WO2001045171A1 - Ldmos power package with resistive-capacitive stabilizing element - Google Patents
Ldmos power package with resistive-capacitive stabilizing element Download PDFInfo
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- WO2001045171A1 WO2001045171A1 PCT/US2000/033225 US0033225W WO0145171A1 WO 2001045171 A1 WO2001045171 A1 WO 2001045171A1 US 0033225 W US0033225 W US 0033225W WO 0145171 A1 WO0145171 A1 WO 0145171A1
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- Prior art keywords
- input
- terminal
- terminals
- flange
- capacitor
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- 230000000087 stabilizing effect Effects 0.000 title description 2
- 239000003990 capacitor Substances 0.000 claims abstract description 64
- 230000005540 biological transmission Effects 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000003353 gold alloy Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000005201 scrubbing Methods 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- 206010010144 Completed suicide Diseases 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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Definitions
- the present invention pertains generally to the field of radio frequency (RF) power transistor devices and, more specifically, to methods and apparatus for impedance matching of LDMOS power transistor packages.
- RF radio frequency
- LDMOS metal oxide semiconductor
- a typical LDMOS RF power transistor package (also referred to herein as a "RF power package” or just “power package”) generally comprises a plurality of electrodes formed on a semiconductor die, each electrode comprising a plurality of transistors. The individual transistors of each electrode are connected to respective common input (gate) and output (drain) terminals formed on the surface of the die.
- a common ground (source) terminal substrate is formed on the underlying side of the die.
- the die is attached, e.g., by a known eutectic die attach process, to a metal flange serving as a combined ground current reference, heat spreader and mounting device for the package.
- a thermally conductive, but electrically isolating, e.g., aluminum oxide, "window” substrate is attached to the flange, surrounding the die.
- Respective input and output lead frames are attached, e.g., at opposing ends, to a top surface of the window substrate, electrically isolated from the flange.
- the input and output lead frames are coupled to the respective electrode input and output terminals via respective input and output transmission paths, which may also include one or more impedance matching elements interposed between the respective lead frames and electrode terminals. Impedance matching between circuit elements external to the power package and the respective electrode terminals on the die is crucial to proper operation of the amplifier device, especially at high operating frequencies.
- One known approach for improving impedance control in a FET-based power transistor package is to provide a constant termination impedance in the input transmission path by incorporating input gate resistors into the respective electrodes on the die or, in the alternative, in circuitry external to the transistor device.
- this approach requires re-designing the die mask and/or additional cost and space requirements for the external circuitry.
- a common series resistor is incorporated into an input matching capacitor in the input (gate) transmission path of a LDMOS power package.
- the resistor provides a constant impedance element, as "seen” in either direction in the input transmission path, thereby adding a further impedance control element, without requiring individual gate resistors to be incorporated in the silicon die transistor layout.
- an LDMOS power package includes a conductive flange serving as a relative ground, with a dielectric window substrate attached to, and exposing a portion of, the flange.
- a silicon die is attached to the exposed portion of the flange within the window substrate, the die having a plurality of electrodes formed thereon, the electrodes each having respective input (gate) terminals, output (drain) terminals and a common ground (source) terminal, the ground terminal electrically coupled to the flange.
- An input lead is attached to the window substrate, electrically isolated from the flange, and is electrically coupled to the electrode input terminals via an input transmission path.
- the input transmission path includes a matching capacitor attached to the flange, the input matching capacitor having a first terminal electrically coupled to the input lead and a second terminal electrically coupled to the electrode input terminals.
- the first and second capacitor terminals are separated from the ground flange by a dielectric layer, with the first capacitor terminal electrically coupled to the second capacitor terminal by a resistive path forming a common gate resistor in the input transmission path.
- the resistive path comprises a diffusion layer formed in dielectric layer of the input matching capacitor.
- the resistive path may also be deposited on the dielectric layer of the input matching capacitor between the first and second terminals.
- One advantage of the present invention is that high frequency, LDMOS power package performance can be enhanced with addition of a common series gate resistance in the package itself, without requiring a re-design of an existing silicon die mask. Another advantage is that that common input gate resistance is added without requiring further circuitry external to the transistor package.
- FIG. 1 is a top view of a preferred LDMOS power package constructed in accordance with the present invention, including an input matching capacitor having a resistor formed thereon;
- FIG. 2 is a top view of the input matching capacitor of FIG. 1;
- FIG. 3 is partially cut-away side view of the input matching capacitor of FIG. 1;
- FIG. 4 is a simplified schematic of the power package of FIG. 1;
- FIG. 5 is a top view of an alternate embodiment of the power package of FIG. 1, including a plurality of input matching capacitors;
- FIG. 6 is a simplified schematic of the power package of FIG. 5;
- FIG. 7 is a top view of an further alternate embodiment of the power package of FIG. 1;
- FIG. 8 is a top view of an input matching capacitor having a common resistor formed thereon in the power package of FIG. 7;
- FIG. 9 is partially cut-away side view of the input matching capacitor of FIG. 8; and FIG. 10 is a simplified schematic of the power package of FIG. 7.
