JPS5527670A - Pressure-electric signal converter - Google Patents

Pressure-electric signal converter

Info

Publication number
JPS5527670A
JPS5527670A JP10114678A JP10114678A JPS5527670A JP S5527670 A JPS5527670 A JP S5527670A JP 10114678 A JP10114678 A JP 10114678A JP 10114678 A JP10114678 A JP 10114678A JP S5527670 A JPS5527670 A JP S5527670A
Authority
JP
Japan
Prior art keywords
semiconductor
pressure
protecting film
thermal expansion
signal converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10114678A
Other languages
Japanese (ja)
Inventor
Hiroji Kawakami
Motohisa Nishihara
Yutaka Misawa
Ryosaku Kanzawa
Hideo Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10114678A priority Critical patent/JPS5527670A/en
Publication of JPS5527670A publication Critical patent/JPS5527670A/en
Pending legal-status Critical Current

Links

Landscapes

  • Pressure Sensors (AREA)

Abstract

PURPOSE: To reduce the amount of distortion given by a protecting film to a diaphragm in a pressure-electirc signal converter which uses a semiconductor monocrystal by forming the protecting film as the lamination of films with a bigger and a smaller thermal expansion coefficients than that of the semiconductor.
CONSTITUTION: A diffused resistor 40 which converts pressure to the amount of resistance change is formed on a semiconductor monocrystal 1 so that the conduction type of the resistor may become contrary to that of the semiconductor. On the surface, a protecting film of SiO25 whose thermal expansion coefficient is bigger than that of the semiconductor is formed, and again on the film, a protecting film of Si3N46 whose thermal expansion coefficient is smaller in the contrary is laminated.
COPYRIGHT: (C)1980,JPO&Japio
JP10114678A 1978-08-18 1978-08-18 Pressure-electric signal converter Pending JPS5527670A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10114678A JPS5527670A (en) 1978-08-18 1978-08-18 Pressure-electric signal converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10114678A JPS5527670A (en) 1978-08-18 1978-08-18 Pressure-electric signal converter

Publications (1)

Publication Number Publication Date
JPS5527670A true JPS5527670A (en) 1980-02-27

Family

ID=14292927

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10114678A Pending JPS5527670A (en) 1978-08-18 1978-08-18 Pressure-electric signal converter

Country Status (1)

Country Link
JP (1) JPS5527670A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59138383A (en) * 1983-01-28 1984-08-08 Fujikura Ltd Semiconductor pressure sensor
JPS60253279A (en) * 1984-05-29 1985-12-13 Toyota Central Res & Dev Lab Inc Measuring instrument for strain in semiconductor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59138383A (en) * 1983-01-28 1984-08-08 Fujikura Ltd Semiconductor pressure sensor
JPS60253279A (en) * 1984-05-29 1985-12-13 Toyota Central Res & Dev Lab Inc Measuring instrument for strain in semiconductor
JPH0337750B2 (en) * 1984-05-29 1991-06-06 Toyoda Chuo Kenkyusho Kk

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