JPS6447108A - Inner matching type high output transistor - Google Patents

Inner matching type high output transistor

Info

Publication number
JPS6447108A
JPS6447108A JP62203944A JP20394487A JPS6447108A JP S6447108 A JPS6447108 A JP S6447108A JP 62203944 A JP62203944 A JP 62203944A JP 20394487 A JP20394487 A JP 20394487A JP S6447108 A JPS6447108 A JP S6447108A
Authority
JP
Japan
Prior art keywords
electrodes
island
shaped electrodes
outer package
matching circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62203944A
Other languages
Japanese (ja)
Inventor
Takao Sakayori
Takuji Sonoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62203944A priority Critical patent/JPS6447108A/en
Publication of JPS6447108A publication Critical patent/JPS6447108A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Landscapes

  • Microwave Amplifiers (AREA)

Abstract

PURPOSE:To facilitate the manufacture and to improve the characteristic by providing minute island-shaped electrodes between outer package terminals and matching circuit electrodes and connecting a bonding wire to the matching circuit electrode via the minute island-shaped electrodes. CONSTITUTION:FETs elements 1a, 1b are fixed to an outer package metallic part 5 and gate electrodes 2a, 2b are connected to parallel capacitive elements 7a-7h of the island-shaped electrodes provided on a dielectric board 6 by a bonding wire 8. Moreover, the electrodes are connected to the outer package terminal part 10 via the minute island-shaped electrodes 12a, 12b. Drain electrodes 3a, 3b are connected to an output terminal 11 similarly. The length from the outer package terminals 10, 11 to the island-shaped electrodes of the matching circuit is longer as the chip size is larger and the length is enough to be longer resulting in losing the symmetry, but the length of the bonding wire is decreased by providing the minute island-shaped electrodes on the way thereby facilitating the manufacture and improving the characteristic.
JP62203944A 1987-08-17 1987-08-17 Inner matching type high output transistor Pending JPS6447108A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62203944A JPS6447108A (en) 1987-08-17 1987-08-17 Inner matching type high output transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62203944A JPS6447108A (en) 1987-08-17 1987-08-17 Inner matching type high output transistor

Publications (1)

Publication Number Publication Date
JPS6447108A true JPS6447108A (en) 1989-02-21

Family

ID=16482263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62203944A Pending JPS6447108A (en) 1987-08-17 1987-08-17 Inner matching type high output transistor

Country Status (1)

Country Link
JP (1) JPS6447108A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017054893A (en) * 2015-09-08 2017-03-16 株式会社東芝 High-frequency semiconductor device
JP2020536411A (en) * 2017-10-03 2020-12-10 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． Transistor amplifiers with node splits for loop stability and related methods

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017054893A (en) * 2015-09-08 2017-03-16 株式会社東芝 High-frequency semiconductor device
JP2020536411A (en) * 2017-10-03 2020-12-10 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． Transistor amplifiers with node splits for loop stability and related methods

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