JPS5776865A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5776865A JPS5776865A JP15310680A JP15310680A JPS5776865A JP S5776865 A JPS5776865 A JP S5776865A JP 15310680 A JP15310680 A JP 15310680A JP 15310680 A JP15310680 A JP 15310680A JP S5776865 A JPS5776865 A JP S5776865A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- substrate
- film
- thermal
- generation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15310680A JPS5776865A (en) | 1980-10-31 | 1980-10-31 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15310680A JPS5776865A (en) | 1980-10-31 | 1980-10-31 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5776865A true JPS5776865A (en) | 1982-05-14 |
Family
ID=15555096
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15310680A Pending JPS5776865A (en) | 1980-10-31 | 1980-10-31 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5776865A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4983537A (en) * | 1986-12-29 | 1991-01-08 | General Electric Company | Method of making a buried oxide field isolation structure |
US5422300A (en) * | 1992-12-03 | 1995-06-06 | Motorola Inc. | Method for forming electrical isolation in an integrated circuit |
CN1050932C (zh) * | 1994-07-06 | 2000-03-29 | 现代电子产业株式会社 | 半导体器件场氧化层的形成方法 |
-
1980
- 1980-10-31 JP JP15310680A patent/JPS5776865A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4983537A (en) * | 1986-12-29 | 1991-01-08 | General Electric Company | Method of making a buried oxide field isolation structure |
US5422300A (en) * | 1992-12-03 | 1995-06-06 | Motorola Inc. | Method for forming electrical isolation in an integrated circuit |
CN1050932C (zh) * | 1994-07-06 | 2000-03-29 | 现代电子产业株式会社 | 半导体器件场氧化层的形成方法 |
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