JPS5791542A - High frequency transistor device - Google Patents

High frequency transistor device

Info

Publication number
JPS5791542A
JPS5791542A JP55168571A JP16857180A JPS5791542A JP S5791542 A JPS5791542 A JP S5791542A JP 55168571 A JP55168571 A JP 55168571A JP 16857180 A JP16857180 A JP 16857180A JP S5791542 A JPS5791542 A JP S5791542A
Authority
JP
Japan
Prior art keywords
transistor
enclosure
high frequency
transistor device
capacitors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55168571A
Other languages
Japanese (ja)
Inventor
Naotaka Tomita
Shigekazu Hori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55168571A priority Critical patent/JPS5791542A/en
Publication of JPS5791542A publication Critical patent/JPS5791542A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01072—Hafnium [Hf]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19042—Component type being an inductor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lasers (AREA)

Abstract

PURPOSE:To shorten the rising time of a pulse output from a high frequency transistor device by providing an inductor in parallel with a capacitor forming the internal matching circuit at an input side. CONSTITUTION:An input terminal 28 and an output terminal 29 are provided at a transistor enclosure 27, a plurality of capacitors 15-20 are provided in the enclosure 27 with the first electrode connected to the grounding conductor in the enclosure 27, and a plurality of transistors 12 are grouned at the bases. The input terminal 28, output terminal 29, the second electrodes of the capacitors 15- 20 and the electrodes of the transistor 12 are respectively connected via bonding wires 21-25. An emitter electrode 13 and a base electrode 14 are formed correspondingly to the transistor 12. Grounding bonding wires 30-a, 30-b are provided as inductors in parallel with the capacitor 17.
JP55168571A 1980-11-29 1980-11-29 High frequency transistor device Pending JPS5791542A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55168571A JPS5791542A (en) 1980-11-29 1980-11-29 High frequency transistor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55168571A JPS5791542A (en) 1980-11-29 1980-11-29 High frequency transistor device

Publications (1)

Publication Number Publication Date
JPS5791542A true JPS5791542A (en) 1982-06-07

Family

ID=15870503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55168571A Pending JPS5791542A (en) 1980-11-29 1980-11-29 High frequency transistor device

Country Status (1)

Country Link
JP (1) JPS5791542A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05102813A (en) * 1991-10-11 1993-04-23 Toshiba Corp Microwave pulse high output transistor
US6049126A (en) * 1995-12-14 2000-04-11 Nec Corporation Semiconductor package and amplifier employing the same
WO2000075990A1 (en) * 1999-06-07 2000-12-14 Ericsson Inc. High impedance matched rf power transistor
WO2001045171A1 (en) * 1999-12-15 2001-06-21 Ericsson Inc. Ldmos power package with resistive-capacitive stabilizing element
US6653691B2 (en) 2000-11-16 2003-11-25 Silicon Semiconductor Corporation Radio frequency (RF) power devices having faraday shield layers therein
US6759742B2 (en) * 1999-10-12 2004-07-06 The Whitaker Corporation Interchangeable bond-wire interconnects
WO2009002392A2 (en) * 2007-06-22 2008-12-31 Cree, Inc. Rf transistor packages with internal stability network and methods of forming rf transistor packages with internal stability networks
CN102832145A (en) * 2012-08-31 2012-12-19 中国科学院微电子研究所 Packaging method of high frequency internal matching power device
US8592966B2 (en) 2007-06-22 2013-11-26 Cree, Inc. RF transistor packages with internal stability network including intra-capacitor resistors and methods of forming RF transistor packages with internal stability networks including intra-capacitor resistors
CN107293521A (en) * 2017-05-27 2017-10-24 中国电子科技集团公司第十三研究所 The method for realizing the Ω impedance matchings of L-band device 50

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5582515A (en) * 1978-12-19 1980-06-21 Toshiba Corp Transistor amplifier

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5582515A (en) * 1978-12-19 1980-06-21 Toshiba Corp Transistor amplifier

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05102813A (en) * 1991-10-11 1993-04-23 Toshiba Corp Microwave pulse high output transistor
US6049126A (en) * 1995-12-14 2000-04-11 Nec Corporation Semiconductor package and amplifier employing the same
WO2000075990A1 (en) * 1999-06-07 2000-12-14 Ericsson Inc. High impedance matched rf power transistor
US6759742B2 (en) * 1999-10-12 2004-07-06 The Whitaker Corporation Interchangeable bond-wire interconnects
WO2001045171A1 (en) * 1999-12-15 2001-06-21 Ericsson Inc. Ldmos power package with resistive-capacitive stabilizing element
US6653691B2 (en) 2000-11-16 2003-11-25 Silicon Semiconductor Corporation Radio frequency (RF) power devices having faraday shield layers therein
WO2009002392A2 (en) * 2007-06-22 2008-12-31 Cree, Inc. Rf transistor packages with internal stability network and methods of forming rf transistor packages with internal stability networks
WO2009002392A3 (en) * 2007-06-22 2009-02-19 Cree Inc Rf transistor packages with internal stability network and methods of forming rf transistor packages with internal stability networks
US8330265B2 (en) 2007-06-22 2012-12-11 Cree, Inc. RF transistor packages with internal stability network and methods of forming RF transistor packages with internal stability networks
US8592966B2 (en) 2007-06-22 2013-11-26 Cree, Inc. RF transistor packages with internal stability network including intra-capacitor resistors and methods of forming RF transistor packages with internal stability networks including intra-capacitor resistors
CN102832145A (en) * 2012-08-31 2012-12-19 中国科学院微电子研究所 Packaging method of high frequency internal matching power device
CN107293521A (en) * 2017-05-27 2017-10-24 中国电子科技集团公司第十三研究所 The method for realizing the Ω impedance matchings of L-band device 50

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