JPS5788095A - Vapor phase growing method - Google Patents
Vapor phase growing methodInfo
- Publication number
- JPS5788095A JPS5788095A JP16359980A JP16359980A JPS5788095A JP S5788095 A JPS5788095 A JP S5788095A JP 16359980 A JP16359980 A JP 16359980A JP 16359980 A JP16359980 A JP 16359980A JP S5788095 A JPS5788095 A JP S5788095A
- Authority
- JP
- Japan
- Prior art keywords
- tube
- layer
- concn
- gaseous
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To obtain a desired layer with higher carrier concn. on a high resistance layer with lower carrier concn. with high reproducibility by moving a liner tube contacting with a reaction tube to prevent a change in impurity concn. when a doping layer is formed in vapor phase epitaxial growth.
CONSTITUTION: In a multilayer epitaxial growth for GaAsFET in a Ga-AsCl3-H2 system, a liner tube 12 in a reaction tube 11 is set so that the growing region is well covered, and a GaAs crystal substrate 14 is placed in the tube 12. While suitably keeping the flow rates of a main line 17, a bypass line 16 and a doping line 18 and making the AsCl3 concn. higher, a high resistance buffer layer 13 with lower carrier concn. is grown. At this time, polycrystals 19 deposit on the wall of the tube 12. Gaseous S as an impurity is then fed from the line 18, and an acting layer is grown. Before the gaseous S reaches the substrate 14, the tube 12 is moved behind the substrate 14 at the down stream side. As a result, no gaseous S is captured by the crystals 19, and an acting layer with higher carrier concn. is obtd.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16359980A JPS5788095A (en) | 1980-11-20 | 1980-11-20 | Vapor phase growing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16359980A JPS5788095A (en) | 1980-11-20 | 1980-11-20 | Vapor phase growing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5788095A true JPS5788095A (en) | 1982-06-01 |
Family
ID=15776978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16359980A Pending JPS5788095A (en) | 1980-11-20 | 1980-11-20 | Vapor phase growing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5788095A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59229816A (en) * | 1983-06-13 | 1984-12-24 | Agency Of Ind Science & Technol | Vapor growth apparatus for compound semiconductor |
-
1980
- 1980-11-20 JP JP16359980A patent/JPS5788095A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59229816A (en) * | 1983-06-13 | 1984-12-24 | Agency Of Ind Science & Technol | Vapor growth apparatus for compound semiconductor |
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