JPS5747711A - Chemical plasma growing method in vapor phase - Google Patents
Chemical plasma growing method in vapor phaseInfo
- Publication number
- JPS5747711A JPS5747711A JP55108164A JP10816480A JPS5747711A JP S5747711 A JPS5747711 A JP S5747711A JP 55108164 A JP55108164 A JP 55108164A JP 10816480 A JP10816480 A JP 10816480A JP S5747711 A JPS5747711 A JP S5747711A
- Authority
- JP
- Japan
- Prior art keywords
- sih
- substrate
- vapor phase
- growing
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012808 vapor phase Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 239000000126 substance Substances 0.000 title abstract 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 238000010438 heat treatment Methods 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 239000005368 silicate glass Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31625—Deposition of boron or phosphorus doped silicon oxide, e.g. BSG, PSG, BPSG
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55108164A JPS5747711A (en) | 1980-08-08 | 1980-08-08 | Chemical plasma growing method in vapor phase |
EP81303589A EP0046059B1 (en) | 1980-08-08 | 1981-08-05 | Method of plasma enhanced chemical vapour deposition of films |
DE8181303589T DE3172827D1 (en) | 1980-08-08 | 1981-08-05 | Method of plasma enhanced chemical vapour deposition of films |
US06/290,978 US4394401A (en) | 1980-08-08 | 1981-08-07 | Method of plasma enhanced chemical vapor deposition of phosphosilicate glass film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55108164A JPS5747711A (en) | 1980-08-08 | 1980-08-08 | Chemical plasma growing method in vapor phase |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5747711A true JPS5747711A (en) | 1982-03-18 |
JPS625230B2 JPS625230B2 (ja) | 1987-02-03 |
Family
ID=14477587
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55108164A Granted JPS5747711A (en) | 1980-08-08 | 1980-08-08 | Chemical plasma growing method in vapor phase |
Country Status (4)
Country | Link |
---|---|
US (1) | US4394401A (ja) |
EP (1) | EP0046059B1 (ja) |
JP (1) | JPS5747711A (ja) |
DE (1) | DE3172827D1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61291976A (ja) * | 1985-04-25 | 1986-12-22 | 新日本製鐵株式会社 | プラズマ利用化学蒸着法によりSiO↓2↓−↓xを被覆したステンレス鋼製物品と該物品の製造方法 |
JPS6260871A (ja) * | 1985-09-11 | 1987-03-17 | Anelva Corp | 真空化学反応装置 |
JPS6362879A (ja) * | 1986-09-02 | 1988-03-19 | Anelva Corp | 真空化学反応装置 |
JPH0339475A (ja) * | 1989-07-05 | 1991-02-20 | Hitachi Electron Eng Co Ltd | プラズマcvd装置における生成酸化膜の強化方法 |
JP2007066997A (ja) * | 2005-08-29 | 2007-03-15 | Kyocera Corp | 薄膜コンデンサとその製造方法、配線基板 |
JP2014045094A (ja) * | 2012-08-27 | 2014-03-13 | Sharp Corp | 高透過率保護膜作製方法および半導体発光素子の製造方法 |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1208162A (en) * | 1982-10-14 | 1986-07-22 | Dilip K. Nath | Plasma processed sinterable ceramics |
JPH0614552B2 (ja) * | 1983-02-02 | 1994-02-23 | 富士ゼロックス株式会社 | 光電変換素子の製造方法 |
US4557950A (en) * | 1984-05-18 | 1985-12-10 | Thermco Systems, Inc. | Process for deposition of borophosphosilicate glass |
US4620986A (en) * | 1984-11-09 | 1986-11-04 | Intel Corporation | MOS rear end processing |
GB2169003B (en) * | 1984-11-16 | 1987-12-31 | Sony Corp | Chemical vapour deposition |
US4612207A (en) * | 1985-01-14 | 1986-09-16 | Xerox Corporation | Apparatus and process for the fabrication of large area thin film multilayers |
EP0210578B1 (en) * | 1985-07-29 | 1992-05-20 | Energy Conversion Devices, Inc. | System and method for depositing an electrical insulator in a continuous process |
EP0245290A1 (en) * | 1985-11-04 | 1987-11-19 | Motorola, Inc. | Glass intermetal dielectric |
US5354695A (en) | 1992-04-08 | 1994-10-11 | Leedy Glenn J | Membrane dielectric isolation IC fabrication |
JPH0828427B2 (ja) * | 1988-09-14 | 1996-03-21 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
CA2006174A1 (en) * | 1989-12-20 | 1991-06-20 | Luc Ouellet | Method of making crack-free insulating films with sog interlayer |
JPH0395922U (ja) * | 1990-01-22 | 1991-09-30 | ||
US6714625B1 (en) | 1992-04-08 | 2004-03-30 | Elm Technology Corporation | Lithography device for semiconductor circuit pattern generation |
US5420437A (en) * | 1994-01-11 | 1995-05-30 | Siess; Harold E. | Method and apparatus for generation and implantation of ions |
