JPS5780775A - Semiconductor protective circuit device - Google Patents

Semiconductor protective circuit device

Info

Publication number
JPS5780775A
JPS5780775A JP55155951A JP15595180A JPS5780775A JP S5780775 A JPS5780775 A JP S5780775A JP 55155951 A JP55155951 A JP 55155951A JP 15595180 A JP15595180 A JP 15595180A JP S5780775 A JPS5780775 A JP S5780775A
Authority
JP
Japan
Prior art keywords
junction
overvoltage
layer
type
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55155951A
Other languages
Japanese (ja)
Inventor
Shinichiro Mitani
Osamu Tsuchiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55155951A priority Critical patent/JPS5780775A/en
Publication of JPS5780775A publication Critical patent/JPS5780775A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To obtain an input protecting circuit capable of responding to high speed with small occupying area by forming a P<+>-N<+> junction along the semiconductor surface under an insulating film and using the junction as the leakage pass region of the overvoltage. CONSTITUTION:An N<+> type source, drain 2, gate insulating film 3 and gate electrode 4 are formed on a P<-> type substrate 1, an N<+> type layer 5 and a P<+> type layer 6 are formed under the electrode 4, and a P<+>-N<+> junction J is formed between the layers 5 and 6. In such an input protecting circuit, the layer 5 of the channel unit operates as the resistor R for the voltage drop, and the P<+>-N<+> junction is operated as the leakage pass region of the overvoltage designated by an arrow A. Since the layer 6 is not effected by the influence of the source and drain, it can effectively operates as a clamp of the overvoltage.
JP55155951A 1980-11-07 1980-11-07 Semiconductor protective circuit device Pending JPS5780775A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55155951A JPS5780775A (en) 1980-11-07 1980-11-07 Semiconductor protective circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55155951A JPS5780775A (en) 1980-11-07 1980-11-07 Semiconductor protective circuit device

Publications (1)

Publication Number Publication Date
JPS5780775A true JPS5780775A (en) 1982-05-20

Family

ID=15617089

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55155951A Pending JPS5780775A (en) 1980-11-07 1980-11-07 Semiconductor protective circuit device

Country Status (1)

Country Link
JP (1) JPS5780775A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8525239B2 (en) 2010-05-27 2013-09-03 Panasonic Corporation Semiconductor device and method for driving same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8525239B2 (en) 2010-05-27 2013-09-03 Panasonic Corporation Semiconductor device and method for driving same

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