JPS5779674A - Multiplex battery cell with amorphous photoresponsiveness - Google Patents
Multiplex battery cell with amorphous photoresponsivenessInfo
- Publication number
- JPS5779674A JPS5779674A JP56140836A JP14083681A JPS5779674A JP S5779674 A JPS5779674 A JP S5779674A JP 56140836 A JP56140836 A JP 56140836A JP 14083681 A JP14083681 A JP 14083681A JP S5779674 A JPS5779674 A JP S5779674A
- Authority
- JP
- Japan
- Prior art keywords
- photoresponsiveness
- amorphous
- battery cell
- multiplex
- multiplex battery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/076—Multiple junction or tandem solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0026—Activation or excitation of reactive gases outside the coating chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1604—Amorphous materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Mechanical Engineering (AREA)
- Electromagnetism (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
- Photoreceptors In Electrophotography (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/185,520 US4342044A (en) | 1978-03-08 | 1980-09-09 | Method for optimizing photoresponsive amorphous alloys and devices |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5779674A true JPS5779674A (en) | 1982-05-18 |
JPS6226196B2 JPS6226196B2 (ja) | 1987-06-08 |
Family
ID=22681321
Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56140831A Pending JPS5778184A (en) | 1980-09-09 | 1981-09-07 | Photoresponse amorphous alloy and method of producing same |
JP56140835A Pending JPS5779673A (en) | 1980-09-09 | 1981-09-07 | Photoresponsive amorphous alloy and method of producing same |
JP56140834A Pending JPS5779672A (en) | 1980-09-09 | 1981-09-07 | Photoresponsive amorphous alloy and method of producing same |
JP56140830A Pending JPS5778183A (en) | 1980-09-09 | 1981-09-07 | Photoresponse amorphous alloy and method of producing same |
JP56140836A Granted JPS5779674A (en) | 1980-09-09 | 1981-09-07 | Multiplex battery cell with amorphous photoresponsiveness |
Family Applications Before (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56140831A Pending JPS5778184A (en) | 1980-09-09 | 1981-09-07 | Photoresponse amorphous alloy and method of producing same |
JP56140835A Pending JPS5779673A (en) | 1980-09-09 | 1981-09-07 | Photoresponsive amorphous alloy and method of producing same |
JP56140834A Pending JPS5779672A (en) | 1980-09-09 | 1981-09-07 | Photoresponsive amorphous alloy and method of producing same |
JP56140830A Pending JPS5778183A (en) | 1980-09-09 | 1981-09-07 | Photoresponse amorphous alloy and method of producing same |
Country Status (18)
Country | Link |
---|---|
US (1) | US4342044A (ja) |
JP (5) | JPS5778184A (ja) |
KR (1) | KR860002031B1 (ja) |
AU (1) | AU541974B2 (ja) |
BR (1) | BR8105745A (ja) |
CA (1) | CA1192818A (ja) |
DE (1) | DE3135393C2 (ja) |
ES (1) | ES505266A0 (ja) |
FR (1) | FR2490016B1 (ja) |
GB (1) | GB2083702B (ja) |
IE (1) | IE52205B1 (ja) |
IL (1) | IL63752A (ja) |
IN (1) | IN157589B (ja) |
IT (1) | IT1195053B (ja) |
NL (1) | NL190256C (ja) |
PH (2) | PH19596A (ja) |
SE (1) | SE455553B (ja) |
ZA (5) | ZA815985B (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58128778A (ja) * | 1982-01-28 | 1983-08-01 | Seiko Epson Corp | 半導体装置 |
JPS5961078A (ja) * | 1982-09-29 | 1984-04-07 | Sanyo Electric Co Ltd | 光起電力装置の製造方法 |
JPS59124772A (ja) * | 1982-12-29 | 1984-07-18 | Yoshihiro Hamakawa | 結晶系半導体とアモルフアス半導体とのヘテロ接合光起電力素子 |
JPS59202673A (ja) * | 1983-04-27 | 1984-11-16 | ア−ルシ−エ− コ−ポレ−ション | 重畳型光検知器 |
JPS6046079A (ja) * | 1983-08-23 | 1985-03-12 | Daihen Corp | 光起電力素子の製造方法 |
JPS60100485A (ja) * | 1983-10-06 | 1985-06-04 | エクソン リサ−チ アンド エンジニアリング カンパニ− | 半導体装置 |
JPS60107872A (ja) * | 1983-11-16 | 1985-06-13 | Kanegafuchi Chem Ind Co Ltd | 光起電力装置 |
JPH0613638A (ja) * | 1983-04-15 | 1994-01-21 | Energy Conversion Devices Inc | 光起電力装置 |
