JPS5511329A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5511329A
JPS5511329A JP8346778A JP8346778A JPS5511329A JP S5511329 A JPS5511329 A JP S5511329A JP 8346778 A JP8346778 A JP 8346778A JP 8346778 A JP8346778 A JP 8346778A JP S5511329 A JPS5511329 A JP S5511329A
Authority
JP
Japan
Prior art keywords
semiconductor
silicon
single crystal
energy band
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8346778A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP8346778A priority Critical patent/JPS5511329A/en
Priority to US06/055,650 priority patent/US4254429A/en
Publication of JPS5511329A publication Critical patent/JPS5511329A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

PURPOSE: To make it possible to vary energy band continuously, by providing a non-single crystal semiconductor containing an additive capable of varying energy band, on a non-single crystal semiconductor having one conducting type.
CONSTITUTION: Amorphous or polycrystalline non-single crystal film is formed on a semiconductor or insulator by using a material which becomes a semiconductor, such as silicon, silane, dichlorosilane, and other silified gas. Next, on top of this is formed a non-sigle crystal film consisting of silicon to which hydrogen, heavy hydrogen, or a hologen compound such as of chlorine. These substances bond with the unpaired bonding hands of silicon and suppress the occurrence of re-bonding center and perform neutralization electrically. Further, carbon, nitrogen and oxygen are equally dispersed and added to the semiconductor. As a result, there is no specific boundary level, and the energy band assumes continuity or smooth discontinuity. For semiconductor material, germanium, silicon carbide, or compound semiconductor, besides silicon, may be used.
COPYRIGHT: (C)1980,JPO&Japio
JP8346778A 1978-07-08 1978-07-08 Semiconductor device Pending JPS5511329A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8346778A JPS5511329A (en) 1978-07-08 1978-07-08 Semiconductor device
US06/055,650 US4254429A (en) 1978-07-08 1979-07-09 Hetero junction semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8346778A JPS5511329A (en) 1978-07-08 1978-07-08 Semiconductor device

Related Child Applications (4)

Application Number Title Priority Date Filing Date
JP59051687A Division JPS6041269A (en) 1984-03-16 1984-03-16 Semiconductor device
JP59051686A Division JPS59197177A (en) 1984-03-16 1984-03-16 Semiconductor device
JP59051685A Division JPS59197127A (en) 1984-03-16 1984-03-16 Manufacture of semiconductor device
JP62202872A Division JPS63184323A (en) 1987-08-14 1987-08-14 Formation of semiconductor film

Publications (1)

Publication Number Publication Date
JPS5511329A true JPS5511329A (en) 1980-01-26

Family

ID=13803265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8346778A Pending JPS5511329A (en) 1978-07-08 1978-07-08 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5511329A (en)

