JPS5511397A - Semiconductor device with continuous connection and its production method - Google Patents

Semiconductor device with continuous connection and its production method

Info

Publication number
JPS5511397A
JPS5511397A JP7025279A JP7025279A JPS5511397A JP S5511397 A JPS5511397 A JP S5511397A JP 7025279 A JP7025279 A JP 7025279A JP 7025279 A JP7025279 A JP 7025279A JP S5511397 A JPS5511397 A JP S5511397A
Authority
JP
Japan
Prior art keywords
lattice
crystal
hetro
connecter
coupled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7025279A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP7025279A priority Critical patent/JPS5511397A/en
Publication of JPS5511397A publication Critical patent/JPS5511397A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To reduce misalignment of crystal lattice at a hetro juncture for its improvement by changing an energy band.
CONSTITUTION: When p type or n type semeconductor is formed by mixing an impurity p, Asor B into non-crystal films of amorphous or multi crystal-structured Si, hologen compounds such as H, F or Cl are attached with a concentration of 2∼200%. They are connected to a non-coupled connecter O to reduce a reconnection-centered occurrence and avoid an electrically neutral (inactive) renotch and a spike. Then with a use of CH4, NH4 and H2O, C, N and O are diffused equally and attached to the semiconductor so as not to form a cluster in it. Such continuous change of the energy band can take away the non-coupled connecter inherent due to a lattice disarrangement at the necessary field surface of a hetro connection and can also take away the lattice defect-based field surface semi-position.
COPYRIGHT: (C)1980,JPO&Japio
JP7025279A 1979-06-05 1979-06-05 Semiconductor device with continuous connection and its production method Pending JPS5511397A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7025279A JPS5511397A (en) 1979-06-05 1979-06-05 Semiconductor device with continuous connection and its production method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7025279A JPS5511397A (en) 1979-06-05 1979-06-05 Semiconductor device with continuous connection and its production method

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP8346878A Division JPS5511330A (en) 1978-07-08 1978-07-08 Semiconductor device having continuous junction

Publications (1)

Publication Number Publication Date
JPS5511397A true JPS5511397A (en) 1980-01-26

Family

ID=13426176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7025279A Pending JPS5511397A (en) 1979-06-05 1979-06-05 Semiconductor device with continuous connection and its production method

Country Status (1)

Country Link
JP (1) JPS5511397A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5778183A (en) * 1980-09-09 1982-05-15 Energy Conversion Devices Inc Photoresponse amorphous alloy and method of producing same
JPS5854680A (en) * 1981-09-29 1983-03-31 Agency Of Ind Science & Technol Photovoltaic power device
JPS58134482A (en) * 1982-02-05 1983-08-10 Agency Of Ind Science & Technol Photovoltaic device
JPS5948922A (en) * 1982-09-14 1984-03-21 Fuji Electric Corp Res & Dev Ltd Amorphous semiconductor device
JPS59101880A (en) * 1982-12-03 1984-06-12 Fuji Electric Corp Res & Dev Ltd Thin film solar battery
JPS604211A (en) * 1983-06-22 1985-01-10 Toa Nenryo Kogyo Kk Amorphous silicon semiconductor thin film and manufacture of the same
JPS6031222A (en) * 1983-07-29 1985-02-18 Toa Nenryo Kogyo Kk Amorphous silicon semiconductor thin film and manufacture of the same
JPS63314874A (en) * 1987-06-17 1988-12-22 Matsushita Electric Ind Co Ltd Solar battery power supply
JPH06282088A (en) * 1993-12-22 1994-10-07 Semiconductor Energy Lab Co Ltd Production of photosensitive body
JPH06282087A (en) * 1993-12-22 1994-10-07 Semiconductor Energy Lab Co Ltd Electronic exposure device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5216990A (en) * 1975-07-28 1977-02-08 Rca Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5216990A (en) * 1975-07-28 1977-02-08 Rca Corp Semiconductor device

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5779673A (en) * 1980-09-09 1982-05-18 Energy Conversion Devices Inc Photoresponsive amorphous alloy and method of producing same
JPS5778183A (en) * 1980-09-09 1982-05-15 Energy Conversion Devices Inc Photoresponse amorphous alloy and method of producing same
JPS5854680A (en) * 1981-09-29 1983-03-31 Agency Of Ind Science & Technol Photovoltaic power device
JPS6250069B2 (en) * 1982-02-05 1987-10-22 Kogyo Gijutsuin
JPS58134482A (en) * 1982-02-05 1983-08-10 Agency Of Ind Science & Technol Photovoltaic device
JPS5948922A (en) * 1982-09-14 1984-03-21 Fuji Electric Corp Res & Dev Ltd Amorphous semiconductor device
JPH0376020B2 (en) * 1982-09-14 1991-12-04 Fuji Denki Sogo Kenkyusho Kk
JPS59101880A (en) * 1982-12-03 1984-06-12 Fuji Electric Corp Res & Dev Ltd Thin film solar battery
JPS604211A (en) * 1983-06-22 1985-01-10 Toa Nenryo Kogyo Kk Amorphous silicon semiconductor thin film and manufacture of the same
JPS6031222A (en) * 1983-07-29 1985-02-18 Toa Nenryo Kogyo Kk Amorphous silicon semiconductor thin film and manufacture of the same
JPS63314874A (en) * 1987-06-17 1988-12-22 Matsushita Electric Ind Co Ltd Solar battery power supply
JPH06282088A (en) * 1993-12-22 1994-10-07 Semiconductor Energy Lab Co Ltd Production of photosensitive body
JPH06282087A (en) * 1993-12-22 1994-10-07 Semiconductor Energy Lab Co Ltd Electronic exposure device

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