US6127261A (en) * | 1995-11-16 | 2000-10-03 | Advanced Micro Devices, Inc. | Method of fabricating an integrated circuit including a tri-layer pre-metal interlayer dielectric compatible with advanced CMOS technologies |
KR100267418B1 (ko) * | 1995-12-28 | 2000-10-16 | 엔도 마코토 | 플라스마처리방법및플라스마처리장치 |
US6345589B1 (en) | 1996-03-29 | 2002-02-12 | Applied Materials, Inc. | Method and apparatus for forming a borophosphosilicate film |
US6013584A (en) * | 1997-02-19 | 2000-01-11 | Applied Materials, Inc. | Methods and apparatus for forming HDP-CVD PSG film used for advanced pre-metal dielectric layer applications |
US5915167A (en) | 1997-04-04 | 1999-06-22 | Elm Technology Corporation | Three dimensional structure memory |
US6551857B2 (en) | 1997-04-04 | 2003-04-22 | Elm Technology Corporation | Three dimensional structure integrated circuits |
US6627305B1 (en) * | 1997-07-16 | 2003-09-30 | Koninklijke Philips Electronics N.V. | Substrates for large area electronic devices |
US6073576A (en) | 1997-11-25 | 2000-06-13 | Cvc Products, Inc. | Substrate edge seal and clamp for low-pressure processing equipment |
JP3818561B2 (ja) * | 1998-10-29 | 2006-09-06 | エルジー フィリップス エルシーディー カンパニー リミテッド | シリコン酸化膜の成膜方法および薄膜トランジスタの製造方法 |
US6323141B1 (en) * | 2000-04-03 | 2001-11-27 | Taiwan Semiconductor Manufacturing Company | Method for forming anti-reflective coating layer with enhanced film thickness uniformity |
US6748994B2 (en) * | 2001-04-11 | 2004-06-15 | Avery Dennison Corporation | Label applicator, method and label therefor |
US20020182342A1 (en) * | 2001-04-13 | 2002-12-05 | Luc Ouellet | Optical quality silica films |
US6887514B2 (en) * | 2001-05-31 | 2005-05-03 | Dalsa Semiconductor Inc. | Method of depositing optical films |
US7208426B2 (en) * | 2001-11-13 | 2007-04-24 | Chartered Semiconductors Manufacturing Limited | Preventing plasma induced damage resulting from high density plasma deposition |
AU2003255254A1 (en) | 2002-08-08 | 2004-02-25 | Glenn J. Leedy | Vertical system integration |
JP2004172389A (ja) * | 2002-11-20 | 2004-06-17 | Renesas Technology Corp | 半導体装置およびその製造方法 |
US7223706B2 (en) * | 2004-06-30 | 2007-05-29 | Intersil Americas, Inc. | Method for forming plasma enhanced deposited, fully oxidized PSG film |
US7704897B2 (en) * | 2008-02-22 | 2010-04-27 | Applied Materials, Inc. | HDP-CVD SiON films for gap-fill |
CN102584019B (zh) * | 2012-01-31 | 2014-07-02 | 绥中滨海经济区红杉科技有限公司 | 化学汽相沉积法镀制玻璃减反射膜的设备及方法 |
FR3045033B1 (fr) * | 2015-12-09 | 2020-12-11 | Saint Gobain | Procede et installation pour l'obtention d'un vitrage colore |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4223048A (en) * | 1978-08-07 | 1980-09-16 | Pacific Western Systems | Plasma enhanced chemical vapor processing of semiconductive wafers |
US4289797A (en) * | 1979-10-11 | 1981-09-15 | Western Electric Co., Incorporated | Method of depositing uniform films of Six Ny or Six Oy in a plasma reactor |
-
1980
- 1980-08-08 JP JP55108164A patent/JPS5747711A/ja active Granted
-
1981
- 1981-08-05 DE DE8181303589T patent/DE3172827D1/de not_active Expired
- 1981-08-05 EP EP81303589A patent/EP0046059B1/en not_active Expired
- 1981-08-07 US US06/290,978 patent/US4394401A/en not_active Expired - Lifetime
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61291976A (ja) * | 1985-04-25 | 1986-12-22 | 新日本製鐵株式会社 | プラズマ利用化学蒸着法によりSiO↓2↓−↓xを被覆したステンレス鋼製物品と該物品の製造方法 |
JPH0470393B2 (ja) * | 1985-04-25 | 1992-11-10 | Nippon Steel Corp | |
JPS6260871A (ja) * | 1985-09-11 | 1987-03-17 | Anelva Corp | 真空化学反応装置 |
JPS6362879A (ja) * | 1986-09-02 | 1988-03-19 | Anelva Corp | 真空化学反応装置 |
JPH0339475A (ja) * | 1989-07-05 | 1991-02-20 | Hitachi Electron Eng Co Ltd | プラズマcvd装置における生成酸化膜の強化方法 |
JP2007066997A (ja) * | 2005-08-29 | 2007-03-15 | Kyocera Corp | 薄膜コンデンサとその製造方法、配線基板 |
JP4711781B2 (ja) * | 2005-08-29 | 2011-06-29 | 京セラ株式会社 | 薄膜コンデンサの製造方法 |
JP2014045094A (ja) * | 2012-08-27 | 2014-03-13 | Sharp Corp | 高透過率保護膜作製方法および半導体発光素子の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP0046059A3 (en) | 1983-01-05 |
EP0046059B1 (en) | 1985-11-06 |
US4394401A (en) | 1983-07-19 |
EP0046059A2 (en) | 1982-02-17 |
DE3172827D1 (en) | 1985-12-12 |
JPS625230B2 (ja) | 1987-02-03 |
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