Cited By (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56162883A (en) * 1980-05-19 1981-12-15 Shunpei Yamazaki Semiconductor device
JPS5779674A (en) * 1980-09-09 1982-05-18 Energy Conversion Devices Inc Multiplex battery cell with amorphous photoresponsiveness
JPS5790933A (en) * 1980-11-27 1982-06-05 Seiko Epson Corp Manufacture of amorphous semiconductor film
JPS57124482A (en) * 1981-01-27 1982-08-03 Nippon Telegr & Teleph Corp <Ntt> Solar cell
JPS5867073A (en) * 1981-10-19 1983-04-21 Agency Of Ind Science & Technol Solar battery
JPS5868046U (en) * 1981-11-02 1983-05-09 工業技術院長 photovoltaic element
JPS5884465A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPS5884466A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPS5884464A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPS5893385A (en) * 1981-11-30 1983-06-03 Canon Inc Photoconductive member
JPS58106876A (en) * 1981-12-19 1983-06-25 Tokyo Denki Daigaku Photoelectric transducer
JPS58215083A (en) * 1982-06-08 1983-12-14 Kanegafuchi Chem Ind Co Ltd Hetero-junction photoelectric element and device therefor
JPS5935488A (en) * 1982-08-24 1984-02-27 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS5986053A (en) * 1982-11-09 1984-05-18 Seiko Epson Corp Photosensitive drum
JPS59211267A (en) * 1983-05-17 1984-11-30 Toshiba Corp Hetero junction bipolar transistor
JPS6030180A (en) * 1983-07-28 1985-02-15 Matsushita Electric Ind Co Ltd Amorphous thin film photovoltaic element
JPS6041269A (en) * 1984-03-16 1985-03-04 Shunpei Yamazaki Semiconductor device
JPS6091679A (en) * 1983-09-21 1985-05-23 ア−ルシ−エ−　コ−ポレ−ション Photoelectric device
JPS60249376A (en) * 1984-04-27 1985-12-10 スコツト・ウイードマン Improved photocell
JPS6190476A (en) * 1984-10-09 1986-05-08 Sanyo Electric Co Ltd Photovoltaic device
JPS61244075A (en) * 1985-04-23 1986-10-30 Ricoh Co Ltd Amorphous silicon photoelectric conversion element
JPS61244072A (en) * 1985-04-22 1986-10-30 Ricoh Co Ltd Amorphous silicon photoelectric conversion element
JPS62162367A (en) * 1986-11-19 1987-07-18 Semiconductor Energy Lab Co Ltd Composite having carbon coat
JPH0242731A (en) * 1988-08-02 1990-02-13 Nkk Corp Semiconductor device and manufacture thereof
US4982251A (en) * 1982-01-19 1991-01-01 Canon Kabushiki Kaisha Semiconductor element
JPH03227575A (en) * 1990-09-14 1991-10-08 Semiconductor Energy Lab Co Ltd Photoelectric conversion device
JPH0597412A (en) * 1982-11-01 1993-04-20 Kanegafuchi Chem Ind Co Ltd Amorphous multicomponent semiconductor device
JPH05257311A (en) * 1992-08-28 1993-10-08 Seiko Epson Corp Photosensitive drum
US5262350A (en) * 1980-06-30 1993-11-16 Semiconductor Energy Laboratory Co., Ltd. Forming a non single crystal semiconductor layer by using an electric current
JPH07169985A (en) * 1994-10-27 1995-07-04 Semiconductor Energy Lab Co Ltd Semiconductor device
US5543636A (en) * 1984-05-18 1996-08-06 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor
JPH08274361A (en) * 1996-02-05 1996-10-18 Semiconductor Energy Lab Co Ltd Semiconductor device
US5573601A (en) * 1989-10-17 1996-11-12 Canon Kabushiki Kaisha Pin amorphous silicon photovoltaic element with counter-doped intermediate layer
US5591987A (en) * 1980-03-03 1997-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor MIS field effect transistor with semi-amorphous semiconductor material
US5821559A (en) * 1991-02-16 1998-10-13 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5859445A (en) * 1990-11-20 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device including thin film transistors having spoiling impurities added thereto
US5859443A (en) * 1980-06-30 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US5894151A (en) * 1992-02-25 1999-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having reduced leakage current
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
US6028333A (en) * 1991-02-16 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
US6043105A (en) * 1985-05-07 2000-03-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor sensitive devices
US6180991B1 (en) 1982-12-23 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of phosphorous
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6326642B1 (en) 1992-05-29 2001-12-04 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
US6337731B1 (en) 1992-04-28 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6346716B1 (en) 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
US6355941B1 (en) * 1980-06-30 2002-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US6693681B1 (en) 1992-04-28 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6709907B1 (en) 1992-02-25 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
US6808976B1 (en) 1998-11-25 2004-10-26 Micron Technology, Inc. Device and method for protecting against oxidation of a conductive layer in said device
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US6900463B1 (en) 1980-06-30 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6972452B2 (en) 1998-11-25 2005-12-06 Micron Technology, Inc. Device and method for protecting against oxidation of a conductive layer in said device
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer

