KR930005115A - 저온,고압 상태에서의 실리콘 증착방법 - Google Patents
저온,고압 상태에서의 실리콘 증착방법 Download PDFInfo
- Publication number
- KR930005115A KR930005115A KR1019920014177A KR920014177A KR930005115A KR 930005115 A KR930005115 A KR 930005115A KR 1019920014177 A KR1019920014177 A KR 1019920014177A KR 920014177 A KR920014177 A KR 920014177A KR 930005115 A KR930005115 A KR 930005115A
- Authority
- KR
- South Korea
- Prior art keywords
- temperature
- silicon
- gas
- controlled
- produce
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 고압으로 실리콘이 웨이퍼 위에 증착되는, 본 발명에 따른 단일 웨이퍼 반응기를 나타낸 도면.
Claims (7)
- 도핑된 또는 도핑되지 않은 실리콘을 기판위에 증착시키는 방법으로서, a)온도제어 수단이 설비된 진공 챔버내로 기판을 제공하는 단계와, b)상기 기판의 온도를 약600℃내지 750℃사이에서 제어하는 단계와; 그리고 c)바람직한 두께의 실리콘 층이 얻어질때까지 약 13.2×10-3atm(10 Torr) 내지 462×10-3atm(350 Torr)사이의 압력을 제공하기 위하여 실리콘 전구물질 기체를 추가하는 단계를 포함하는 방법.
- 제1항에 있어서, 압력이 약 33×10-3atm(10Torr) 내지 250.8×10-3atm (190Torr) 사이에서 유지되는 방법.
- 제1항에 있어서, 기체 및 온도가 비 결정질 실리콘을 생산하도록 제어되는 방법.
- 제1항에 있어서, 기체 및 온도가 비 결정 및 다결정 실리콘의 혼합물을 생성하도록 제어되는 방법.
- 제1항에 있어서, 기체 및 온도가 다 결정 실리콘을 생산하도록 제어되는 방법.
- 제1항에 있어서, 기체 및 온도가 인으로 도핑된 실리콘을 생산하도록 제어되는 방법.
- 제6항에 있어서, 기체 및 온도가 인으로 도핑된 다 결정 실리콘을 생산하도록 제어되는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US74295491A | 1991-08-09 | 1991-08-09 | |
US7/742,954 | 1991-08-09 | ||
US07/742,954 | 1991-08-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR930005115A true KR930005115A (ko) | 1993-03-23 |
KR100272891B1 KR100272891B1 (ko) | 2000-12-01 |
Family
ID=24986911
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920014177A KR100272891B1 (ko) | 1991-08-09 | 1992-08-07 | 저온, 고압 상태에서의 실리콘 증착방법 |
Country Status (3)
Country | Link |
---|---|
US (3) | US5607724A (ko) |
JP (2) | JP3121131B2 (ko) |
KR (1) | KR100272891B1 (ko) |
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JP2002520487A (ja) * | 1998-07-09 | 2002-07-09 | アプライド マテリアルズ インコーポレイテッド | アモルファスシリコン及び多結晶シリコンとゲルマニウムのアロイ膜の形成方法及び装置 |
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-
1992
- 1992-08-03 JP JP04206715A patent/JP3121131B2/ja not_active Ceased
- 1992-08-07 KR KR1019920014177A patent/KR100272891B1/ko not_active IP Right Cessation
-
1995
- 1995-04-28 US US08/430,582 patent/US5607724A/en not_active Expired - Lifetime
-
1996
- 1996-06-19 US US08/668,025 patent/US5700520A/en not_active Expired - Fee Related
-
1997
- 1997-10-08 US US08/946,845 patent/US5876797A/en not_active Expired - Fee Related
-
2000
- 2000-06-19 JP JP2000182440A patent/JP2001028344A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US5607724A (en) | 1997-03-04 |
JPH05206034A (ja) | 1993-08-13 |
US5876797A (en) | 1999-03-02 |
KR100272891B1 (ko) | 2000-12-01 |
JP2001028344A (ja) | 2001-01-30 |
US5700520A (en) | 1997-12-23 |
JP3121131B2 (ja) | 2000-12-25 |
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