- a first preferred LDMOS power package 20 generally includes a conductive mounting flange 22, e.g., made of a copper-tungsten alloy, which serves as a combined relative ground reference, heat spreader and mounting substrate.
- the window substrate 24 has an inner perimeter 28, which defines a window 30 exposing a portion of the mounting flange surface 26.
- a silicon die 32 having a plurality of interdigitated transistor electrodes 34 formed thereon is attached to the top flange surface 26 within the window 30.
- the electrodes 34 have respective input (gate) terminals 36 and output (drain) terminals 38 formed on a top surface 38 of the die 36.
- the electrodes 34 also have a common (source) terminal (40), e.g., made of gold or a gold alloy, formed on the underside of the die 36, which is attached to the flange surface 26, e.g., by ultrasonic scrubbing and/or thermal heating.
- An input lead 42 is attached at one end of a top surface 44 of the window substrate
- the LDMOS power package 20 may have other inputs and/or leads, such as a bias voltage lead, which are not directly related to the present invention and, thus, which are omitted for purposes of simplification.
- a first plurality of conductive bond wires 48 couple the input lead 42 to a first terminal 50 of an input matching capacitor (MOSCAP) 52 attached to the flange surface 26.
- a second plurality of bond wires 54 couple a second terminal 56 of the input MOSCAP 52 to the electrode input (gate) terminals 36 on the die 32.
- the input MOSCAP 52 is preferably conventionally constructed from a silicon wafer 66.
- a thin oxide layer (i.e., silicon dioxide) 70 is formed in the silicon wafer 66, e.g., by exposing the silicon to oxygen and high temperature. Alternately, the layer 70 could be formed by a diffused nitride.
- the respective first and second terminals 56 and 58 are each preferably comprised of a thin, conductive metal layer, such as gold, which are deposited over the silicon dioxide layer 70.
- a further (ground) terminal 68 comprising a thin layer of gold, or a gold alloy, is deposited on the underside of the silicon wafer 66 and attached directly to the flange surface 26, e.g., by ultrasonic scrubbing and/or thermal heating.
- the first capacitor terminal 50 is relatively narrow and, preferably, has a width no greater than is necessary to allow for termination of the plurality of bond wires 48, e.g., 5- 6 mils in a preferred embodiment.
- the second capacitor terminal 56 is significantly greater in width, e.g., 10 to 15 times greater in a preferred embodiment, such that the first terminal 50 contributes very little to the overall capacitance of the input MOSCAP 52 relative to the second terminal 56.
- the MOSCAP 52 reduces, or steps down, the impedance "seen” on the input wires 48. The actual step down in impedance depends on many factors, including the number and length of the respective bond wires 48, and the operating parameters of the power package 120.
- the first and second capacitor terminals 50 and 56 are electrically coupled through a resistor 72 formed by a diffusion of, e.g., platinum suicide, in the exposed silicon dioxide region extending between the first and second terminals 50 and 56.
- the resistor 72 could be formed by could be a deposited layer extending between the respective terminals 50 and 56 on the surface of the silicon dioxide area 70.
- a diffused resistor is preferred as it is generally more reliable than a deposited resistor.
- the resistor 72 which is preferably uniform across the gap extending between the respective first and second capacitor terminals 50 and 56, provides a constant input impedance within the input transmission path of the power package 20.
- input matching of the power package 20 is performed by selection of the value of the input matching MOSCAP 52, which is based on the relative size of the second terminal 56 and depth of the silicon wafer 66, as well as the resistance value of resistor 72 and the inductance of wires 48 and 54, which is based on the number and length of the respective groups of wires.
- a further plurality of bond wires 58 couple the respective electrode output terminals 38 to a top-side terminal 60 of an output matching MOSCAP 62.
- a second terminal (not shown) of the blocking capacitor 62 is coupled to the flange surface 26.
- the output lead frame 46 is coupled to the output blocking capacitor 62 by a still further plurality of bond wires 64. Because the impedance of the respective electrode output terminals 38 is significantly higher than that of the input terminals, the "set-up" value of the output matching MOSCAP 62 will be much less than the "step down" value of input matching MOSCAP 52. In a preferred embodiment, the impedance seen at the input lead
- FIG. 4 shows a simplified schematic representation of the power package 20, wherein the transmission inductance through the respective bond wires is designated by the corresponding reference numbers of the wires in FIG. 1.