Cited By (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5591987A (en) * 1980-03-03 1997-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor MIS field effect transistor with semi-amorphous semiconductor material
JPS56162883A (en) * 1980-05-19 1981-12-15 Shunpei Yamazaki Semiconductor device
US6355941B1 (en) * 1980-06-30 2002-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US5859443A (en) * 1980-06-30 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US5262350A (en) * 1980-06-30 1993-11-16 Semiconductor Energy Laboratory Co., Ltd. Forming a non single crystal semiconductor layer by using an electric current
US6900463B1 (en) 1980-06-30 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JPS5779674A (en) * 1980-09-09 1982-05-18 Energy Conversion Devices Inc Multiplex battery cell with amorphous photoresponsiveness
JPS6226196B2 (en) * 1980-09-09 1987-06-08 Enaajii Konbaajon Debaisesu Inc
JPS5790933A (en) * 1980-11-27 1982-06-05 Seiko Epson Corp Manufacture of amorphous semiconductor film
JPS57124482A (en) * 1981-01-27 1982-08-03 Nippon Telegr & Teleph Corp <Ntt> Solar cell
JPS6330789B2 (en) * 1981-10-19 1988-06-21 Kogyo Gijutsuin
JPS5867073A (en) * 1981-10-19 1983-04-21 Agency Of Ind Science & Technol Solar battery
JPS629747Y2 (en) * 1981-11-02 1987-03-06
JPS5868046U (en) * 1981-11-02 1983-05-09 工業技術院長 photovoltaic element
JPS5884465A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPH021366B2 (en) * 1981-11-13 1990-01-11 Canon Kk
JPH021365B2 (en) * 1981-11-13 1990-01-11 Canon Kk
JPS5884464A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPS5884466A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPH021367B2 (en) * 1981-11-13 1990-01-11 Canon Kk
JPH0376035B2 (en) * 1981-11-30 1991-12-04 Canon Kk
JPS5893385A (en) * 1981-11-30 1983-06-03 Canon Inc Photoconductive member
JPS58106876A (en) * 1981-12-19 1983-06-25 Tokyo Denki Daigaku Photoelectric transducer
US4982251A (en) * 1982-01-19 1991-01-01 Canon Kabushiki Kaisha Semiconductor element
JPS58215083A (en) * 1982-06-08 1983-12-14 Kanegafuchi Chem Ind Co Ltd Hetero-junction photoelectric element and device therefor
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
JPS5935488A (en) * 1982-08-24 1984-02-27 Semiconductor Energy Lab Co Ltd Semiconductor device
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
JPH0597412A (en) * 1982-11-01 1993-04-20 Kanegafuchi Chem Ind Co Ltd Amorphous multicomponent semiconductor device
JPS5986053A (en) * 1982-11-09 1984-05-18 Seiko Epson Corp Photosensitive drum
US6180991B1 (en) 1982-12-23 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of phosphorous
US6346716B1 (en) 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
JPH0315353B2 (en) * 1983-05-17 1991-02-28 Tokyo Shibaura Electric Co
JPS59211267A (en) * 1983-05-17 1984-11-30 Toshiba Corp Hetero junction bipolar transistor
JPS6030180A (en) * 1983-07-28 1985-02-15 Matsushita Electric Ind Co Ltd Amorphous thin film photovoltaic element
US6503771B1 (en) 1983-08-22 2003-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectrically sensitive device
JPH07254720A (en) * 1983-09-21 1995-10-03 Rca Corp Photoelectric device
JPS6091679A (en) * 1983-09-21 1985-05-23 ア−ルシ−エ−　コ−ポレ−ション Photoelectric device
JPS6041269A (en) * 1984-03-16 1985-03-04 Shunpei Yamazaki Semiconductor device
JPS60249376A (en) * 1984-04-27 1985-12-10 スコツト・ウイードマン Improved photocell
US6635520B1 (en) 1984-05-18 2003-10-21 Semiconductor Energy Laboratory Co., Ltd. Operation method of semiconductor devices
US5543636A (en) * 1984-05-18 1996-08-06 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor
US6660574B1 (en) 1984-05-18 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Method of forming a semiconductor device including recombination center neutralizer
US6680486B1 (en) 1984-05-18 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
US6734499B1 (en) 1984-05-18 2004-05-11 Semiconductor Energy Laboratory Co., Ltd. Operation method of semiconductor devices
