JPS55166953A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS55166953A
JPS55166953A JP7584979A JP7584979A JPS55166953A JP S55166953 A JPS55166953 A JP S55166953A JP 7584979 A JP7584979 A JP 7584979A JP 7584979 A JP7584979 A JP 7584979A JP S55166953 A JPS55166953 A JP S55166953A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
type transistor
surge
mos type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7584979A
Other languages
Japanese (ja)
Inventor
Chukichi Adachi
Yukimasa Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7584979A priority Critical patent/JPS55166953A/en
Publication of JPS55166953A publication Critical patent/JPS55166953A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)

Abstract

PURPOSE:To reduce the P-N junction area in a semiconductor integrated circuit device by conducting an MOS type transistor with respect to positive or negative high voltage surge. CONSTITUTION:The gate electrode 8a of an MOS type transistor provided on a semiconductor integrated circuit substrate is connected through a high resistor 9 to a source electrode 8c, and the drain electrode 8b is connected to an input terminal 1 or output terminal. When high voltage surge or electrostatic surge is applied externally from the input terminal (or output terminal), the gate potential of the MOS type transistor is raised to conduct it so as to absorb the surge via the channel current.
JP7584979A 1979-06-13 1979-06-13 Semiconductor integrated circuit device Pending JPS55166953A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7584979A JPS55166953A (en) 1979-06-13 1979-06-13 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7584979A JPS55166953A (en) 1979-06-13 1979-06-13 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS55166953A true JPS55166953A (en) 1980-12-26

Family

ID=13588067

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7584979A Pending JPS55166953A (en) 1979-06-13 1979-06-13 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS55166953A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4786956A (en) * 1982-10-20 1988-11-22 North American Philips Corporation, Signetics Division Input protection device for integrated circuits
JPH0241621A (en) * 1988-07-29 1990-02-09 Matsushita Electron Corp Semiconductor integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4786956A (en) * 1982-10-20 1988-11-22 North American Philips Corporation, Signetics Division Input protection device for integrated circuits
JPH0241621A (en) * 1988-07-29 1990-02-09 Matsushita Electron Corp Semiconductor integrated circuit

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