JPS5624939A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5624939A JPS5624939A JP10157879A JP10157879A JPS5624939A JP S5624939 A JPS5624939 A JP S5624939A JP 10157879 A JP10157879 A JP 10157879A JP 10157879 A JP10157879 A JP 10157879A JP S5624939 A JPS5624939 A JP S5624939A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- sio2
- sio2 film
- polycrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To avoid the disconnection of a wiring layer by forming an insulating layer interposed between multilayer wires in a composite layer with an SiO2 film obtained by oxidizing a polycrystalline Si film grown in the same method as an SiO2 film grown by a chemical vapor phase growing method. CONSTITUTION:A thick field SiO2 film 2 formed at the end of an Si substrate 1, a diffused region 6 is formed in the substrate 1 surrounded by the film 2, and a thin gate SiO2 film is coated thereon. When a wiring layer 3 made of polycrystalline Si layer is mounted on both gate and field SiO2 films 2 and a metallic wiring layer 5 is coated through an insulating layer 5 thereon, the following composite layer is used as the layer 4. That is, there is used a laminated film of a lower SiO2 film 4b formed by a chemical vapor phase growing method and an upper SiO2 film 4a obtained by oxidizing polycrystalline Si film grown in the same method as that. In this manner the influence of recess 8 caused by an under-cut portion 7 produced at the end of the layer 3 does not present on the surface, and no disconnection occurs at the wiring layer 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10157879A JPS5624939A (en) | 1979-08-06 | 1979-08-06 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10157879A JPS5624939A (en) | 1979-08-06 | 1979-08-06 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5624939A true JPS5624939A (en) | 1981-03-10 |
Family
ID=14304266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10157879A Pending JPS5624939A (en) | 1979-08-06 | 1979-08-06 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5624939A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60245253A (en) * | 1984-05-21 | 1985-12-05 | Hitachi Ltd | Semiconductor device and manufacture thereof |
| JP2002153744A (en) * | 2000-11-15 | 2002-05-28 | Taiheiyo Kiko Kk | Mixing/granulating machine |
-
1979
- 1979-08-06 JP JP10157879A patent/JPS5624939A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60245253A (en) * | 1984-05-21 | 1985-12-05 | Hitachi Ltd | Semiconductor device and manufacture thereof |
| JP2002153744A (en) * | 2000-11-15 | 2002-05-28 | Taiheiyo Kiko Kk | Mixing/granulating machine |
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