- the impedance at the electrode input terminals 36 is relatively low, e.g., less than two ohms in one known application, compared with the input lead impedance, typically 50 ohms, it may be desirable to employ a second input matching
- MOSCAP 74 in the input transmission path of the power package (designated as 20'). In particular, instead of coupling the second terminal 56 of the first input
- the plurality of bond wires couple capacitor terminal 56 to a first terminal 78 of a second input matching MOSCAP 74.
- a second terminal (not shown) of the second input matching MOSCAP 74 is coupled to the flange surface 26.
- a further set of bond wires 76 couple the capacitor terminal 78 to the low impedance electrode input terminals 36.
- MOSCAP 74 further steps down the impedance on the input transmission path - i.e., as “seen” on the respective input wires 54 and 76. Again, the actual step down in impedance between the first input matching MOSCAP 52, second input matching MOSCAP 74 and the electrode input terminals 36 depends on many factors, including the selected number and length of the respective bond wires 54 and 76, and the operating parameters of the device 20'. Because the impedance at the output electrode terminals 38 is relatively higher than at the input terminals 134, only the single output matching MOSCAP 62 is normally employed to "step up" the impedance between the output electrode terminals 38 and the output lead 46.
- FIG. 6 shows a simplified schematic representation of the power package 20', wherein the transmission inductance through the respective bond wires is again designated by the corresponding reference numbers of the wires in FIG. 5.
- the exact location of the common gate resistance need not be adjacent the input lead, but can be suitably positioned anywhere in the input transmission path.
- the location of the common gate resistance is moved in FIG. 7.
- the first plurality of bond wires 48 couple the input lead 42 to the (only) terminal 56' of the first input matching capacitor 52'.
- the second plurality of bond wires 54 couple capacitor terminal 56' to the first terminal 78' of the second input matching MOSCAP 74'.
- the third plurality of bond wires 76 couple a second terminal 80 of the second input matching MOSCAP 74' to the electrode input terminals 36, with the first and second terminals 78' and 80 of MOSCAP 74' electrically coupled by a common gate resistor 82 formed in the MOSCAP surface.
- the second MOSCAP 74' of power package 20" is preferably identical in construction to the MOSCAP 52 of packages 20 and 20', except that the resistor 82 is formed proximate the silicon die side of the input transmission path, ⁇ i.e., with the second terminal 80 is negligible in width compared with terminal 78'.
- FIG. 10 shows a simplified schematic representation of the power package 20", wherein the transmission inductance through the respective bond wires is again designated by the corresponding reference numbers of the wires in FIG. 7.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU22555/01A AU2255501A (en) | 1999-12-15 | 2000-12-06 | Ldmos power package with resistive-capacitive stabilizing element |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US46434199A | 1999-12-15 | 1999-12-15 | |
US09/464,341 | 1999-12-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001045171A1 true WO2001045171A1 (en) | 2001-06-21 |
Family
ID=23843543
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/033225 WO2001045171A1 (en) | 1999-12-15 | 2000-12-06 | Ldmos power package with resistive-capacitive stabilizing element |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2255501A (en) |
TW (1) | TW503554B (en) |
WO (1) | WO2001045171A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI567988B (en) * | 2014-04-21 | 2017-01-21 | 台達電子工業股份有限公司 | Semiconductor device package |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0015709A1 (en) * | 1979-03-10 | 1980-09-17 | Fujitsu Limited | Constructional arrangement for semiconductor devices |
JPS5791542A (en) * | 1980-11-29 | 1982-06-07 | Toshiba Corp | High frequency transistor device |
US4354163A (en) * | 1980-04-30 | 1982-10-12 | Ford Aerospace & Communications Corporation | High voltage buffer amplifier |
US5371405A (en) * | 1992-02-04 | 1994-12-06 | Mitsubishi Denki Kabushiki Kaisha | High-frequency high-power transistor |
-
2000
- 2000-12-06 AU AU22555/01A patent/AU2255501A/en not_active Abandoned
- 2000-12-06 WO PCT/US2000/033225 patent/WO2001045171A1/en active Application Filing
- 2000-12-13 TW TW089126583A patent/TW503554B/en not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0015709A1 (en) * | 1979-03-10 | 1980-09-17 | Fujitsu Limited | Constructional arrangement for semiconductor devices |
US4354163A (en) * | 1980-04-30 | 1982-10-12 | Ford Aerospace & Communications Corporation | High voltage buffer amplifier |
JPS5791542A (en) * | 1980-11-29 | 1982-06-07 | Toshiba Corp | High frequency transistor device |
US5371405A (en) * | 1992-02-04 | 1994-12-06 | Mitsubishi Denki Kabushiki Kaisha | High-frequency high-power transistor |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 006, no. 173 (E - 129) 7 September 1982 (1982-09-07) * |
Also Published As
Publication number | Publication date |
---|---|
TW503554B (en) | 2002-09-21 |
AU2255501A (en) | 2001-06-25 |
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