JPS5717175A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5717175A
JPS5717175A JP9123180A JP9123180A JPS5717175A JP S5717175 A JPS5717175 A JP S5717175A JP 9123180 A JP9123180 A JP 9123180A JP 9123180 A JP9123180 A JP 9123180A JP S5717175 A JPS5717175 A JP S5717175A
Authority
JP
Japan
Prior art keywords
transistor
oxide film
gate oxide
voltage
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9123180A
Other languages
Japanese (ja)
Inventor
Kunihiko Wada
Motoo Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9123180A priority Critical patent/JPS5717175A/en
Publication of JPS5717175A publication Critical patent/JPS5717175A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To increase breakdown voltage by selectively making the thickness of a gate oxide film thicker than that of a gate oxide film of another transistor. CONSTITUTION:In the first transistor Q1, drain voltage thereof is used near line voltage, and the second transistor Q2, drain voltage thereof is employed at voltage higher than line voltage, the thickness of the gate oxide film 31 of the second transistor Q2 is made thicker than that 24' of the gate oxide film of the first transistor Q1. The transistor is used as a transistor having high reliability, particularly, a transistor, drain voltage thereof is higher than line voltage, only by thickening the gate oxide film, and the effective transistor is realized.
JP9123180A 1980-07-05 1980-07-05 Semiconductor integrated circuit Pending JPS5717175A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9123180A JPS5717175A (en) 1980-07-05 1980-07-05 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9123180A JPS5717175A (en) 1980-07-05 1980-07-05 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5717175A true JPS5717175A (en) 1982-01-28

Family

ID=14020641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9123180A Pending JPS5717175A (en) 1980-07-05 1980-07-05 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5717175A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100345430B1 (en) * 1998-10-15 2002-07-26 인터내셔널 비지네스 머신즈 코포레이션 Structure and method for dual gate oxidation for cmos technology

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5448179A (en) * 1977-09-26 1979-04-16 Hitachi Ltd Mis-type semiconductor integrated circuit device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5448179A (en) * 1977-09-26 1979-04-16 Hitachi Ltd Mis-type semiconductor integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100345430B1 (en) * 1998-10-15 2002-07-26 인터내셔널 비지네스 머신즈 코포레이션 Structure and method for dual gate oxidation for cmos technology

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