JPS5658248A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5658248A
JPS5658248A JP13459079A JP13459079A JPS5658248A JP S5658248 A JPS5658248 A JP S5658248A JP 13459079 A JP13459079 A JP 13459079A JP 13459079 A JP13459079 A JP 13459079A JP S5658248 A JPS5658248 A JP S5658248A
Authority
JP
Japan
Prior art keywords
film
electrode
substrate
sio2
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13459079A
Other languages
Japanese (ja)
Other versions
JPS618578B2 (en
Inventor
Juro Yasui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP13459079A priority Critical patent/JPS5658248A/en
Publication of JPS5658248A publication Critical patent/JPS5658248A/en
Publication of JPS618578B2 publication Critical patent/JPS618578B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain the semiconductor device with a high performance and a high reliability as well as a high density by employing a heat oxide film and a CVD oxide film when an electrode having the first and second layers made of a polycrystaline Si is formed on a semiconductor substarate. CONSTITUTION:An SiO2 film 12 is produced on the surface of a semiconductor substrate 11 by heat treatment, the first layer of a polycrystaline Si electrode 13 is formed on a specified region thereon and then, the entire surface of the substrate including the electrode is covered with an SiO2 film 14. Then, after a polycrystal line Si film 15 is stacked on the film 14, a PSG film 16 is provided in a concave section 17 produced between electrodes 13 positioned on the film 15, and P in the film 16 is diffused into the film 15 by heat treatment. Only the film 15 in the concave section 17 is etched away depending on a higher etching speed added to containing P and the films 14 and 12 are removed to expose the substrate 11 between the electrodes 13. Subsequently, the film 15 covering the electrode 13 is converted into an SiO2 film 19 by heat treatment and a gate SiO2 film 107 is applid on the exposed surface of the substrate 11. Finally the second layer of Si gate electrode 20 is formed on the film 107.
JP13459079A 1979-10-17 1979-10-17 Production of semiconductor device Granted JPS5658248A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13459079A JPS5658248A (en) 1979-10-17 1979-10-17 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13459079A JPS5658248A (en) 1979-10-17 1979-10-17 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5658248A true JPS5658248A (en) 1981-05-21
JPS618578B2 JPS618578B2 (en) 1986-03-15

Family

ID=15131931

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13459079A Granted JPS5658248A (en) 1979-10-17 1979-10-17 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5658248A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57189481A (en) * 1981-05-18 1982-11-20 Matsushita Electric Ind Co Ltd Sheathed heater

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57189481A (en) * 1981-05-18 1982-11-20 Matsushita Electric Ind Co Ltd Sheathed heater
JPH0159711B2 (en) * 1981-05-18 1989-12-19 Matsushita Electric Ind Co Ltd

Also Published As

Publication number Publication date
JPS618578B2 (en) 1986-03-15

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