JPS5776865A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5776865A
JPS5776865A JP15310680A JP15310680A JPS5776865A JP S5776865 A JPS5776865 A JP S5776865A JP 15310680 A JP15310680 A JP 15310680A JP 15310680 A JP15310680 A JP 15310680A JP S5776865 A JPS5776865 A JP S5776865A
Authority
JP
Japan
Prior art keywords
oxide film
substrate
film
thermal
generation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15310680A
Other languages
Japanese (ja)
Inventor
Toshihiko Fukuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15310680A priority Critical patent/JPS5776865A/en
Publication of JPS5776865A publication Critical patent/JPS5776865A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE:To prevent the generation of a crystal defect by successively laminating a thermal oxide film, a CVD oxide film and a Si nitride film on the surface of a Si substrate and oxidizing the surface of the Si substrate of a section where there is no thermal oxide film. CONSTITUTION:The thermal oxide film 2, the CVD oxide film 6 and the Si3N4 film 3 are laminated successively on the Si substrate 1, and patterned, and a separation oxide film 4 is formed by thermally oxidizing an exposed surface of the Si substrate. Accordingly, thermal stress resulting from the Si3N4 layer when the films are selectively oxidized can be relaxed effectively, and the generation of the crystal defect can be prevented.
JP15310680A 1980-10-31 1980-10-31 Manufacture of semiconductor device Pending JPS5776865A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15310680A JPS5776865A (en) 1980-10-31 1980-10-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15310680A JPS5776865A (en) 1980-10-31 1980-10-31 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5776865A true JPS5776865A (en) 1982-05-14

Family

ID=15555096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15310680A Pending JPS5776865A (en) 1980-10-31 1980-10-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5776865A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4983537A (en) * 1986-12-29 1991-01-08 General Electric Company Method of making a buried oxide field isolation structure
US5422300A (en) * 1992-12-03 1995-06-06 Motorola Inc. Method for forming electrical isolation in an integrated circuit
CN1050932C (en) * 1994-07-06 2000-03-29 现代电子产业株式会社 Method of forming a dield oxide film in a semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4983537A (en) * 1986-12-29 1991-01-08 General Electric Company Method of making a buried oxide field isolation structure
US5422300A (en) * 1992-12-03 1995-06-06 Motorola Inc. Method for forming electrical isolation in an integrated circuit
CN1050932C (en) * 1994-07-06 2000-03-29 现代电子产业株式会社 Method of forming a dield oxide film in a semiconductor device

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