JPS5742523A - Preparation of amorphous silicon film - Google Patents

Preparation of amorphous silicon film

Info

Publication number
JPS5742523A
JPS5742523A JP55117479A JP11747980A JPS5742523A JP S5742523 A JPS5742523 A JP S5742523A JP 55117479 A JP55117479 A JP 55117479A JP 11747980 A JP11747980 A JP 11747980A JP S5742523 A JPS5742523 A JP S5742523A
Authority
JP
Japan
Prior art keywords
amorphous silicon
silicon film
gas
monosilane gas
direct electrical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55117479A
Other languages
Japanese (ja)
Other versions
JPS6332863B2 (en
Inventor
Akio Azuma
Kazuhiro Kawajiri
Yuzo Mizobuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP55117479A priority Critical patent/JPS5742523A/en
Publication of JPS5742523A publication Critical patent/JPS5742523A/en
Publication of JPS6332863B2 publication Critical patent/JPS6332863B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To prepare the titled film having excellent photo-conductitity, at high speed, by introducing a monosilane gas into a vacuum chamber, and applying direct electrical field keeping partial pressure of gas, flow of gas, direct electrical power density, and the substrate temperature, at specific levels, thereby generating electrical discharge. CONSTITUTION:An amorphous silicon film is prepared by the direct glow discharge decomposition of monosilane gas which comprises the introduction of the monosilane gas into the vacuum chamber and application of direct electrical field to cause the electrical discharge. In the above process, the amorphous silicon film can be deposited at a rate of >=20Angstrom /sec, by keeping the monosilane gas partial pressure at 0.2-1.0 Torr, the flow of the monosilane gas at 0.01-2.0cc/min per 1cm<3> of the space between the electrodes, the direct electrical power density imposed to the cathode mounted with the substrate at 0.1-1.0W/cm<2>, and the substrate temperature at 250-450 deg.C. The process increases the rate of deposition, suppresses the increase of defects accompanied to the high-speed deposition, and gives an amorphous silicon film having excellent photoconductivity at a reduced production cost.
JP55117479A 1980-08-26 1980-08-26 Preparation of amorphous silicon film Granted JPS5742523A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55117479A JPS5742523A (en) 1980-08-26 1980-08-26 Preparation of amorphous silicon film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55117479A JPS5742523A (en) 1980-08-26 1980-08-26 Preparation of amorphous silicon film

Publications (2)

Publication Number Publication Date
JPS5742523A true JPS5742523A (en) 1982-03-10
JPS6332863B2 JPS6332863B2 (en) 1988-07-01

Family

ID=14712711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55117479A Granted JPS5742523A (en) 1980-08-26 1980-08-26 Preparation of amorphous silicon film

Country Status (1)

Country Link
JP (1) JPS5742523A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59127647A (en) * 1983-01-11 1984-07-23 Mitsui Toatsu Chem Inc Preparation of amorphous membrane
JPS59179151A (en) * 1983-03-30 1984-10-11 Mitsui Toatsu Chem Inc Production of amorphous thin film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59127647A (en) * 1983-01-11 1984-07-23 Mitsui Toatsu Chem Inc Preparation of amorphous membrane
JPS59179151A (en) * 1983-03-30 1984-10-11 Mitsui Toatsu Chem Inc Production of amorphous thin film

Also Published As

Publication number Publication date
JPS6332863B2 (en) 1988-07-01

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