Families Citing this family (92)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4492810A (en) * | 1978-03-08 | 1985-01-08 | Sovonics Solar Systems | Optimized doped and band gap adjusted photoresponsive amorphous alloys and devices |
IL61678A (en) * | 1979-12-13 | 1984-04-30 | Energy Conversion Devices Inc | Programmable cell and programmable electronic arrays comprising such cells |
US4400409A (en) * | 1980-05-19 | 1983-08-23 | Energy Conversion Devices, Inc. | Method of making p-doped silicon films |
US4522663A (en) * | 1980-09-09 | 1985-06-11 | Sovonics Solar Systems | Method for optimizing photoresponsive amorphous alloys and devices |
GB2083701B (en) * | 1980-09-09 | 1985-09-04 | Energy Conversion Devices Inc | Graded bandgap amorphous semiconductors |
NL8104138A (nl) * | 1980-09-09 | 1982-04-01 | Energy Conversion Devices Inc | Amorfe meercellige fotoresponsie-inrichting. |
GB2086135B (en) * | 1980-09-30 | 1985-08-21 | Nippon Telegraph & Telephone | Electrode and semiconductor device provided with the electrode |
JPS5772370A (en) * | 1980-10-23 | 1982-05-06 | Canon Inc | Photoelectric converter |
US4499557A (en) * | 1980-10-28 | 1985-02-12 | Energy Conversion Devices, Inc. | Programmable cell for use in programmable electronic arrays |
US4891074A (en) * | 1980-11-13 | 1990-01-02 | Energy Conversion Devices, Inc. | Multiple cell photoresponsive amorphous alloys and devices |
US4441113A (en) * | 1981-02-13 | 1984-04-03 | Energy Conversion Devices, Inc. | P-Type semiconductor material having a wide band gap |
JPS57160123A (en) * | 1981-03-30 | 1982-10-02 | Hitachi Ltd | Semiconductor device |
US4523214A (en) * | 1981-07-03 | 1985-06-11 | Fuji Photo Film Co., Ltd. | Solid state image pickup device utilizing microcrystalline and amorphous silicon |
US4407710A (en) * | 1981-10-15 | 1983-10-04 | Exxon Research And Engineering Co. | Hybrid method of making an amorphous silicon P-I-N semiconductor device |
US4379943A (en) * | 1981-12-14 | 1983-04-12 | Energy Conversion Devices, Inc. | Current enhanced photovoltaic device |
JPS58192044A (ja) * | 1982-05-06 | 1983-11-09 | Konishiroku Photo Ind Co Ltd | 感光体 |
JPS5955077A (ja) * | 1982-09-22 | 1984-03-29 | Sanyo Electric Co Ltd | 光起電力装置 |
JPS5954276A (ja) * | 1982-09-22 | 1984-03-29 | Sanyo Electric Co Ltd | 光起電力装置 |
JPS5954274A (ja) * | 1982-09-22 | 1984-03-29 | Sanyo Electric Co Ltd | 光起電力装置 |
US4520039A (en) * | 1982-09-23 | 1985-05-28 | Sovonics Solar Systems | Compositionally varied materials and method for synthesizing the materials |
US4490733A (en) * | 1982-10-15 | 1984-12-25 | Sperry Corporation | Josephson device with tunneling barrier having low density of localized states and enhanced figures of merit |
NL8204056A (nl) * | 1982-10-21 | 1984-05-16 | Oce Nederland Bv | Fotogeleidend element voor toepassing in elektrofotografische kopieerprocessen. |
JPH0588390A (ja) * | 1982-11-01 | 1993-04-09 | Kanegafuchi Chem Ind Co Ltd | 感光体用半導体素子 |
JPS5983916A (ja) * | 1982-11-01 | 1984-05-15 | Kanegafuchi Chem Ind Co Ltd | アモルフアス多元系半導体 |
JPH077843B2 (ja) * | 1982-11-01 | 1995-01-30 | 鐘淵化学工業株式会社 | アモルフアス多元系半導体素子 |
JPS5990959A (ja) * | 1982-11-16 | 1984-05-25 | Sanyo Electric Co Ltd | アモルフアスシリコン電界効果型トランジスタ |
GB2137810B (en) * | 1983-03-08 | 1986-10-22 | Agency Ind Science Techn | A solar cell of amorphous silicon |
DE3308269A1 (de) * | 1983-03-09 | 1984-09-13 | Licentia Patent-Verwaltungs-Gmbh | Solarzelle |
JPH0614553B2 (ja) * | 1983-04-26 | 1994-02-23 | 日本電装株式会社 | アモルファス炭化シリコン系半導体およびその製造方法 |
JPS59204274A (ja) * | 1983-05-06 | 1984-11-19 | Seiko Instr & Electronics Ltd | 薄膜トランジスタ |
US4532198A (en) * | 1983-05-09 | 1985-07-30 | Canon Kabushiki Kaisha | Photoconductive member |
ES8602301A1 (es) * | 1983-07-18 | 1985-11-01 | Energy Conversion Devices Inc | Una aleacion amorfa mejorada de separacion de bandas estrecha, para aplicaciones fotovoltaicas |
JPS6046078A (ja) * | 1983-08-23 | 1985-03-12 | Daihen Corp | 光起電力素子及びその製造方法 |