US6221701B1 (en) 1984-05-18 2001-04-24 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
JPS6190476A (en) * 1984-10-09 1986-05-08 Sanyo Electric Co Ltd Photovoltaic device
JPS61244072A (en) * 1985-04-22 1986-10-30 Ricoh Co Ltd Amorphous silicon photoelectric conversion element
JPS61244075A (en) * 1985-04-23 1986-10-30 Ricoh Co Ltd Amorphous silicon photoelectric conversion element
US6043105A (en) * 1985-05-07 2000-03-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor sensitive devices
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer
JPS62162367A (en) * 1986-11-19 1987-07-18 Semiconductor Energy Lab Co Ltd Composite having carbon coat
JPH0242731A (en) * 1988-08-02 1990-02-13 Nkk Corp Semiconductor device and manufacture thereof
US5573601A (en) * 1989-10-17 1996-11-12 Canon Kabushiki Kaisha Pin amorphous silicon photovoltaic element with counter-doped intermediate layer
JPH0558271B2 (en) * 1990-09-14 1993-08-26 Handotai Energy Kenkyusho
JPH03227575A (en) * 1990-09-14 1991-10-08 Semiconductor Energy Lab Co Ltd Photoelectric conversion device
US6011277A (en) * 1990-11-20 2000-01-04 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
US5859445A (en) * 1990-11-20 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device including thin film transistors having spoiling impurities added thereto
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US6023075A (en) * 1990-12-25 2000-02-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5821559A (en) * 1991-02-16 1998-10-13 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
US6028333A (en) * 1991-02-16 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
US5894151A (en) * 1992-02-25 1999-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having reduced leakage current
US7148542B2 (en) 1992-02-25 2006-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of forming the same
US7649227B2 (en) 1992-02-25 2010-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of forming the same
US6709907B1 (en) 1992-02-25 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
US6693681B1 (en) 1992-04-28 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US7554616B1 (en) 1992-04-28 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6337731B1 (en) 1992-04-28 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6326642B1 (en) 1992-05-29 2001-12-04 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
JPH05257311A (en) * 1992-08-28 1993-10-08 Seiko Epson Corp Photosensitive drum
JPH07169985A (en) * 1994-10-27 1995-07-04 Semiconductor Energy Lab Co Ltd Semiconductor device
JPH08274361A (en) * 1996-02-05 1996-10-18 Semiconductor Energy Lab Co Ltd Semiconductor device
US6972452B2 (en) 1998-11-25 2005-12-06 Micron Technology, Inc. Device and method for protecting against oxidation of a conductive layer in said device
US6808976B1 (en) 1998-11-25 2004-10-26 Micron Technology, Inc. Device and method for protecting against oxidation of a conductive layer in said device
US7041550B1 (en) * 1998-11-25 2006-05-09 Micron Technology, Inc. Device and method for protecting against oxidation of a conductive layer in said device
US7049191B1 (en) 1998-11-25 2006-05-23 Micron Technology, Inc. Method for protecting against oxidation of a conductive layer in said device
US7067861B1 (en) 1998-11-25 2006-06-27 Micron Technology, Inc. Device and method for protecting against oxidation of a conductive layer in said device
US7094657B1 (en) 1998-11-25 2006-08-22 Micron Technology, Inc. Method for protecting against oxidation of a conductive layer in said device
US6924188B1 (en) 1998-11-25 2005-08-02 Micron Technology, Inc. Device and method for protecting against oxidation of a conductive layer in said device
US6916699B1 (en) 1998-11-25 2005-07-12 Micron Technology, Inc. Device and method for protecting against oxidation of a conductive layer in said device
US6852622B1 (en) 1998-11-25 2005-02-08 Micron Technology, Inc. Device and method for protecting against oxidation of a conductive layer in said device

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