N junction and an active element used to amplify the electric signal generated in the element are integrated in one and the same semiconductor substrate. CONSTITUTION:A diode 1 used as a photoelectric conversion element and amplifiers 2-6 composed of the plural number of bypoler transistors 10 are formed in one and the same semiconductor substrate 11. In other words, N<+> type buried regions 13 and 14 are formed by diffusion on the surface of a P type Si substrate 11, and an N<-> type layer 12 is grown epitaxially on the whole surface of the substrate including the above regions. The layer 12 is then reduced to layers 12a and 12b in the shape of an island each including the regions 13 and 14 using P type separating regions 15-17. Next, one layer 12b is used as a collector region where a P type base region 18 and an N type emitter region 19 located in the region 18 are formed to constitute an N-P-N transistor. On the other hand, a P type region 29 is formed by diffusion in the other layer 12a to make a diode 1. By so doing, it is possible to obtain a pickup with superior S/N sensitivity.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13816879A JPS5661160A (en) | 1979-10-25 | 1979-10-25 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13816879A JPS5661160A (en) | 1979-10-25 | 1979-10-25 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5661160A true JPS5661160A (en) | 1981-05-26 |
Family
ID=15215612
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13816879A Pending JPS5661160A (en) | 1979-10-25 | 1979-10-25 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5661160A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5418396A (en) * | 1992-06-25 | 1995-05-23 | Sanyo Electric Co., Ltd. | Optical semiconductor device and fabrication method therefor |
US5488251A (en) * | 1986-02-28 | 1996-01-30 | Canon Kabushiki Kaisha | Semiconductor device and process for producing the same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5023794A (en) * | 1973-06-30 | 1975-03-14 | ||
JPS5138229A (en) * | 1974-09-30 | 1976-03-30 | Hitachi Metals Ltd | HAIGASUKAISHUKYOKYUHOHO OYOBI SONOSOCHI |
-
1979
- 1979-10-25 JP JP13816879A patent/JPS5661160A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5023794A (en) * | 1973-06-30 | 1975-03-14 | ||
JPS5138229A (en) * | 1974-09-30 | 1976-03-30 | Hitachi Metals Ltd | HAIGASUKAISHUKYOKYUHOHO OYOBI SONOSOCHI |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5488251A (en) * | 1986-02-28 | 1996-01-30 | Canon Kabushiki Kaisha | Semiconductor device and process for producing the same |
US5418396A (en) * | 1992-06-25 | 1995-05-23 | Sanyo Electric Co., Ltd. | Optical semiconductor device and fabrication method therefor |
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