US4569697A (en) * | 1983-08-26 | 1986-02-11 | Energy Conversion Devices, Inc. | Method of forming photovoltaic quality amorphous alloys by passivating defect states |
JPH0658970B2 (ja) * | 1983-08-31 | 1994-08-03 | 工業技術院長 | 半導体装置 |
JPS6062166A (ja) * | 1983-09-14 | 1985-04-10 | Kanegafuchi Chem Ind Co Ltd | 光導電材料 |
US4860069A (en) * | 1983-09-24 | 1989-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Non-single-cry stal semiconductor light emitting device |
JPS60152971A (ja) * | 1984-01-20 | 1985-08-12 | Fuji Electric Corp Res & Dev Ltd | 半導体放射線検出器 |
JPS60214572A (ja) * | 1984-04-11 | 1985-10-26 | Matsushita Electric Ind Co Ltd | 薄膜太陽電池およびその製造方法 |
US4547621A (en) * | 1984-06-25 | 1985-10-15 | Sovonics Solar Systems | Stable photovoltaic devices and method of producing same |
JPS61133676A (ja) * | 1984-12-03 | 1986-06-20 | Showa Alum Corp | a−Si太陽電池用基板 |
US4728998A (en) * | 1984-09-06 | 1988-03-01 | Fairchild Semiconductor Corporation | CMOS circuit having a reduced tendency to latch |
US4603471A (en) * | 1984-09-06 | 1986-08-05 | Fairchild Semiconductor Corporation | Method for making a CMOS circuit having a reduced tendency to latch by controlling the band-gap of source and drain regions |
US4849315A (en) * | 1985-01-21 | 1989-07-18 | Xerox Corporation | Processes for restoring hydrogenated and halogenated amorphous silicon imaging members |
JPS61232685A (ja) * | 1985-04-09 | 1986-10-16 | Agency Of Ind Science & Technol | アモルフアスシリコン太陽電池およびその製造方法 |
JPH0624238B2 (ja) * | 1985-04-16 | 1994-03-30 | キヤノン株式会社 | フォトセンサアレイの製造方法 |
JPS62111477A (ja) * | 1985-11-09 | 1987-05-22 | Agency Of Ind Science & Technol | アモルフアスシリコン太陽電池 |
GB2185758B (en) * | 1985-12-28 | 1990-09-05 | Canon Kk | Method for forming deposited film |
US4725889A (en) * | 1986-07-15 | 1988-02-16 | Ovonic Imaging Systems, Inc. | Photosensitive line imager utilizing a movable scanning arm |
JPS6384075A (ja) * | 1986-09-26 | 1988-04-14 | Sanyo Electric Co Ltd | 光起電力装置 |
JPH07105516B2 (ja) * | 1988-11-05 | 1995-11-13 | 太陽誘電株式会社 | 非晶質半導体太陽電池 |
US5180690A (en) * | 1988-12-14 | 1993-01-19 | Energy Conversion Devices, Inc. | Method of forming a layer of doped crystalline semiconductor alloy material |
JP2647969B2 (ja) * | 1989-06-20 | 1997-08-27 | 三洋電機株式会社 | 光起電力装置 |
JP2999280B2 (ja) * | 1991-02-22 | 2000-01-17 | キヤノン株式会社 | 光起電力素子 |
US5246506A (en) * | 1991-07-16 | 1993-09-21 | Solarex Corporation | Multijunction photovoltaic device and fabrication method |
US6114739A (en) * | 1998-10-19 | 2000-09-05 | Agilent Technologies | Elevated pin diode active pixel sensor which includes a patterned doped semiconductor electrode |
US6774300B2 (en) * | 2001-04-27 | 2004-08-10 | Adrena, Inc. | Apparatus and method for photovoltaic energy production based on internal charge emission in a solid-state heterostructure |
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- 1981-09-07 KR KR1019810003326A patent/KR860002031B1/ko active
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- 1981-09-07 GB GB8126965A patent/GB2083702B/en not_active Expired
- 1981-09-07 PH PH26164A patent/PH19596A/en unknown
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JPS58128778A (ja) * | 1982-01-28 | 1983-08-01 | Seiko Epson Corp | 半導体装置 |
JPS5961078A (ja) * | 1982-09-29 | 1984-04-07 | Sanyo Electric Co Ltd | 光起電力装置の製造方法 |
JPS59124772A (ja) * | 1982-12-29 | 1984-07-18 | Yoshihiro Hamakawa | 結晶系半導体とアモルフアス半導体とのヘテロ接合光起電力素子 |
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JPS59202673A (ja) * | 1983-04-27 | 1984-11-16 | ア−ルシ−エ− コ−ポレ−ション | 重畳型光検知器 |
JPS6046079A (ja) * | 1983-08-23 | 1985-03-12 | Daihen Corp | 光起電力素子の製造方法 |
JPS60100485A (ja) * | 1983-10-06 | 1985-06-04 | エクソン リサ−チ アンド エンジニアリング カンパニ− | 半導体装置 |
JPS60107872A (ja) * | 1983-11-16 | 1985-06-13 | Kanegafuchi Chem Ind Co Ltd | 光起電力装置 |
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